Infineon-Technologies-IRLML9303TRPBF
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PD – 97519B
IRLML9303TRPbF
HEXFET
®
Power MOSFET
V
DS
-30
V
V
V
GS Max
± 20
R
DS(on) max
(@V
GS
= -10V)
165
270
m
R
DS(on) max
(@V
GS
= -4.5V)
TM
m
Micro3 (SOT-23)
IRLML9303TRPbF
Application(s)
System/Load Switch
Features and Benefits
Features
Benefits
Industry-standard pinout
Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
results in
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
V
DS
-30
-2.3
-1.8
-12
Drain-Source Voltage
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
A
Pulsed Drain Current
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
1.25
0.80
0.01
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
V
GS
Gate-to-Source Voltage
T
J,
T
STG
-55 to
+ 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
R
JA
Junction-to-Ambient
Junction-to-Ambient (t<10s)
ORDERING INFORMATION:
°C/W
R
JA
–––
99
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
1
03/09/12
IRLML9303TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
2.3
–––
-3.7
135
220
–––
–––
–––
–––
–––
21
–––
V
V
GS
= 0V, I
D
= -250
μ
A
V
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
––– mV/°C
Reference to 25°C, I
D
= -1mA
165
270
-2.4
1.0
V
GS
= -10V, I
D
= -2.3A
V
GS
= -4.5V, I
D
= -1.8A
V
DS
= V
GS
, I
D
= -10
μ
A
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
GS(th)
I
DSS
V
V
DS
= -24V, V
GS
= 0V
Drain-to-Source Leakage Current
μ
A
150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
V
GS
= -20V
GS
= 20V
nA
V
R
G
gfs
Q
g
–––
2.0
0.57
1.2
7.5
14
S
V
DS
= -10V, I
D
=-2.3A
I
D
= -2.3A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
V
DS
=-15V
nC
ns
V
GS
= -4.5V
V
DD
=-15V
Rise Time
I
D
= -1.0A
t
d(off)
t
f
Turn-Off Delay Time
9.0
8.6
160
39
R
G
= 6.8
Fall Time
V
GS
= -4.5V
C
iss
C
oss
C
rss
Input Capacitance
V
GS
= 0V
Output Capacitance
pF
V
DS
= -25V
Reverse Transfer Capacitance
25
ƒ = 1.0KHz
Source – Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max.
Units
Conditions
MOSFET symbol
I
S
D
S
–––
–––
–––
-1.3
(Body Diode)
showing the
integral reverse
A
G
I
SM
Pulsed Source Current
–––
-12
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
12
-1.2
18
V
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
Reverse Recovery Time
Reverse Recovery Charge
ns T
J
= 25°C, V
R
= -24V, I
F
=-1.3A
di/dt = 100A/
μ
s
nC
Q
rr
5.3
8.0
2
IRLML9303TRPbF
100
10
100
10
VGS
-10V
VGS
-10V
60
μ
s PULSE WIDTH
Tj = 150°C
60
μ
s PULSE WIDTH
Tj = 25°C
TOP
TOP
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
BOTTOM
BOTTOM
1
1
-2.5V
0.1
0.01
0.1
0.01
-2.5V
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
-V ,
Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
10
1.6
1.4
1.2
1.0
0.8
0.6
I
= -2.3A
D
V
= -10V
GS
T
= 150°C
J
1
T
= 25°C
J
V
= -15V
DS
60
μ
s PULSE WIDTH
0.1
1
2
3
4
5
6
7
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
-V ,
Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
3
IRLML9303TRPbF
1000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
-2.3A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
= C
+ C
V
V
V
= -24V
= -15V
= -6.0V
DS
DS
DS
ds
gd
C
iss
C
C
oss
100
6.0
rss
4.0
2.0
10
0.0
1
10
-V ,
Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
Q
, Total
Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
μ
sec
1msec
T
= 150°C
J
10msec
1
T
= 25°C
J
DC
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.01
0.1
1
10
100
-V ,
Source-to-Drain Voltage (V)
-V ,
Drain-to-Source Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRLML9303TRPbF
R
D
V
DS
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
D.U.T.
R
G
–
V
DD
+
-V
GS
Pulse Width
µs
Duty Factor
Fig 10a.
Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
Fig 9.
Maximum Drain Current vs.
90%
Ambient Temperature
V
DS
Fig 10b.
Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRLML9303TRPbF
500
600
500
400
300
200
100
0
I
= -2.3A
D
400
300
200
100
0
Vgs = -4.5V
T
J
= 125°C
J
Vgs = -10V
T
= 25°C
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
-I ,
Drain Current (A)
D
-V
Gate -to -Source Voltage
(V)
GS,
Fig 13.
Typical On-Resistance vs.
Fig 12.
Typical On-Resistance vs.
Drain Current
Gate Voltage
Id
Vds
Vgs
L
VCC
DUT
0
20K
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 14b.
Gate Charge Test Circuit
Fig 14a.
Gate Charge Waveform
6
IRLML9303TRPbF
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1000
800
600
400
200
0
I
= -10
μ
A
D
-75 -50 -25
0
25 50 75
100 125 150
1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
T
, Temperature ( °C )
Time (sec)
J
Fig 16.
Typical Power vs. Time
Fig 15.
Typical Threshold Voltage vs.
Junction Temperature
7
IRLML9303TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
4
H
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. D
I
M
ENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. D
I
M
ENS
I
O
NS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR
I
NTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. D
I
M
ENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
DATE CODE MARKING INSTRUCTIONS
8
IRLML9303TRPbF
Micro3
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
8.3 ( .326 )
3.45 ( .136 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
9
IRLML9303TRPbF
Orderable part number
Package Type
Micro3 (SOT-23)
Standard Pack
Note
Form
Tape and Reel
Quantity
IRLML9303TRPbF
3000
Qualification information
†
Cons ume
r
††
(per
J
E
D
E C JE S D47F
†††
g
u
i
d
e
l
i
n
es )
Qualification le
v
e
l
MS
L
1
Moisture Sensiti
v
i
ty Le
v
e
l
RoHS compliant
Micro3 (SOT-23)
(per
I
P
C
/
J
E DE C J-S T D-020D
†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
400
μ
s; duty cycle
2%.
Surface mounted on 1 in square Cu board.
Refer to
application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
