Infineon-Technologies-IRLL024NTRPBF

PD – 95221  

IRLL024NPbF  

HEXFET

®

Power MOSFET  

l

Surface Mount  

l

Advanced Process Technology  

l

Ultra Low On-Resistance  

l

Dynamic dv/dt Rating  

l

Fast Switching  

l

Fully Avalanche Rated  

l

Lead-Free  

D

V

DSS

= 55V  

R

G

I

D

= 3.1A  

S

Description  

Fifth Generation HEXFETs from International Rectifier  

utilize advanced processing techniques to achieve  

extremel

y

l

ow on-resistanc

e

p

e

r

s

ilico

n

a

rea. Thi

s

b

enefit,  

combined with the fast switching speed and ruggedized  

device design that HEXFET Power MOSFETs are well  

know

n

f

or

,

p

rovide

s

t

h

e

d

esigne

r

w

it

h

a

n

e

xtremel

y

e

fficient  

an

d

r

eliabl

e

d

evic

e

f

o

r

u

s

e

i

n

a

w

id

e

v

ariet

y

o

f

a

pplications.  

The SOT-223 package is designed for surface-mount  

usin

g

v

apo

r

p

hase

,

i

nfr

a

r

ed

,

o

r

w

av

e

s

olderin

g

t

echniques.  

Its unique package design allows for easy automatic pick-  

and-place as with other SOT or SOIC packages but has  

the added advantage of improved thermal performance  

due to an enlarged tab for heatsinking.

 

Power dissipation  

of 1.0W is possible in a typical surface mount application.  

S O T -223  

Absolute Maximum Ratings  

Parameter  

Max.  

4.4  

3.1  

2.5  

12  

Units  

I

D

@ T

A

= 25°C  

I

D

@ T

A

= 25°C  

Continuous Drain Current, V

GS

@ 10V**  

Continuous Drain Current, V

GS

@ 10V*  

Continuous Drain Current, V

GS

@ 10V*  

Pulsed Drain Current

  

A

I

D

@ T

A

= 70°C  

I

DM  

P

D

@T

A

= 25°C  

P

D

@T

A

= 25°C  

Power Dissipation

 

(PCB Mount)**  

Power Dissipation

 

(PCB Mount)*  

Linear Derating Factor

 

(PCB Mount)*  

Gate-to-Source Voltage  

2.1  

1.0  

8.3  

± 16  

120  

3.1  

W

W

mW/°C  

V

V

GS  

E

AS  

Single Pulse Avalanche Energy

‚  

Avalanche Current

  

mJ  

A

I

AR  

E

AR  

Repetitive Avalanche Energy



*  

Peak Diode Recovery dv/dt

ƒ  

0.1  

mJ  

V/ns  

°C  

dv/dt  

T

J,

T

STG  

5.0  

Junction and Storage Temperature Range  

-55 to

 

+ 150  

Thermal Resistance  

Parameter  

Junction-to-Amb. (PCB Mount, steady state)*  

Junction-to-Amb. (PCB Mount, steady state)**  

Typ.  

90  

Max.  

120  

60  

Units  

R

θ

JA  

R

θ

JA  

°C/W  

50  

* When

 

mounted on FR-4 board using minimum recommended footprint.  

** When mounted on 1 inch square copper board, for comparison with other SMD devices.  

1

04/27/04  

IRLL024NPbF  

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Min. Typ. Max. Units  

55 –––

 

–––  

––– 0.048

 

––– V/°C

 

Reference to 25°C, I

D

= 1mA  

Conditions  

V

(BR)DSS  

Drain-to-Source Breakdown Voltage  

V

V

GS

= 0V, I

D

= 250µA  

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient  

––– –––

 

0.065  

––– –––

 

0.080  

––– –––

 

0.100  

V

GS

= 10V, I

D

= 3.1A

„  

V

GS

= 5.0V, I

D

= 2.5A

„  

V

GS

= 4.0V, I

D

= 1.6A

„  

V

DS

= V

GS

, I

D

= 250µA  

V

DS

= 25V, I

D

= 1.9 A  

R

DS(on)  

Static Drain-to-Source On-Resistance  

Ω

V

GS(th)  

g

fs  

Gate Threshold Voltage  

1.0  

3.3  

––– 2.0  

––– –––  

V

S

Forward Transconductance  

––– ––– 25  

––– –––

 

250  

––– –––

 

100  

––– –––

 

-100  

––– 10.4

 

15.6  

V

DS

= 55V, V

GS

= 0V  

I

DSS  

I

GSS  

Drain-to-Source Leakage Current  

µA  

nA  

V

DS

= 44V, V

GS

= 0V, T

J

= 125°C  

Gate-to-Source Forward Leakage  

Gate-to-Source Reverse Leakage  

Total Gate Charge  

V

GS

= 16V  

V

GS

= -16V  

I

D

= 1.9A  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-to-Source Charge  

Gate-to-Drain (“Miller”) Charge  

Turn-On Delay Time  

Rise Time  

–––  

–––  

–––  

–––  

–––  

–––  

1.5 2.3  

5.5 8.3  

7.4 –––  

21 –––  

18 –––  

25 –––  

nC V

DS

= 44V  

V

GS

= 5.0V, See Fig. 6 and 9

„  

V

DD

= 28V  

I

D

= 1.9A  

ns  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fall Time  

R

G

= 24

Ω  

R

D

= 15

Ω,

See Fig. 10

„  

V

GS

= 0V  

C

iss  

C

oss  

C

rss  

Input Capacitance  

––– 510

 

–––  

––– 140

 

–––  

Output Capacitance  

pF  

V

DS

= 25V  

Reverse Transfer Capacitance  

–––  

58 –––  

ƒ = 1.0MHz, See Fig. 5  

Source-Drain Ratings and Characteristics  

Parameter  

Continuous Source Current  

(Body Diode)  

Min. Typ. Max. Units  

Conditions  

MOSFET symbol  

I

S  

––– ––– 3.1  

A

showing the  

I

SM  

Pulsed Source Current  

(Body Diode)

  

integral reverse  

––– –––

 

12  

p-n junction diode.  

T

J

= 25°C, I

S

= 1.9A, V

GS

= 0V

„  

T

J

= 25°C, I

F

= 1.9A  

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse RecoveryCharge  

Forward Turn-On Time  

––– ––– 1.0  

V

––– 39  

––– 63  

58  

94  

ns  

Q

rr  

t

on  

nC di/dt

 

= 100A/µs

„  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)  

Notes:  



Repetitive rating;

 

pulse width limited by  

ƒ

I

SD

≤

1.9A, di/dt

≤

270A/µs, V

DD

≤

V

(BR)DSS  

T

J

≤

150°C  

,

max. junction temperature. ( See fig. 11 )  

‚

Starting T

J

= 25°C, L = 25 mH  

„

Pulse width

≤

300µs; duty cycle

≤

2%.  

R

G

= 25

Ω

, I

AS

= 3.1A. (See Figure 12)  

2

IRLL024NPbF  

100  

10  

1

100  

10  

1

VGS  

15V  

VGS  

15V  

10V  

7.0V  

5.5V  

4.5V  

4.0V  

3.5V  

TOP  

TOP  

10V  

7.0V  

5.5V  

4.5V  

4.0V  

3.5V  

BOTTOM 2.7V  

BOTTOM 2.7V  

2.7V  

2.7V  

20µs PULSE WIDTH  

T =

 

150 C  

J

20µs PULSE WIDTH  

°

°

T =

 

25 C  

J

0.1  

1

10  

100  

0.1  

1

10  

100  

V

, Drain-to-Source Voltage (V)  

V

, Drain-to-Source Voltage (V)  

DS  

DS  

Fig 1.

 

Typical Output Characteristics  

Fig 2.

 

Typical Output Characteristics  

2.0  

100  

3.1A  

=

I

D

°

T =

 

25 C  

J

1.5  

1.0  

0.5  

0.0  

°

T =

 

150 C  

J

10  

V

= 25V  

DS  

20µs PULSE WIDTH  

V

=

1

0V  

GS  

1

2

4

6

8

10  

12  

-60 -40 -20  

0

20 40 60 80

 

100 120 140 160  

°

V

, Gate-to-Source Voltage (V)  

T ,

 

Junction Temperature (

 

C)  

J

GS  

Fig 3.

 

Typical Transfer Characteristics  

Fig 4.

 

Normalized On-Resistance  

Vs. Temperature  

3

IRLL024NPbF  

15  

12  

9

1000  

I

D

= 1.9A  

V

= 0V,  

f = 1MHz  

C

GS  

C

= C

 

+ C  

SHORTED  

ds  

iss  

gs  

gd ,  

gd  

C

= C  

gd  

rss  

C

= C

 

+ C  

800  

600  

400  

200  

0

oss ds  

V

V

V

= 44V  

= 27V  

= 11V  

DS  

DS  

DS  

C

iss  

6

C

oss  

3

C

rss  

FOR TEST CIRCUIT  

SEE FIGURE 13  

0

1

10  

100  

0

4

8

12  

16  

20  

V

, Drain-to-Source Voltage (V)  

Q

, Total Gate Charge (nC)  

DS  

G

Fig 6.

 

Typical Gate Charge Vs.  

Fig 5.

 

Typical Capacitance Vs.  

Gate-to-Source Voltage  

Drain-to-Source Voltage  

100  

100  

10  

1

OPERATION IN THIS AREA LIMITED  

BY R  

DS(on)  

10  

100us  

1ms  

°

T =

 

150 C  

J

1

10ms  

°

T =

 

25 C  

J

°

T =

 

25 C  

C

°

T =

 

150 C  

Single Pulse  

J

V

= 0 V  

GS  

1.2  

0.1  

0.4  

0.1  

0.6  

0.8  

1.0  

1.4  

0.1  

1

10  

100  

1000  

V

,Source-to-Drain Voltage (V)  

V

, Drain-to-Source Voltage (V)  

SD  

DS  

Fig 8.

 

Maximum Safe Operating Area  

Fig 7.

 

Typical Source-Drain Diode  

Forward Voltage  

4

IRLL024NPbF  

4.0  

3.0  

2.0  

1.0  

0.0  

R

D  

V

DS  

V

GS  

D.U.T.  

R

G  

–

5.0V  

Pulse Width

≤ 1

µs  

Duty Factor

≤ 0.1 %  

Fig 10a.

 

Switching Time Test Circuit  

V

DS  

90%  

25  

50  

T

75  

100  

125  

150  

°

, Case Temperature

 

( C)  

C

10%  

V

GS  

Fig 9.

 

Maximum Drain Current Vs.  

t

t

r

t

t

f

d(on)  

d(off)  

Case Temperature  

Fig 10b.

 

Switching Time Waveforms  

1000  

100  

10  

1

D = 0.50  

0.20  

0.10  

0.05  

P

DM  

0.02  

0.01  

t

1

t

2

Notes:  

1. Duty factor D =  

t /

 

t  

1 2  

SINGLE PULSE  

(THERMAL RESPONSE)  

2. Peak T

 

=

P  

J

x Z  

+ T  

10  

DM  

thJA  

A

0.1  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

100  

t ,

 

Rectangular Pulse Duration (sec)  

1

Fig 11.

 

Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

5

IRLL024NPbF  

300  

250  

200  

150  

100  

50  

I

D

TOP  

1.4A  

2.5A  

BOTTOM 3.1A  

15V  

DR

I

VER  

L

V

D S  

D

.

U .T  

AS  

R

G

+

V

DD  

–

I

A

10V  

t

0.01

Ω  

p

Fig 12a.

 

Unclamped Inductive Test Circuit  

0

25  

50  

75  

100  

125  

150  

°

Starting T

 

, Junction Temperature

 

( C)  

J

V

(BR)DSS  

t

p

Fig 12c.

 

Maximum Avalanche Energy  

Vs. Drain Current  

I

AS  

Current Regulator  

Fig 12b.

 

Unclamped Inductive Waveforms  

Same Type as D.U.

T

.  

50K

Ω  

.2

µ

F  

12V  

Q

G

.3

µ

F  

+

5.0 V  

V

DS  

D.U.

T

.  

–

Q

Q

GD  

GS  

V

GS  

V

G

3mA  

I

I

D

G

Charge  

Current Sampling Resistors  

Fig 13b.

 

Gate Charge Test Circuit  

Fig 13a.

 

Basic Gate Charge Waveform  

6

IRLL024NPbF  

SOT-223 (TO-261AA) Package Outline  

Dimensions are shown in milimeters (inches)  

SOT-223 (TO-261AA) Part Marking Information  

HE XF E T

 

PR

O

D

U

C

T MA

R

KING  

THIS IS

A

N

I

RFL

0

14  

L

O

T CODE  

P

A

R

T

N

U

M

B

ER  

IN

T

ER

N

A

T

I

ON

A

L  

RE

C

T

I

F

I

ER  

L

O

GO  

FL

0

14  

314P  

A

X

XXX  

A =

 

A

S S E MB L Y

 

S

I

T E  

CODE  

D

A

T

E

C

ODE  

(YYWW)  

YY =

 

YE

A

R  

WW =

 

W

E

EK  

B

O

T

T

O

M  

T

O

P  

P =

 

D

E

S

I

G

N

A

T

ES LE

A

D-

F

REE  

PR

O

D

U

C

T (O

P

T

 

I

O

N

A

L

)  

7

IRLL024NPbF  

SOT-223 (TO-261AA)

T

a

pe & Reel Information  

Dimensions are shown in milimeters (inches)  

4.10 (.161)  

0.35 (.013)  

0.25 (.010)  

1

.

8

5 (.072)  

3.90 (.154)  

2

.

0

5 (.080)  

1

.

9

5 (.077)  

1

.

6

5 (.065)  

T R  

7.55 (.297)  

7.45 (.294)  

16.30 (.641)  

15.70 (.619)  

7.60 (.299)  

7.40 (.292)  

1.60 (

.

0

62)  

1.50 (

.

0

59)  

TYP .  

FE E D

 

D

I

R E C T IO N  

2.30 (

.

0

 

9

0)  

2.10 (

.

0

 

8

3)  

7.10 (.279)  

6.90 (.272)  

12.10 (.475)  

11.90 (.469)  

N O T E S  

1. C

 

O N TR O LLIN G

 

D IM E N S IO N :

 

M ILLIM E TE R .  

2. O

 

U T LIN E

 

C O N F O R M S

 

TO E

 

IA -481

 

E IA -541.  

:

&

3. E

 

A C H

 

O 330.00

 

(13.0 0)

 

R E E L

 

C O N TA IN S

 

2,500 D

 

E VIC E S.  

13.20 (.51

 

9)  

12.80 (.50

 

4)  

15.40 (.607)  

11.90 (.469)  

4

330.00  

(13.000)  

MAX.  

50.00 (1

.

9

69)  

M IN .  

18.40 (.724)  

M

A

X .  

N O

T

E S  

:

1. O

 

U T LIN E

 

C O M FO R MS

 

TO E

 

I

A –

4

18-1.  

2. C

 

O N TR O LL

I

N G

 

D IM EN SIO N :

 

M ILLIM ET ER ..  

3. D

 

IM E N S IO N

 

M E AS U R E D  

14.40 (.566)  

12.40 (.488)  

4

@

H

U

 

B.  

4.

I

N

 

C

LU D E S

 

F LA N G E

 

D IS TO R T

I

O N  

@

O U T

E

R

 

ED G E .  

3

Data and specifications subject to change without notice.  

IR WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  

TAC Fax: (310) 252-7903  

.

04/04  

8