Infineon-Technologies-IRLR8256TRPBF
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PD – 96208A
IRLR8256PbF
IRLU8256PbF
Applications
HEXFET
®
Power MOSFET
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
V
DSS
R
DS(on)
max
Qg
5.7m
25V
10nC
D
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
S
S
D
G
G
D-Pak
I-Pak
l
Lead-Free
IRLR8256PbF
IRLU8256PbF
l
RoHS compliant
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
25
Units
V
DS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
81
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
@ T
C
= 25°C
@ T
C
= 100°C
D
D
57
A
325
63
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@T
C
= 25°C
D
D
W
@T
C
= 100°C
31
Linear Derating Factor
Operating Junction and
0.42
-55 to
+ 175
W/°C
T
J
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
2.4
Units
Junction-to-Case
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
50
°C/W
110
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 11
1
08/02/11
IRLR/U8256PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
BV
DSS
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
81
–––
–––
V
V
GS
= 0V, I
D
= 250
μ
A
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
ΔΒ
V
DSS
/
Δ
T
J
18
––– mV/°C
Reference to 25°C, I
D
= 1mA
4.2
6.7
1.8
-7.2
–––
–––
–––
5.7
8.5
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
= 20A
R
DS(on)
V
GS(th)
Static Drain-to-Source On-Resistance
m
Ω
2.35
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 25
μ
A
Δ
Δ
V
GS(th)
/ T
J
I
DSS
I
GSS
––– mV/°C
Gate Threshold Voltage Coefficient
1.0
μ
A
V
V
DS
= 20V, V
GS
= 0V
Drain-to-Source Leakage Current
150
DS
= 20V, V
GS
= 0V, T
J
= 125°C
100
nA
V
GS
= 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– -100
V
GS
= -20V
gfs
Q
g
–––
10
–––
15
S
V
DS
= 13V, I
D
= 20A
–––
–––
–––
–––
–––
–––
–––
Q
gs1
2.3
1.6
3.6
2.6
5.1
9.0
–––
–––
–––
–––
–––
–––
V
DS
= 13V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Q
gs2
Q
gd
nC
V
GS
= 4.5V
I
D
= 20A
Q
godr
See Fig. 16
Q
sw
Q
oss
nC V
DS
= 16V, V
GS
= 0V
R
G
t
d(on)
t
r
Gate Resistance
–––
–––
–––
–––
–––
2.5
9.7
46
Ω
3.9
–––
V
DD
= 13V, V
GS
= 4.5V
Turn-On Delay Time
–––
–––
–––
I
D
= 20A
ns
Rise Time
t
d(off)
t
f
12
R =
1.8
Ω
Turn-Off Delay Time
G
8.5
See Fig. 14
Fall Time
C
iss
C
oss
C
rss
––– 1470 –––
V
GS
= 0V
Input Capacitance
–––
–––
453
185
–––
–––
V
DS
= 13V
pF
Output Capacitance
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
Units
mJ
A
E
AS
86
20
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
6.3
mJ
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
S
MOSFET symbol
Continuous Source Current
–––
––– 81
(Body Diode)
showing the
integral reverse
A
I
SM
Pulsed Source Current
–––
–––
325
(Body Diode)
p-n junction diode.
V
SD
–––
–––
–––
–––
19
1.0
29
26
V
T =
25°C, I
= 20A, V
= 0V
Diode Forward Voltage
J S GS
t
rr
ns T
= 25°C, I
= 20A, V
DD
= 13V
Reverse Recovery Time
J
F
Q
rr
di/dt = 250A/
μ
s
17
nC
Reverse Recovery Charge
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
2
IRLR/U8256PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM
BOTTOM
1
2.5V
1
60
μ
s PULSE WIDTH
Tj = 175°C
≤
2.5V
60
μ
s PULSE WIDT
≤
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 25A
D
V
= 10V
GS
100
10
1
T
= 175°C
J
T =
25°C
J
V
= 15V
DS
≤
60
μ
s PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
3
IRLR/U8256PbF
5.0
4.0
3.0
2.0
1.0
0.0
10000
V
= 0V,
= C
f = 1 MHZ
GS
I =
20A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
V
V
= 20V
= 13V
= C
DS
DS
rss
oss
gd
= C
+ C
ds
gd
C
iss
1000
C
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
8
9 10
11 12 13
Q , Total
Gate Charge (nC)
V
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100
μ
sec
T =
175°C
J
1msec
10msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
0
1
10
100
V
, Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRLR/U8256PbF
90
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
Limited By Package
I
= 25
μ
A
D
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75
100 125 150 175
T
, Case Temperature (°C)
T ,
Temperature ( °C )
C
J
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
Ri (°C/W)
τ
i (sec)
0.1
0.01
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
0.02
0.01
0.04252 0.000007
0.57953 0.000109
1.17480 0.001003
0.60472 0.005976
τ
τ
J
τ
J
τ
C
1
τ
1
Ci=
τ
i
/
Ri
τ
τ
τ
2
τ
2
3
τ
3
4
τ
4
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRLR/U8256PbF
15V
400
350
300
250
200
150
100
50
I
D
TOP
5.57A
8.50A
DRIVER
+
L
V
DS
BOTTOM 20A
D.U.T
AS
R
G
V
DD
–
I
A
2
V
G
S
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
I
AS
R
D
Fig 12b.
Unclamped Inductive Waveforms
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
Current Regulator
Same Type as D.U.
T
.
V
GS
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
50K
Ω
.2
μ
F
12V
.3
μ
F
Fig 14a.
Switching Time Test Circuit
+
V
DS
V
D.U.
T
.
DS
–
90%
V
GS
3mA
10%
I
I
D
G
V
GS
Current Sampling Resistors
t
t
r
t
t
f
d(on)
d(off)
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms
6
IRLR/U8256PbF
Driver Gate Drive
P
.
W.
Period
D.U.T
Period
D =
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16.
Gate Charge Waveform
7
IRLR/U8256PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RFR120
P
A
R
T NU
M
B
ER
W
I
T H
A
S S
E
M
B
LY
L
O
T CO
D
E 1234
A
S
SE
M
B
LED
O
N WW 1
6
, 2001
IN THE
A
S
SE
M
B
LY LINE “
A
”
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
IFIER
L
O
GO
D
A
T
E
C
O
D
E
Y
E
A
R 1 =
2
001
W
E
EK 16
IRFR120
116A
12
34
LINE A
Note: “P”
i
n
a
s
s
e
mb
l
y li
n
e
p
o
s
i
t
i
o
n
AS S E MB L Y
L
O
T CODE
i
n
dicates “
L
e
ad
–
Fr
e
e”
“P” in
a
s
s
e
mb
l
y line
p
o
s
i
tion indicates
“L
e
ad
–
Fr
e
e” qua
l
ifi
c
at
i
o
n to the cons ume
r
-l
e
vel
P
A
R
T NU
M
B
ER
D
A
T
E
C
ODE
P =
DESI
G
N
A
T
ES LE
A
D
–
F
REE
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
IFIER
OR
IRFR120
12 34
L
O
GO
P =
DESI
G
N
A
T
ES LE
A
D
–
F
REE
PR
O
D
U
C
T Q
U
A
L
IFIED
T
O
T
H
E
CON
S
U
M
E
R LE
V
E
L
(
O
P
TI
O
NA
L
)
AS S E MB L Y
L
O
T CODE
Y
E
A
R 1 =
2
001
W
E
E K
16
A =
A
S S
E
M
B
L
Y S IT E
C
ODE
8
IRLR/U8256PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
P
A
R
T NU
M
B
ER
EX
A
M
P
LE: THIS
IS
A
N
I
R
F
U
120
I
N
T
ER
N
A
T
I
O
NAL
W
I
T H
A
S S
E
M
B
LY
DAT E
CODE
Y
E
A
R 1 =
2
001
WE E K
1
9
RE
C
T
I
F
I
ER
L
O
GO
IRFU
1
20
119A
78
L
O
T CODE 5
6
78
A
S
SE
M
B
LED
O
N WW
1
9, 2001
IN
T
HE
A
S
SE
M
B
LY LINE “
A
”
56
LI
N
E A
A
S
SE
M
B
LY
L
O
T CODE
Note: “P” in
a
s
s
e
mb
l
y lin
e
p
o
s
i
tion
in
d
i
c
ates L
ead-F
r
e
e”
OR
P
A
R
T NU
M
B
ER
DAT E
CODE
P =
DE S I
G
N
A
T E S
L
E
A
D
–
F R E E
PR
O
D
U
C
T
(
OP
T
I
O
NA
L
)
I
N
T
ER
N
A
T
I
ONAL
RE
C
T
IFIER
L
O
GO
IRFU
1
20
56 78
Y
E
A
R 1 =
2
001
A
S
SE
M
B
LY
L
O
T CO
D
E
W
E
EK
1
9
A=
A
S
SE
M
B
LY
SITE
C
ODE
9
IRLR/U8256PbF
D-Pak (TO-252AA)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
IRLR/U8256PbF
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
75
IRLR8256PBF
IRLR8256TRPBF
D-PAK
D-PAK
Tape and Reel
2000
IRLR8256PBF
I-PAK
Tube/Bulk
75
Qualification Information
†
Industrial
††
(per JEDEC JESD47F
†††
guidelines)
Qualification level
Comments: This family of products has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
MSL
1
D-PAK
(per JEDEC J-STD-020D
†††
)
Moisture Sensitivity Level
RoHS Compliant
Not app
l
i
c
ab
l
e
I-PAK
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher
qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L =
0.43
mH, R
G
= 25
Ω
, I
AS
= 20A.
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 50A.
ꢀ
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-790
11
