Infineon-Technologies-IRGS4B60KD1TRRP
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PD – 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
V
CES
= 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
I
C
= 7.6A, T
C
=100°C
t
sc
> 10µs, T
J
=150°C
V
CE(on)
typ. = 2.1V
• 10µs Short Circuit Capability.
G
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
E
• Maximum Junction Temperature rated at 175°C.
• Lead-Free
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D
2
Pak
IRGS4B60KD1 IRGSL4B60KD1
TO-262
TO-220
IRGB4B60KD1
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
600
V
V
CES
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
11
I
C
@ T
C
= 25°C
7.6
A
I
C
@ T
C
= 100°C
22
I
CM
22
I
LM
11
I
F
@ T
C
= 25°C
6.7
I
F
@ T
C
= 100°C
22
±20
I
FM
V
V
GE
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
63
W
P
D
@ T
C
= 25°C
31
P
D
@ T
C
= 100°C
-55 to +175
T
J
Storage Temperature Range
Storage Temperature Range, for 10 sec.
°C
T
STG
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.4
Units
°C/W
Junction-to-Case- IGBT
R
θ
JC
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient
–––
6.1
R
θ
JC
0.50
–––
–––
62
R
θ
CS
R
θ
JA
–––
40
Junction-to-Ambient (PCB Mount, steady state)
Weight
R
θ
JA
1.44
–––
g
Wt
1
8/30/04
IRGB/S/SL4B60KD1PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
Ref.Fig.
V
(BR)CES
V
GE
= 0V, I
C
= 500µA
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
—
—
0.28
2.1
2.5
2.6
4.5
-8.1
1.7
1.0
136
—
V
∆
∆
V
(BR)CES
/ T
J
V
CE(on)
V
GE(th)
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 4.0A, V
GE
= 15V, T
J
= 25°C
I
C
= 4.0A, V
GE
= 15V, T
J
= 150°C
I
C
= 4.0A, V
GE
= 15V, T
J
= 175°C
Temperature Coeff. of Breakdown Voltage
—
V/°C
2.5
2.8
2.9
5.5
—
5,6,7
Collector-to-Emitter Voltage
V
9,10,11
V
V
CE
= V
GE
, I
C
= 250µA
Gate Threshold Voltage
V
mV/°C
S
9,10,11
12
∆
∆
V
GE(th)
/ T
J
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
V
CE
= 50V, I
C
= 4.0A, PW = 80µs
gfe
—
V
V
V
GE
= 0V, V
CE
= 600V
150
600
I
CES
V
FM
GE
= 0V, V
CE
= 600V, T
J
= 150°C
GE
= 0V, V
CE
= 600V, T
J
= 175°C
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
µA
V
722 2400
I
F
= 4.0A
1.4
1.3
1.2
—
2.0
1.8
1.7
8
I
F
= 4.0A, T
J
= 150°C
I
F
= 4.0A, T
J
= 175°C
I
GES
V
GE
= ±20V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Ref.Fig.
23
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max.
Units
Conditions
Q
g
I
C
= 4.0A
CC
= 400V
V
GE
= 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
12
1.7
6.5
73
—
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
V
—
nC
µJ
ns
CT1
—
I
C
= 4.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
T
J
= 25°C
80
CT4
CT4
47
53
120
22
130
28
I
C
= 4.0A, V
CC
= 400V
Ω
GE
= 15V, R
G
= 100
, L = 2.5mH
V
Rise time
18
23
t
d(off)
t
f
T
J
= 25°C
Turn-Off delay time
100
66
110
80
Fall time
E
on
E
off
E
tot
t
d(on)
t
r
I
C
= 4.0A, V
CC
= 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
130
83
150
140
280
27
CT4
13,15
WF1,WF2
14,16
CT4
Ω
V
GE
= 15V, R
G
= 100
, L = 2.5mH
µJ
ns
T
J
= 150°C
220
22
I
C
= 4.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
T
J
= 150°C
Rise time
18
22
t
d(off)
t
f
Turn-Off delay time
120
79
130
89
WF1
Fall time
WF2
C
ies
C
oes
C
res
RBSOA
V
GE
= 0V
Input Capacitance
190
25
—
V
CC
= 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
pF
µs
22
6.2
—
f = 1.0MHz
T
J
= 150°C, I
C
= 22A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 100
T
J
= 150°C, Vp = 600V, R
G
= 100
Ω
V
CC
=360V,V
GE
= +15V to 0V
T
J
= 150°C
FULL SQUARE
4
Ω
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
CT3
WF4
E
rec
t
rr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
81
93
100
—
µJ
ns
A
17,18,19
20,21
CT4,WF3
V
CC
= 400V, I
F
= 4.0A, L = 2.5mH
V
GE
= 15V, R
G
= 100
Ω
I
rr
Peak Reverse Recovery Current
6.3
7.9
Note
to
are on page 16
2
IRGB/S/SL4B60KD1PbF
70
60
50
40
30
20
10
0
12
10
8
6
4
2
0
0
20 40 60 80
100 120 140 160 180
(°C)
0
20 40 60 80
100 120 140 160 180
(°C)
T
T
C
C
Fig. 1
– Maximum DC Collector Current vs.
Fig. 2
– Power
Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10
100µs
1
1ms
10ms
0.1
DC
0
0.01
10
100
(V)
1000
0
1
10
100
(V)
1000 10000
V
CE
V
CE
Fig. 4
– Reverse Bias SOA
Fig. 3
– Forward SOA
T
C
= 25°C; T
J
≤
150°C
T
J
= 150°C; V
GE
=15V
3
IRGB/S/SL4B60KD1PbF
30
30
25
20
15
10
5
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
20
15
10
5
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
(V)
V
(V)
CE
CE
Fig. 5
– Typ. IGBT Output Characteristics
Fig. 6
– Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
T
J
= 25°C; tp = 80µs
25
35
30
25
20
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
15
10
5
-40°C
25°C
150°C
15
10
5
0
0
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
V
F
V
(V)
CE
Fig. 8
– Typ. Diode Forward Characteristics
Fig. 7
– Typ. IGBT Output Characteristics
tp = 80µs
T
J
= 150°C; tp = 80µs
4
IRGB/S/SL4B60KD1PbF
20
18
16
14
12
10
8
20
18
16
14
12
I
I
I
= 2.0A
= 4.0A
= 8.0A
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
CE
CE
CE
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9
– Typical V
CE
vs. V
GE
Fig. 10
– Typical V
CE
vs. V
GE
T
J
= -40°C
T
J
= 25°C
20
18
16
14
12
10
8
30
25
20
15
10
5
T
= 25°C
J
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
T
= 150°C
J
6
4
2
0
0
0
5
10
15
20
5
10
15
20
V
, Gate-to-Source Voltage (V)
V
(V)
GS
GE
Fig. 11
– Typical V
CE
vs. V
GE
Fig. 12
– Typ. Transfer Characteristics
T
J
= 150°C
V
CE
= 360V; tp = 10µs
5
IRGB/S/SL4B60KD1PbF
350
300
1000
100
10
td
t
E
OFF
ON
250
F
200
150
td
ON
E
t
OFF
R
100
50
0
1
0
2
4
6
8
10
1
2
3
4
5
I
6
7
8
9
10
I
(A)
(A)
C
C
Fig. 13
– Typ. Energy Loss vs. I
C
T
J
= 150°C; L=2.5mH; V
CE
= 400V,
R
G
= 100
Ω
; V
GE
= 15V
Fig. 14
– Typ. Switching Time vs. I
C
T
J
= 150°C; L=2.5mH; V
CE
= 400V
R
G
= 100
Ω
; V
GE
= 15V
350
300
250
200
150
100
50
1000
E
ON
td
OFF
100
t
F
E
OFF
td
ON
t
R
0
10
0
100
200
300
)
400
500
0
100
200
300
)
400
500
R
(
Ω
R
(
Ω
G
G
Fig. 15
– Typ. Energy Loss vs. R
G
T
J
= 150°C; L=2.5mH; V
CE
= 400V
I
CE
= 4.0A; V
GE
= 15V
Fig. 16
– Typ. Switching Time vs. R
G
T
J
= 150°C; L=2.5mH; V
CE
= 400V
I
CE
= 4.0A; V
GE
= 15V
6
IRGB/S/SL4B60KD1PbF
7
6
5
4
3
2
10
9
8
7
6
5
4
3
2
1
R
100Ω
G =
R
R
200
Ω
G =
330
Ω
G =
R
470
Ω
G =
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
9
10
R
(
Ω)
I
(A)
G
F
Fig. 17
– Typical Diode I
RR
vs. I
F
Fig. 18
– Typical Diode I
RR
vs. R
G
T
J
= 150°C
T
J
= 150°C; I
F
= 4.0A
700
7
6
5
4
3
2
100Ω
8.0A
600
500
400
300
200
100
200Ω
330Ω
470
Ω
4.0A
2.0A
0
50 100
150 200 250 300 350 400
100
150
200
250
300
di /dt
(A/µs)
F
di /dt
(A/µs)
F
Fig. 19
– Typical Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V;
Fig. 20
– Typical Diode Q
RR
V
CC
= 400V; V
GE
= 15V;T
J
= 150°C
I
F
= 4.0A; T
J
= 150°C
7
IRGB/S/SL4B60KD1PbF
150
125
100
75
100Ω
200Ω
330Ω
470
Ω
50
25
0
0
1
2
3
4
5
6
7
8
9
10
I
(A)
F
Fig. 21
– Typical Diode E
RR
vs. I
F
T
J
= 150°C
1000
100
10
16
14
12
10
8
Cies
300V
400V
Coes
Cres
6
4
2
1
0
0
20
40
60
(V)
80
100
0
2
4
6
8
10
12
14
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 23
– Typical Gate Charge vs. V
GE
Fig. 22
– Typ. Capacitance vs. V
CE
I
CE
= 4.0A; L = 3150µH
V
GE
= 0V; f = 1MHz
8
IRGB/S/SL4B60KD1PbF
10
1
D = 0.50
0.20
0.10
0.05
R
1
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
τ
i (sec)
τ
J
τ
J
τ
τ
0.0429
1.3417
1.0154
0.000001
0.000178
0.000627
C
τ
τ
1
τ
1
τ
0.1
2
τ
2
3
τ
3
0.02
0.01
Ci=
τ
i
/
Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 24.
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
0.10
1
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
τ
0.0904
1.6662
3.5994
0.7454
0.000003
0.000117
0.001610
0.048846
τ
J
τ
J
τ
0.05
C
τ
τ
1
τ
1
τ
τ
2
τ
2
3
τ
3
4
τ
4
0.02
0.01
Ci=
τ
i
/
Ri
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25.
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
9
IRGB/S/SL4B60KD1PbF
L
L
VCC
80 V
+
–
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2
– RBSOA Circuit
Fig.C.T.1
– Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
– 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3
– S.C.SOA Circuit
Fig.C.T.4
– Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5
– Resistive Load Circuit
10
IRGB/S/SL4B60KD1PbF
700
600
500
400
300
200
100
0
14
12
10
8
700
600
500
400
300
200
100
0
14
12
10
8
tf
tr
Vce
I
c
e
Vce
90% Ice
5% Vce
5% I
c
e
90% Ice
10% Ice
5% Vce
6
6
4
4
I
c
e
2
2
0
0
E
o
n
Loss
E
o
ff Loss
-100
-2
-100
-2
0.4
0.6
0.8
1
1.2
0.35
0.45
0.55
0.65
Time (uS)
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ T
J
= 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ T
J
= 150°C using Fig. CT.4
100
0
6
400
350
300
250
200
150
100
50
40
35
30
25
20
15
10
5
Q
R
R
Vce
t
R
R
4
-100
-200
-300
-400
-500
-600
2
Ice
0
-2
-4
-6
-8
10%
P
e
ak
I
R
R
P
e
ak
I
R
R
0
0
-50
-5
30
40
50
60
70
0.05
0.15
Time (uS)
0.25
0.35
Time (uS)
Fig. WF4- Typ. S.C Waveform
@ T
C
= 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ T
J
= 150°C using Fig. CT.4
11
IRGB/S/SL4B60KD1PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
– B –
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
– A –
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EX
A
M
P
LE: T
HIS IS
A
N
I
RF1010
L
O
T CODE 1789
P
A
R
T NUMBER
AS S
E
M
B
L
ED
O
N WW 19, 1997
IN
T
HE
A
S
S
E
M
B
LY L
I
NE
“C”
IN
T
E RN
A
T IONAL
RE
C
T
I
FIER
L
O
GO
Note:
“P” in assembly line
position indicates “Lead-Free”
D
A
T E
CODE
YE
A
R 7 =
1
997
W
E
EK 19
AS S
E
M
B
LY
L
O
T CODE
L
I
NE C
12
IRGB/S/SL4B60KD1PbF
D
2
Pak Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak Part Marking Information (Lead-Free)
T H IS
IS AN IR
F
5
30S
WIT H
P AR T
N U
M
B E R
L
O
T
COD E
8024
IN T E R N AT ION AL
R E CT IF IE R
L
O
GO
AS S E
M
B L E D
ON WW 02, 2000
IN T
H E
AS S E MB L Y
L IN E
“L ”
F
5
30S
D AT E
CODE
Y E AR
0 =
2
000
W E E K
0
2
N ote:
“P “
in as
s embly
line
pos ition
indicates “L
ead-F ree”
AS S E
M
B L Y
L
O
T
COD E
L INE
L
OR
P
A
R T
N U MB E R
IN T E R N AT ION AL
R E
C
T IF IE R
L
O
GO
F
5
30S
D
A
T E
COD E
P
=
D E S I
G
N
A
T E S
L E AD -F R E E
P R
O
D U CT
(OP T ION AL )
AS S E
M
B L Y
L
O
T
COD E
YE AR
W E E K
0
2
A =
AS S E
M
B L Y
S IT E
COD E
0 =
2
000
13
IRGB/S/SL4B60KD1PbF
TO-262 Package Outline
TO-262 Part Marking Information
E
X
AMPL E :
T H IS
IS AN IR
L3103L
L OT
CODE 1789
PAR T
NU MB E R
I
N
T E R NAT IONAL
R E CT IF IE R
LOGO
AS S E MB L E D
ON WW 19, 1997
IN T
H E
AS S E MB L Y
L
I
N
E
“
C”
DAT E
CO
D
E
YE
A
R
7 =
1
997
WE E K
19
N
o
te: “
P
” in
a
s s
e
m
bly line
pos ition
indicates “L
ead-F ree”
AS S E MB
L
Y
LOT CODE
L INE
C
O R
P
A
R T
NU MB E R
DAT E
CODE
I
N
T E R NAT IONAL
R E CT IF IE R
L OGO
P
=
DE S IGNAT E S
L E AD-F R E E
PR ODU CT
(OPT IONAL)
AS S E MB
L
Y
LOT CODE
YE
A
R
7 =
1
997
WE E K
19
A =
AS S E MB L Y
S IT E
CODE
14
IRGB/S/SL4B60KD1PbF
D
2
Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100µH, R
G
= 100
Ω.
When mounted on 1″ square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application
note #AN-994.
Energy losses include “tail” and diode reverse recovery, using Diode FD059H06A5.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
15
Note: For
the most current drawings please refer to the IR website at:
