Infineon-Technologies-IRLL014NTRPBF

PD- 95154  

IRLL014NPbF  

HEXFET

®

Power MOSFET  

l

Surface Mount  

D

l

Advanced Process Technology  

l

Ultra Low On-Resistance  

l

Dynamic dv/dt Rating  

l

Fast Switching  

l

Fully Avalanche Rated  

l

Lead-Free  

V

DSS

= 55V  

R

DS(on)

= 0ꢀ14

Ω  

G

I

D

= 2ꢀ0A  

S

Description  

Fifth Generation HEXFETs from International Rectifier  

utilize advanced processing techniques to achieve  

extremely low on-resistance per silicon area” This benefit,  

combined with the fast switching speed and ruggedized  

device design that HEXFET Power MOSFETs are well  

know

n

f

or, provide

s

t

h

e

d

esigne

r

w

it

h

a

n

e

xtremel

y

e

fficient  

and reliable device for use in a wide variety of applications”  

The SOT-223 package is designed for surface-mount  

usin

g

v

apo

r

p

hase, infr

a

r

ed, o

r

w

av

e

s

olderin

g

t

echniques”  

Its unique package design allows for easy automatic pick-  

and-place as with other SOT or SOIC packages but has  

the added advantage of improved thermal performance  

due to an enlarged tab for heatsinking”

 

Power dissipation  

of 1″0W is possible in a typical surface mount application”  

SOT-223  

Absolute Maximum Ratings  

Parameter  

Maxꢀ  

2ꢀ8  

2ꢀ0  

1ꢀ6  

16  

Units  

I

D

@ T

A

= 25°C  

I

D

@ T

A

= 25°C  

I

D

@ T

A

= 70°C  

I

DM  

Continuous Drain Current, V

GS

@ 10V**  

Continuous Drain Current, V

GS

@ 10V*  

Continuous Drain Current, V

GS

@ 10V*  

Pulsed Drain Current

  

A

P

D

@T

A

= 25°C  

P

D

@T

A

= 25°C  

Power Dissipation

 

(PCB Mount)**  

Power Dissipation

 

(PCB Mount)*  

Linear Derating Factor

 

(PCB Mount)*  

Gate-to-Source Voltage  

2ꢀ1  

1ꢀ0  

8ꢀ3  

± 16  

32  

W

W

mW/°C  

V

V

GS  

E

AS  

Single Pulse Avalanche Energy

‚  

Avalanche Current

  

mJ  

A

I

AR  

2ꢀ0  

0ꢀ1  

7ꢀ2  

E

AR  

Repetitive Avalanche Energy



*  

Peak Diode Recovery dv/dt

ƒ  

Junction and Storage Temperature Range  

mJ  

V/ns  

°C  

dv/dt  

T

J,

T

STG  

-55 to

 

+ 150  

Thermal Resistance  

Parameter  

Junction-to-Ambꢀ (PCB Mount, steady state)*  

Typꢀ  

90  

Maxꢀ  

120  

Units  

R

θ

JA  

R

θ

JA  

°C/W  

Junction-to-Ambꢀ (PCB Mount, steady state)**  

50  

60  

* When

 

mounted on FR-4 board using minimum recommended footprintꢀ  

** When mounted on 1 inch square copper board, for comparison with other SMD devicesꢀ  

1

4/20/04  

IRLL014NPbF  

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Minꢀ Typꢀ Maxꢀ Units  

55 –––

 

–––  

Conditions  

V

GS

= 0V, I

D

= 250µA  

V

(BR)DSS  

Drain-to-Source Breakdown Voltage  

V

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Tempꢀ Coefficient

 

––– 0ꢀ015

 

––– V/°C

 

Reference to 25°C, I

D

= 1mA  

––– –––

 

0ꢀ14  

––– –––

 

0ꢀ20  

––– –––

 

0ꢀ28  

V

GS

= 10V, I

D

= 2ꢀ0A

„  

V

GS

= 5ꢀ0V, I

D

= 1ꢀ2A

„  

V

GS

= 4ꢀ0V, I

D

= 1ꢀ0A

„  

V

DS

= V

GS

, I

D

= 250µA  

V

DS

= 25V, I

D

= 1ꢀ0A  

V

DS

= 55V, V

GS

= 0V  

V

DS

= 44V, V

GS

= 0V, T

J

= 150°C  

V

GS

= 16V  

R

DS(on)  

Static Drain-to-Source On-Resistance  

Ω

V

GS(th)  

g

fs  

Gate Threshold Voltage  

1ꢀ0  

2ꢀ3  

––– 2ꢀ0  

––– –––  

V

S

Forward Transconductance  

––– ––– 25  

––– –––

 

250  

––– –––

 

100  

––– –––

 

-100  

I

DSS  

I

GSS  

Drain-to-Source Leakage Current  

µA  

nA  

Gate-to-Source Forward Leakage  

Gate-to-Source Reverse Leakage  

Total Gate Charge  

V

GS

= -16V  

Q

g  

–––  

–––  

–––  

–––  

–––  

–––  

–––  

9ꢀ5  

14  

I

D

= 2ꢀ0A  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-to-Source Charge  

Gate-to-Drain (“Miller”) Charge  

Turn-On Delay Time  

Rise Time  

1ꢀ1 1ꢀ7  

3ꢀ0 4ꢀ4  

5ꢀ1 –––  

4ꢀ9 –––  

14 –––  

2ꢀ9 –––  

nC V

DS

= 44V  

V

GS

= 10V, See Figꢀ 6 and 9

„  

V

DD

= 28V  

I

D

= 2ꢀ0A  

ns  

pF  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fall Time  

R

G

= 6ꢀ0

Ω  

R

D

= 14

Ω,

See Figꢀ 10

„  

V

GS

= 0V  

C

iss  

C

oss  

C

rss  

Input Capacitance  

––– 230

 

–––  

Output Capacitance  

–––  

–––  

66 –––  

30 –––  

V

DS

= 25V  

Reverse Transfer Capacitance  

ƒ = 1ꢀ0MHz, See Figꢀ 5  

Source-Drain Ratings and Characteristics  

Parameter  

Continuous Source Current  

(Body Diode)  

Minꢀ Typꢀ Maxꢀ Units  

Conditions  

MOSFET symbol  

I

S  

––– ––– 1ꢀ3  

A

showing the  

I

S

M  

Pulsed Source Current  

(Body Diode)

  

integral reverse  

–––  

––– ––– 1ꢀ0  

––– 41

 

61  

––– 73 110  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)  

16  

–––  

p-n junction diodeꢀ  

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse RecoveryCharge  

Forward Turn-On Time  

V

T

J

= 25°C, I

S

= 2ꢀ0A, V

GS

= 0V

„  

T

J

= 25°C, I

F

= 2ꢀ0A  

ns  

Q

rr  

t

on  

nC di/dt

 

= 100A/µs

„  

Notes:  



Repetitive rating;

 

pulse width limited by  

ƒ

I

SD

≤

2ꢀ0A, di/dt

≤

170A/µs, V

DD

≤

V

(BR)DSS  

T

J

≤

150°C  

,

maxꢀ junction temperatureꢀ ( See figꢀ 11 )  

‚

V

DD

= 25V, starting T

J

= 25°C, L = 4ꢀ0mH  

R

G

= 25

Ω

, I

AS

= 4ꢀ0Aꢀ (See Figure 12)  

„

Pulse width

≤

300µs; duty cycle

≤

2%ꢀ  

2

IRLL014NPbF  

100  

10  

1

100  

10  

1

VGS  

15V  

VGS  

15V  

TOP  

TOP  

10V  

10V  

7.0V  

5.5V  

4.5V  

4.0V  

3.5V  

7.0V  

5.5V  

4.5V  

4.0V  

3.5V  

BOTTOM 3.0V  

BOTTOM 3.0V  

3.0V  

20µs PULSE WIDTH  

20µs PULSE WIDTH  

T

J

3.0V  

T

J

= 25°C  

= 150°C  

A

A

100  

0.1  

1

10  

100  

0.1  

1

10  

V

, Drain-to-Source Voltage (V)  

V

, Drain-to-Source Voltage (V)  

DS  

DS  

Fig 2ꢀ

 

Typical Output Characteristics,  

Fig 1ꢀ

 

Typical Output Characteristics,  

2.0  

1.5  

1.0  

0.5  

0.0  

100  

I

= 2.0A  

D

10  

T

J

= 25°C  

T

J

= 150°C  

V

DS

= 25V  

20µs PULSE WIDTH  

V

= 10V  

GS  

1

A

-60 -40 -20  

0

20 40 60 80

 

100 120 140 160  

3.0  

4.0  

5.0  

6.0  

T ,

 

Junction Temperature (°C)  

V

GS

, Gate-to-Source Voltage (V)  

J

Fig 3ꢀ

 

Typical Transfer Characteristics  

Fig 4ꢀ

 

Normalized On-Resistance  

Vsꢀ Temperature  

3

IRLL014NPbF  

20  

16  

12  

8

400  

V

C

C

C

= 0V,  

f = 1MHz  

I

= 2.0A  

D

GS  

iss  

rss  

oss  

= C

 

+ C  

,

C

SHORTED  

gs  

gd  

gd  

ds  

V

V

= 44V  

= 28V  

DS  

DS  

= C  

= C

 

+ C  

ds  

gd  

300  

200  

100  

0

C

C

iss  

oss  

C

rss  

4

FOR TEST CIRCUIT  

SEE FIGURE 9  

0

A

A

1

10  

100  

0

3

6

9

12  

15  

V

, Drain-to-Source Voltage (V)  

Q

, Total Gate Charge (nC)  

DS  

G

Fig 5ꢀ

 

Typical Capacitance Vsꢀ  

Fig 6ꢀ

 

Typical Gate Charge Vsꢀ  

Drain-to-Source Voltage  

Gate-to-Source Voltage  

100  

100  

10  

1

OPERATION IN THIS AREA LIMITED  

BY R  

DS(on)  

10µs  

10  

100µs  

T =

 

150°C  

J

T =

 

25°C  

J

1ms  

1

10ms  

T

T

= 25°C  

= 150°C  

A

J

Single Pulse  

V

= 0V  

GS  

A

0.1  

0.1  

A

100  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

1.6  

1

10  

V

, Drain-to-Source Voltage (V)  

V

, Source-to-Drain Voltage (V)  

DS  

SD  

Fig 8ꢀ

 

Maximum Safe Operating Area  

Fig 7ꢀ

 

Typical Source-Drain Diode  

Forward Voltage  

4

IRLL014NPbF  

R

D  

V

DS  

Q

G

10V  

V

GS  

DꢀUꢀTꢀ  

Q

Q

GD  

GS  

R

G  

–

V

G

10V  

Pulse Width

≤ 1

µs  

Duty Factor

≤ 0.1 %  

Charge  

Fig 9aꢀ

 

Basic Gate Charge Waveform  

Fig 10aꢀ

 

Switching Time Test Circuit  

Current Regulator  

Same Type as D.U.

T

.  

V

DS  

50K

Ω  

90%  

.2

µ

F  

12V  

.3

µ

F  

+

V

DS  

D.U.

T

.  

–

10%  

V

GS  

V

GS  

t

t

r

t

t

f

3mA  

d(on)  

d(off)  

I

I

D

G

Current Sampling Resistors  

Fig 9bꢀ

 

Gate Charge Test Circuit  

Fig 10bꢀ

 

Switching Time Waveforms  

1000  

100  

10  

1

D = 0.50  

0.20  

0.10  

0.05  

P

DM  

0.02  

0.01  

t

1

t

2

Notes:  

1. Duty factor D =

 

t /

 

t  

SINGLE PULSE  

(THERMAL RESPONSE)  

1

2

2. Peak T

 

= P  

DM  

x Z  

+ T  

thJA  

A

J

A

0.1  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

t

1

, Rectangular Pulse Duration (sec)  

Fig 11ꢀ

 

Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

5

IRLL014NPbF  

80  

60  

40  

20  

0

I

D

TOP  

1.8A  

3.2A  

BOTTOM 4.0A  

15V  

DRIVER  

+

L

V

DS  

D.U.T  

R

G

V

DD  

–

I

A

AS  

10V  

Ω

0.01  

t

p

Fig 12aꢀ

 

Unclamped Inductive Test Circuit  

V

= 25V  

50  

DD  

A

150  

V

25  

75  

100  

125  

(BR)DSS  

Starting T

 

, Junction Temperature (°C)  

J

t

p

Fig 12cꢀ

 

Maximum Avalanche Energy  

Vsꢀ Drain Current  

I

AS  

Fig 12bꢀ

 

Unclamped Inductive Waveforms  

6

IRLL014NPbF  

Peak Diode Recovery dv/dt Test Circuit  

+

ƒ

–

Circuit Layout Considerations  

•

Low Stray Inductance  

•

Ground Plane  

•

Low Leakage Inductance  

Current Transformer  

DꢀUꢀT  

+

‚

–

„

–

+



R

G  

•

dv/dt controlled by R

G  

+

–

•

Driver same type as DꢀUꢀTꢀ  

•

I

SD

controlled by Duty Factor “D”  

•

DꢀUꢀTꢀ – Device Under Test  

V

DD  

Driver Gate Drive  

P.W.  

P

.

W.  

Period  

Period  

D =  

V

=10V  

*

GS  

D.U.

T

. I

 

W

aveform  

SD  

Reverse  

Recovery  

Current  

Body Diode Forward  

Current  

di/dt  

D.U.

T

. V

 

W

aveform  

DS  

Diode Recovery  

dv/dt  

V

DD  

Re-Applied  

Voltage  

Body Diode  

Forward Drop  

Inductor Curent  

I

SD  

Ripple

≤

5%  

*

V

GS

= 5V for Logic Level Devices  

Fig 13ꢀ

For N-Channel HEXFETS  

7

IRLL014NPbF  

SOT-223 (TO-261AA) Package Outline  

Dimensions are shown in milimeters (inches)  

SOT-223 (TO-261AA) Part Marking Information  

HEXFET PR

O

D

U

C

T MA

R

KING  

THIS IS

A

N

I

RFL014  

L

O

T CO

D

E  

P

A

R

T

N

U

M

B

ER  

IN

T

ER

N

A

T

I

O

NAL  

RE

C

T

IFIER  

L

O

GO  

FL

0

14  

314P  

AXXXX  

A=

A

S

SE

M

B

LY

 

SITE  

CODE  

DAT E

 

CODE  

(YYWW)  

YY =

 

Y

E

A

R  

WW =

 

W

E

EK  

B

O

T

T

O

M  

T

O

P  

P =

 

DE S IGNAT

E

S

 

LE

A

D-F

R

EE  

PR

O

D

U

C

T (O

P

TI

O

NA

L

)  

8

IRLL014NPbF  

SOT-223 (TO-261AA)

T

a

pe & Reel Information  

Dimensions are shown in milimeters (inches)  

4.10 (.161)  

3.90 (.154)  

0.35 (.013)  

0.25 (.010)  

1.85 (.072)  

1.65 (.065)  

2.05 (.080)  

1.95 (.077)  

TR  

7.55 (.297)  

7.45 (.294)  

16.30 (.641)  

15.70 (.619)  

7.60 (.299)  

7.40 (.292)  

1.60 (.062)  

1.50 (.059)  

TYP.  

FEED DIRECTION  

2.30 (.090)  

2.10 (.083)  

7.10 (.279)  

6.90 (.272)  

12.10 (.475)  

11.90 (.469)  

NOTES :  

1. CONTROLLING DIMENSION: MILLIMETER.  

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.  

13.20 (.519)  

12.80 (.504)  

15.40 (.607)  

11.90 (.469)  

4

330.00  

(13.000)  

MAX.  

50.00 (1.969)  

MIN.  

18.40 (.724)  

MAX.  

NOTES :  

1. OUTLINE

 

COMFORMS TO EIA-418-1.  

2. CONTROLLING

 

DIMENSION: MILLIMETER..  

3. DIMENSION

 

MEASURED @ HUB.  

4. INCLUDES

 

FLANGE DISTORTION @ OUTER EDGE.  

14.40 (.566)  

12.40 (.488)  

4

3

Data and specifications subject to change without notice.  

IR WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  

TAC Fax: (310) 252-7903  

.

04/04  

9