Infineon-Technologies-IRLR8259TRPBF
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PD – 97360
IRLR8259PbF
IRLU8259PbF
Applications
HEXFET
®
Power MOSFET
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
V
DSS
R
DS(on)
max
Qg
8.7m
25V
Ω
6.8nC
D
Benefits
S
S
D
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
G
G
D-Pak
I-Pak
IRLR8259PbF
IRLU8259PbF
l
Lead-Free
l
RoHS compliant
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
25
Units
V
V
DS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
± 20
57
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
@ T
C
= 25°C
@ T
C
= 100°C
D
D
40
A
230
48
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@T
C
= 25°C
W
D
D
@T
C
= 100°C
24
Linear Derating Factor
Operating Junction and
0.32
-55 to
+ 175
W/°C
°C
T
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
3.15
50
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Ambient (PCB Mount)
–––
°C/W
Junction-to-Ambient
–––
110
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
ꢀ
are on page 11
1
12/16/08
IRLR/U8259PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
25
–––
–––
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
∆Β
V
DSS
/
∆
T
J
R
DS(on)
–––
–––
–––
18
––– mV/°C
Reference to 25°C, I
D
= 1mA
6.3
8.7
V
GS
= 10V, I
D
= 21A
V
GS
= 4.5V, I
D
= 17A
V
DS
= V
GS
, I
D
= 25µA
m
Ω
10.6 12.9
V
GS(th)
1.35 1.90 2.35
V
Gate Threshold Voltage
∆
V
GS(th)
/
∆
T
J
I
DSS
–––
–––
–––
–––
–––
55
-7.1
–––
–––
–––
––– mV/°C
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.0
µA
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
150
I
GSS
100
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– -100
V
GS
= -20V
gfs
Q
g
–––
6.8
1.5
1.1
2.4
1.8
3.5
5.9
–––
10
S
V
DS
= 13V, I
D
= 17A
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
–––
–––
–––
–––
–––
–––
V
DS
= 13V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
nC V
GS
= 4.5V
I
D
= 17A
See Fig. 16
nC V
DS
= 16V, V
GS
= 0V
R
G
t
d(on)
Gate Resistance
–––
–––
–––
–––
–––
–––
–––
–––
2.2
8.4
38
3.6
–––
–––
–––
–––
–––
–––
–––
Ω
V
DD
= 13V, V
GS
= 4.5V
Turn-On Delay Time
t
r
I
D
= 17A
ns
Rise Time
t
d(off)
t
f
9.1
8.9
900
300
110
R
G
= 1.8
Ω
See Fig. 14
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
V
V
GS
= 0V
Input Capacitance
DS
= 13V
pF
Output Capacitance
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
67
17
Units
mJ
A
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
4.8
mJ
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
S
–––
–––
MOSFET symbol
Continuous Source Current
56
(Body Diode)
showing the
integral reverse
A
I
SM
–––
–––
Pulsed Source Current
230
(Body Diode)
p-n junction diode.
V
SD
–––
–––
–––
–––
17
1.0
26
23
V
T =
25°C, I
= 17A, V
= 0V
Diode Forward Voltage
J S GS
t
rr
ns T
= 25°C, I
= 17A, V
DD
= 13V
Reverse Recovery Time
J
F
Q
rr
di/dt = 200A/µs
15
nC
Reverse Recovery Charge
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
2
IRLR/U8259PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM
BOTTOM
2.5V
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 21A
D
V
= 10V
GS
100
10
1
T
= 175°C
J
T
= 25°C
V
J
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
3
IRLR/U8259PbF
10000
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
17A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
V
V
= 20V
= 13V
= C
DS
DS
rss
oss
gd
= C
+ C
ds
gd
C
C
1000
iss
oss
C
rss
V
100
1
10
, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
8
Q ,
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 175°C
J
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1
0.1
0.0
0.5
1.0
1.5
2.0
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRLR/U8259PbF
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
0
Limited By Package
I
= 25µA
D
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75
100 125 150 175
T
, Case Temperature (°C)
T ,
Temperature ( °C )
J
C
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
Ri (°C/W)
τ
i (sec)
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
0.1
0.01
0.02
0.01
0.08148 0.000017
0.88089 0.000107
1.48814 0.001018
0.69949 0.006290
τ
τ
J
τ
J
τ
C
1
τ
1
Ci=
τ
i
/
Ri
τ
τ
τ
2
τ
2
3
τ
3
4
τ
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRLR/U8259PbF
15V
300
250
200
150
100
50
I
D
TOP
4.2A
6.4A
DRIVER
+
L
V
DS
BOTTOM 17A
D.U.T
AS
R
G
V
DD
–
I
A
V
2
GS
0.01
Ω
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
I
AS
R
D
Fig 12b.
Unclamped Inductive Waveforms
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
Current Regulator
Same Type as D.U.
T
.
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
50K
Ω
.2
µ
F
12V
.3
µ
F
Fig 14a.
Switching Time Test Circuit
+
V
DS
V
DS
D.U.
T
.
–
90%
V
GS
3mA
10%
I
I
D
G
V
GS
Current Sampling Resistors
t
t
r
t
t
f
d(on)
d(off)
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms
6
IRLR/U8259PbF
Driver Gate Drive
P
.
W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16.
Gate Charge Waveform
7
IRLR/U8259PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
8
IRLR/U8259PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
25
9
IRLR/U8259PbF
D-Pak (TO-252AA)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
IRLR/U8259PbF
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Tape and
Reel
Quantity
75
IRLR8259PBF
IRLR8259TRPBF
D-PAK
D-PAK
2000
IRLU8259PBF
I-PAK
Tube/Bulk
75
Qualification information
†
Qualification level
Industrial††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Moisture Sensitivity Level
RoHS compliant
D-PAK
MS L
1
(per JEDEC J-ST
D-020D
Not app
l
i
c
ab
l
e
Yes
†††
)
I-PAK
Qualification standards can be found at International Rectifiers web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L =
0.48
mH, R
G
= 25
Ω
, I
AS
= 17A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 42A.
ꢀ
When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-790
11
