Infineon-Technologies-IRLML6344TRPBF
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IRLML6344TRPbF
HEXFET
®
Power MOSFET
V
DS
30
V
V
G
S
1
2
V
GS Max
± 12
R
DS(on) max
(@V
GS
= 4.5V)
3
D
29
37
m
Ω
m
Ω
TM
Micro3 (SOT-23)
R
DS(on) max
(@V
GS
= 2.5V)
IRLML6344TRPbF
Application(s)
•
Load/ System Switch
Features and Benefits
Benefits
Low R
DSon
(<29m )
Ω
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability
Industry-standard SOT-23 Package
results in
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Standard Pack
Base Part
Number
Orderable Part Number
Package Type
Form
Quantity
™
IRLML6344TRPbF
M
i
cro3 (SOT-23)
Tape and Reel
3000
IRLML6344TRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
V
DS
30
5.0
4.0
25
Drain-Source Voltage
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
1.3
0.8
0.01
± 12
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
V
GS
Gate-to-Source Voltage
T
J,
T
STG
-55 to
+ 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
R
θ
Junction-to-Ambient
JA
°C/W
R
θ
–––
99
JA
Junction-to-Ambient (t<10s)
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
1
Decem
ber 19, 2014
IRLML6344TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
0.02
22
–––
–––
29
V
V
GS
= 0V, I
D
= 250
μ
A
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.5
V/°C Reference
to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 5.0A
R
DS(on)
m
Ω
Static Drain-to-Source On-Resistance
27
37
V
GS
= 2.5V, I
D
= 4.0A
V
GS(th)
I
DSS
Gate Threshold Voltage
0.8
–––
–––
–––
–––
1.7
–––
6.8
0.3
2.4
4.2
5.6
22
1.1
V
V
DS
= V
GS
, I
D
= 10
μ
A
–––
–––
–––
–––
–––
19
1.0
V
DS
=24V, V
GS
= 0V
Drain-to-Source Leakage Current
μ
A
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
V
GS
= 12V
GS
= -12V
nA
V
R
G
Ω
gfs
Q
g
S
V
DS
= 10V, I
D
= 5.0A
I
D
= 5.0A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
V
DS
=15V
V
GS
= 4.5V
V
DD
=15V
Rise Time
I
D
= 1.0A
Ω
R
G
= 6.8
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
9.1
650
65
V
GS
= 4.5V
C
iss
C
oss
C
rss
Input Capacitance
V
GS
= 0V
pF
Output Capacitance
V
DS
= 25V
Reverse Transfer Capacitance
46
ƒ = 1.0MHz
Source – Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
D
–––
–––
–––
1.3
(Body Diode)
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
–––
25
S
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
10
1.2
15
V
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
ns T
J
= 25°C, V
R
= 15V, I
F
=1.3A
Q
rr
3.8
5.7
nC di/dt
= 100A/
μ
s
Notes
through
are on page 10
2
Decem
ber 19, 2014
IRLML6344TRPbF
100
10
1
100
10
1
VGS
10V
VGS
10V
TOP
TOP
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
BOTTOM
BOTTOM
1.4V
1.4V
1
≤
60
μ
s PULSE WIDTH
≤
60
μ
s PULSE
WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
10
2.0
1.5
1.0
0.5
I
= 5.0A
D
V
= 4.5V
GS
T
= 150°C
J
1
T
= 25°C
V
J
= 15V
DS
≤
60
μ
s PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
December 19, 2014
IRLML6344TRPbF
14.0
12.0
10.0
8.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I =
5.0A
D
V
= 24V
= 15V
= 6.0V
C
C
C
+ C
, C
SHORTED
ds
DS
iss
gs
gd
= C
V
rss
oss
gd
= C
+ C
DS
V
ds
gd
DS
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
10
0.0
4.0
8.0
12.0
16.0
20.0
1
10
, Drain-to-Source Voltage (V)
100
Q ,
Total Gate Charge (nC)
V
G
DS
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1msec
T
= 150°C
J
100
μ
sec
1
T
= 25°C
0.1
0.01
J
T
= 25°C
A
Tj = 150°C
Single Pulse
10msec
10
V
= 0V
1.0
GS
0.1
0.1
1
100
0.4
0.5
V
0.6
0.7
0.8
0.9
1.1
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
Decem
ber 19, 2014
IRLML6344TRPbF
5.0
4.0
3.0
2.0
1.0
0.0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
Fig 9.
Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b.
Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
0.01
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
December 19, 2014
IRLML6344TRPbF
70
60
50
40
30
20
10
80
60
40
20
0
I
= 5.0A
D
Vgs = 2.5V
T
= 125°C
J
Vgs = 4.5V
T
= 25°C
J
0
1
2
3
4
5
6
7
8
9
10 11 12
0
10
20
30
40
I ,
Drain Current (A)
D
V
Gate -to -Source Voltage
(V)
GS,
Fig 13.
Typical On-Resistance Vs. Drain
Fig 12.
Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
6
Decem
ber 19, 2014
IRLML6344TRPbF
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
I
I
= 10
μ
A
D
D
= 250
μ
A
1E-005 0.0001
0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75
100 125 150
Time (sec)
T ,
Temperature ( °C )
J
Fig 16.
Typical Power Vs. Time
Fig 15.
Typical Threshold Voltage Vs.
Junction Temperature
7
December 19, 2014
IRLML6344TRPbF
Micro3
™
(SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
H
4
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENS
I
O
NS ARE SHOWN IN M
I
L
LIMETERS [INCHES].
3. CONTROLL
I
N
G DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. D
I
M
ENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. D
I
M
ENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR
I
N
T
ERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. D
I
M
ENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3
™
(SOT-23) Part Marking Information
Note
s
: T
h
is part m
a
r
king inform
a
t
i
o
n app
l
i
e
s to dev
i
c
es p
r
o
duced after
0
2
/
26/2001
DATE CODE MARKING INSTRUCTIONS
DAT E
CODE
P
A
R
T NUMBER
LE
A
D
F
REE
WW =
(1-26) IF PRE
C
E
D
E
D BY L
A
S T
D
I
G
I
T
O
F CA
L
E
N
DAR Y
E
A
R
WO
R
K
WE E K
Y
E
A
R
Y
W
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
Cu W
I
RE
H
A
L
O
G
E
N FREE
L
O
T CO
D
E
X =
P
A
R
T NUMBER
C
O
D
E REFERE
N
C
E
:
A=
I
RL
M
L
2
402
B = IRL
M
L
2803
C =
IRL
M
L
6302
D =
IRL
M
L
5103
E =
I
R
L
M
L
6402
F =
IRL
M
L
6
401
G =
I
R
L
M
L
2502
H =
I
R
L
M
L
5
203
S = IRL
M
L
6
244
T = I
R
L
M
L
6246
U =
IRL
M
L
6
344
V=
I
RL
M
L
6346
W =
IRF
M
L
8
244
X =
IRL
M
L
2
244
Y =
IRL
M
L
2
246
Z = IRF
M
L
9244
24
25
26
X
Y
Z
WW =
(27-52) IF PR
E
C
E
DED BY
A
LETTER
WO
R
K
I
= I
R
L
M
L
0030
Y
E
A
R
Y
WE E K
W
J =
IRL
M
L
2
030
K = IRL
M
L
0100
L =
IRL
M
L
0
060
M=
I
RL
M
L
0
040
N =
I
R
L
M
L
2
060
P =
I
R
L
M
L
9301
R = IRL
M
L
9303
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
Note: A
l
ine
a
b
ove the wo
r
k
w
eek
(as s
hown he
r
e
)
i
n
d
i
c
ates
L
e
ad – F
r
ee.
K
50
51
52
X
Y
Z
8
Decem
ber 19, 2014
IRLML6344TRPbF
Micro3
™
(SOT-23)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
9
December 19, 2014
IRLML6344TRPbF
Q
u
a
lification information
†
Consumer
††
(per JEDEC JESD47F
†††
guidelines )
Qualification level
MSL1
Mois
t
u
re S
e
n
sitivity Level
RoHS c
o
m
p
l
i
a
nt
M
i
c
r
o
3
™
(SOT-23)
(
p
e
r I
P
C/JEDEC J-STD-020D
†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
Please contact your International Rectifier sales representative for further information:
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
Revision History
Date
Comment
•
•
•
Formatted the data sheet using the IR Corporate template.
Updated part marking on page 8.
12/19/2014
Corrected Typical Output curve Fig.2 on page 3 (used to be exact same as Fig.1)
10
Decem
ber 19, 2014
