Infineon-Technologies-IRLI520NPBF

IRLI520NPbF  

HEXFET

®

Power MOSFET  















Logic –Level Gate Drive  

Advanced Process Technology  

Isolated Package  

High Voltage Isolation = 2.5KVRMS



 

Sink to Lead Creepage Dist. = 4.8mm  

Fully Avalanche Rated  

V

DSS  

R

DS(on)  

I

D  

100V  

0.18

  

8.1A  

Lead-Free  

Description  

Fifth Generation HEXFETs from International Rectifier utilize  

advanced processing techniques to achieve extremely low

 

on-  

resistance per silicon area.

 

This benefit, combined with the fast  

switching speed and ruggedized device design that HEXFET  

Power MOSFETs are well known for, provides the designer with  

an extremely efficient and reliable device for use in a wide variety  

of applications.  

S

D

G

TO-220 Full-Pak  

G

D

S

Gate  

Drain  

Source  

The TO-220 Full Pak eliminates the need for additional insulating  

hardware in commercial-industrial applications. The molding  

compound used provides a high isolation capability and a low  

thermal resistance between the tab and external heat sink. This  

isolation is equivalent to using a 100 micron mica barrier with  

standard TO-220 product.

 

The Fullpak is mounted to a heat sink  

using a single clip or by a single screw fixing.  

Standard Pack  

Quantity  

50  

Base Part Number  

Package Type  

Orderable Part Number  

Form  

IRLI520NPbF  

TO-220 Full-Pak  

Tube  

IRLI520NPbF  

Absolute Maximum Ratings  

Symbol  

Parameter  

Max.  

8.1  

Units  

A

I

D

@ T

C

= 25°C  

Continuous Drain Current, V

GS

@ 10V  

I

D

@ T

C

= 100°C  

I

DM  

Continuous Drain Current, V

GS

@ 10V  

Pulsed Drain Current

  

Maximum Power Dissipation  

Linear Derating Factor  

5.7  

35  

30  

P

D

@T

C

= 25°C  

W

W/°C  

V

0.20  

V

GS  

E

AS  

I

AR  

Gate-to-Source Voltage  

Single Pulse Avalanche Energy (Thermally Limited)

  

Avalanche Current

  

± 16  

85  

mJ  

A

6.0  

E

AR  

dv/dt  

T

J  

Repetitive Avalanche Energy

  

3.0  

mJ  

V/ns  

Peak Diode Recovery dv/dt

  

5.0  

Operating Junction and  

-55 to

 

+ 175  

T

STG  

Storage Temperature Range  

°C  

Soldering Temperature, for 10 seconds (1.6mm from case)  

Mounting torque, 6-32 or M3 screw  

300  

10 lbf•in (1.1N•m)  

Thermal Resistance  

Symbol  

R



JC  

R



JA  

Parameter  

Junction-to-Case  

Junction-to-Ambient  

Typ.  

–––  

–––  

Max.  

5.0  

65  

Units  

°C/W  

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IRLI520NPbF  

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Min. Typ. Max.

 

Units  

100 ––– –––  

––– 0.11 ––– V/°C

 

Reference to 25°C, I

D

= 1mA

  

Conditions  

V

(BR)DSS  

Drain-to-Source Breakdown Voltage  

Breakdown Voltage Temp. Coefficient  

V

V

GS

= 0V, I

D

= 250µA  



V

(BR)DSS

/



T

J  

––– ––– 0.18  

––– ––– 0.22  

––– ––– 0.26  

V

GS

= 10V, I

D

= 6.0A  

R

DS(on)  

Static Drain-to-Source On-Resistance  

V

GS

= 5.0V, I

D

= 6.0A  

  

V

V

GS(th)  

gfs  

Gate Threshold Voltage  

Forward Trans conductance  

1.0  

3.1  

––– –––  

––– –––  

––– –––  

–––  

–––  

2.0  

–––  

25  

250  

100  

V

S

V

DS

= V

GS

, I

D

= 250µA  

V

DS

= 25V, I

D

= 6.0A

  

V

DS

= 100V, V

GS

= 0V  

I

DSS  

I

GSS  

Drain-to-Source Leakage Current  

µA  

nA  

V

DS

= 80V,V

GS

= 0V,T

J

=150°C  

Gate-to-Source Forward Leakage  

Gate-to-Source Reverse Leakage  

Total Gate Charge  

Gate-to-Source Charge  

Gate-to-Drain Charge  

Turn-On Delay Time  

Rise Time  

V

––– ––– -100  

V

GS

= -16V  

I

D

= 6.0A  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

––– –––  

––– –––  

––– –––  

–––  

–––  

–––  

–––  

20  

4.6  

10  

–––  

–––  

–––  

–––  

nC V

DS

= 80V  

V

GS

= 5.0V , See Fig. 6 and 13

  

40  

35  

23  

22  

V

DD

= 50V  

I

D

= 6.0A  

R

G

= 11



V

GS

= 5.0V

  

R

D

= 8.2



See Fig. 10

  

Between lead,  

6mm (0.25in.)  

from package  

and center of die contact  

V

GS

= 0V  

ns  

nH  

pF  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fall Time  

L

D  

L

S  

Internal Drain Inductance  

Internal Source Inductance  

–––  

–––  

4.5  

7.5  

–––  

–––  

C

iss  

C

oss  

C

rss  

C

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Drain to Sink Capacitance  

––– 440  

–––  

–––  

–––  

–––  

–––  

–––  

–––  

97  

50  

12  

V

DS

= 25V  

ƒ = 1.0MHz, See Fig. 5

  

ƒ = 1.0MHz  

Source-Drain Ratings and Characteristics  

Parameter  

Min. Typ. Max.

 

Units  

Conditions  

MOSFET symbol  

showing the  

integral reverse  

p-n junction diode.  

Continuous Source Current  

(Body Diode)  

I

S  

––– –––  

––– –––  

8.1  

35  

A

V

Pulsed Source Current  

(Body Diode)

  

I

SM  

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

––– –––  

––– 110  

––– 410  

1.3  

160  

620  

T

J

= 25°C,I

S

= 6.0A,V

GS

= 0V

  

ns T

J

= 25°C ,I

F

= 6.0A  

Q

rr  

t

on  

Reverse Recovery Charge  

Forward Turn-On Time  

nC di/dt

 

= 100A/µs

  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)  

Notes:



 



Repetitive rating;

 

pulse width limited by max. junction temperature. (See fig. 11)  



Starting T

J

= 25°C, L = 4.7mH, R

G

= 25



, I

AS

= 6.0A

 

(See fig. 12)  



I

SD



6.0A, di/dt



340A/µs, V

DD



V

(BR)DSS

, T

J



175°C.  



Pulse width



300µs; duty cycle



2%.  



t=60s, ƒ=60Hz  



Uses IRL520N data and test conditions.  

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2017-04-27  

IRLI520NPbF  

Fig. 2

Typical Output Characteristics  

Fig. 1

Typical Output Characteristics  

Fig. 4

Normalized On-Resistance  

Fig. 3

Typical Transfer Characteristics  

vs. Temperature  

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2017-04-27  

IRLI520NPbF  

Fig 5.

 

Typical Capacitance vs.  

Fig 6.

 

Typical Gate Charge vs.  

Drain-to-Source Voltage  

Gate-to-Source Voltage  

Fig. 7

Typical Source-to-Drain Diode  

Fig 8.

 

Maximum Safe Operating Area  

Forward Voltage  

4

2017-04-27  

IRLI520NPbF  

Fig 10a.

 

Switching Time Test Circuit  

Fig 9.

 

Maximum Drain Current vs. Case Temperature  

Fig 10b.

 

Switching Time Waveforms  

Fig 11.

 

Maximum Effective Transient Thermal Impedance, Junction-to-Case  

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2017-04-27  

IRLI520NPbF  

15V  

DRIVER  

+

L

V

DS  

D.U.T  

AS  

R

G

V

DD  

–

I

A

20V  

0.01  



t

p

Fig 12a.

 

Unclamped Inductive Test Circuit  

V

(BR)DSS  

t

p

Fig 12c.

Maximum Avalanche Energy  

vs. Drain Current  

I

AS  

Fig 12b.

 

Unclamped Inductive Waveforms  

Fig 13a.

 

Gate Charge Waveform  

Fig 13b.

 

Gate Charge Test Circuit  

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IRLI520NPbF  

Fig 14.

Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs  

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IRLI520NPbF  

TO-220 Full-Pak Package Outline

(Dimensions are shown in millimeters (inches))  

TO-220 Full-Pak Part Marking Information  

TO-220AB Full-Pak

 

packages are not recommended for Surface Mount Application.  

Note: For the most current drawing please refer to

 

website at

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IRLI520NPbF  

Qualification Information  

Qualification Level  

Industrial  

(per JEDEC JESD47F)

†  

TO-220 Full-Pak  

N/A  

Yes  

Moisture Sensitivity Level  

RoHS Compliant  

†

Applicable version of JEDEC standard at the time of product release.  

Revision History  

Date  

Comments  



Changed datasheet with Infineon logo – all pages.  



Corrected Package Outline on page 8.  



Added disclaimer on last page.  

4/27/17  

Trademarks of Infineon Technologies AG  

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,  

CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,  

GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,  

OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID  

FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™  

Trademarks updated November 2015  

Other Trademarks  

All referenced product or service names and trademarks are the property of their respective owners.  

IMPORTANT NOTICE  

Edition 2016-04-19  

Published by  

Infineon Technologies AG  

81726 Munich, Germany  

For further information on the product, technology,  

delivery terms and conditions and prices please  

contact your nearest Infineon Technologies o

ff

ice  

(

).  

The information given in this document shall in no  

event be regarded as a guarantee of conditions or  

characteristics (“Bescha

ff

enheitsgarantie”) .  

With respect to any examples, hints or any typical  

values stated herein and/or any information  

regarding the application of the product, Infineon  

Technologies hereby disclaims any and all  

warranties and liabilities of any kind, including  

without limitation warranties of non-infringement  

of intellectual property rights of any third party.  

Please note that this product is not qualified  

according to the AEC Q100 or AEC Q101 documents  

of the Automotive Electronics Council.  

© 2016 Infineon Technologies AG.  

All Rights Reserved.  

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In addition, any information given in this

 

contain dangerous substances. For information on  

document

is subject to customer’s compliance

 

the types in question please contact your nearest  

with its

obligations stated in this document and

 

Infineon Technologies o

ff

ice.  

any applicable legal requirements, norms and  

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any use of the product of Infineon Technologies in  

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customer’s applications.  

Document reference  

ifx1  

authorized  

representatives  

of  

Infineon  

Technologies,

Infineon Technologies’ products  

may

not be used in any applications where a  

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The data contained in this document is exclusively  

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ff

. It is the  

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9

2017-04-27