Infineon-Technologies-IRLB3813PBF
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PD –
97407
IRLB3813PbF
HEXFET
®
Power MOSFET
Applications
l
Optimized for UPS/Inverter Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Power Tools
V
DSS
30V
R
DS(on)
max
Qg (typ.)
57nC
1.95m @V
= 10V
Ω
GS
D
Benefits
S
D
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
G
TO-220AB
l
Lead-Free
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
30
Drain-to-Source Voltage
V
± 20
Gate-to-Source Voltage
V
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
260
I
I
I
@ T
C
= 25°C
D
D
190
1050
A
@ T
C
= 100°C
DM
230
Maximum Power Dissipation
P
P
@T
C
= 25°C
D
D
W
120
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor
1.6
W/°C
-55 to
+ 175
T
T
Operating Junction and
J
Storage Temperature Range
STG
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case)
10lb in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.64
–––
62
Units
R
θ
JC
Junction-to-Case
R
θ
CS
R
θ
JA
0.50
–––
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Notes
through
are on page 9
1
07/03/09
IRLB3813PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
∆Β
30
–––
–––
V
∆
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient
–––
11
––– mV/°C
Reference to 25°C, I
D
= 1.0mA
m
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.60 1.95
2.00 2.60
V
GS
= 10V, I
D
= 60A
V
GS
= 4.5V, I
D
= 48A
V
DS
= V
GS
, I
D
= 150µA
V
GS(th)
Gate Threshold Voltage
1.35 1.90 2.35
V
∆
I
DSS
∆
V
GS(th)
/ T
J
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-7.8
–––
–––
–––
––– mV/°C
1.0
100
100
µA
V
V
DS
= 24V, V
GS
= 0V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA V
GS
= 20V
GS
= -20V
––– -100
V
gfs
Q
g
–––
57
–––
86
S
V
DS
= 15V, I
D
= 48A
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
16
–––
–––
–––
–––
–––
–––
1.3
V
DS
= 15V
Q
gs2
Q
gd
6.7
19
nC V
GS
= 4.5V
I
D
= 48A
Q
godr
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
15
See Fig. 16
Q
sw
25.7
35
Q
oss
R
G
Output Charge
nC
V
DS
= 16V, V
GS
= 0V
Gate Resistance
Turn-On Delay Time
Rise Time
0.87
36
Ω
t
d(on)
t
r
t
d(off)
t
f
–––
–––
–––
–––
V
DD
= 15V, V
GS
= 4.5V
170
33
ns I
D
= 48A
R
G
= 1.8
Ω
Turn-Off Delay Time
Fall Time
60
See Fig. 14
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 8420 –––
––– 1620 –––
V
GS
= 0V
pF V
DS
= 15V
ƒ = 1.0MHz
–––
650
–––
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
520
48
Units
mJ
Single Pulse Avalanche Energy
E
AS
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current
–––
–––
MOSFET symbol
260
(Body Diode)
A
showing the
I
SM
Pulsed Source Current
–––
––– 1050
integral reverse
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
24
1.0
36
33
V
T =
25°C, I
= 48A, V
= 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
ns T
= 25°C, I
= 48A, V
DD
= 15V
J F
Q
rr
di/dt = 244A/µs
22
nC
2
IRLB3813PbF
10000
1000
100
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
BOTTOM
BOTTOM
3.0V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
3.0V
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
I
= 120A
= 10V
D
V
GS
T
= 175°C
100
10
1
J
1.5
1.0
0.5
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
3
IRLB3813PbF
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
48A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
V
V
= 24V
= 15V
DS
DS
= C
+ C
ds
gd
10000
1000
100
C
iss
C
oss
6.0
C
rss
4.0
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
V
Q
, Total
Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
T
= 175°C
LIMITED BY R
(on)
J
DS
100µsec
1msec
T =
25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
2.5
GS
1
0.1
0
1
10
100
0.0
0.5
1.0
1.5
2.0
3.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRLB3813PbF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
250
200
150
100
50
Limited By Package
I
I
I
= 150µA
D
D
D
= 1.0mA
= 1.0A
0
-75 -50 -25
0
25 50 75
10
0
1
25 150 17
5
2
00
25
50
75
100
125
150
175
T ,
Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10.
Threshold Voltage vs. Temperature
Fig 9.
Maximum Drain Current vs.
Case Temperature
1
0.1
D = 0.50
0.20
0.10
0.05
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
0.02
0.01
0.4985
0.0022
0.0001
0.1392
0.004600
8.246580
6.149340
0.000300
τ
0.01
τ
J
τ
J
τ
C
τ
1
τ
1
Ci=
τ
i
/
Ri
τ
τ
τ
2
τ
2
3
τ
3
4
τ
4
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRLB3813PbF
12
10
8
2200
2000
1800
1600
1400
1200
1000
800
I
I
= 60A
D
D
TOP
17A
27A
BOTTOM 48A
6
T
= 125°C
4
J
600
400
2
T =
25°C
J
200
0
0
2
4
6
8
10
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
V
Gate -to -Source Voltage
(V)
GS,
Fig 13a.
Maximum Avalanche Energy
Fig 12.
On-Resistance vs. Gate Voltage
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
2
V
GS
Ω
0.01
t
p
I
AS
Fig 13c.
Unclamped Inductive Waveforms
Fig 13b.
Unclamped Inductive Test Circuit
R
D
V
V
DS
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
10%
V
GS
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms
6
IRLB3813PbF
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Current Regulator
Same Type as D.U.
T
.
Id
Vds
50K
Ω
Vgs
.2
µ
F
.3
µ
F
12V
+
V
DS
D.U.
T
.
–
Vgs(th)
Qgs1
V
GS
3mA
Qgodr
Qgd
Qgs2
I
I
D
G
Current Sampling Resistors
Fig 16b.
Gate Charge Waveform
Fig 16a.
Gate Charge Test Circuit
7
IRLB3813PbF
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
8
IRLB3813PbF
TO-220AB Part Marking Information
Notes:
When mounted on 1″ square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
ꢀ
R
θ
is measured at T
J
approximately 90°C.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 120A.
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L =
0.45
mH, R
G
= 25
Ω
,
I
AS
= 48A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
