Infineon-Technologies-IRLTS6342TRPBF
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PD – 97730
IRLTS6342PbF
HEXFET
®
Power MOSFET
V
DS
V
GS
30
12
V
V
±
D
1
2
3
6
5
4
D
D
R
DS(on) max
(@V
GS
= 4.5V)
R
DS(on) max
(@V
GS
= 2.5V)
Q
g (typical)
I
D
17.5
m
Ω
Ω
D
22.0
11
m
G
S
nC
A
TSOP-6
8.3
(@T
A
= 25°C)
Applications
•
System/Load Switch
Feature
s
a
n
d
B
enefits
Features
Resulting Benefits
Industry-Standard TSOP-6 Package
Multi-Vendor Compatibility
⇒
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Note
Quantity
3000
IRLTS6342TRPBF
TSOP-6
Absolute Maximum Ratings
Max.
30
Parameter
Drain-to-Source Voltage
Units
V
DS
V
±12
Gate-to-Source Voltage
V
GS
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
8.3
6.7
64
I
I
I
@ T
A
= 25°C
D
D
A
@ T
A
= 70°C
DM
2.0
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
D
D
W
W/°C
°C
1.3
Power Dissipation
0.02
Linear Derating Factor
Operating Junction and
-55 to
+ 150
T
T
J
Storage Temperature Range
STG
Notes
through
are on page 2
1
9/27/11
IRLTS6342PbF
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
V
GS
= 0V, I
D
= 250
μ
A
Reference to 25°C, I
D
= 1mA
Parameter
Min.
Typ.
–––
23
Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
17.5
22.0
1.1
V
ΔΒ
V
DSS
/
Δ
T
J
R
DS(on)
Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.5
mV/°C
V
GS
= 4.5V, I
D
= 8.3A
V
GS
= 2.5V, I
D
= 6.7A
DS
= V
GS
, I
D
= 10
μ
A
14.0
17.5
–––
-4.3
–––
–––
–––
–––
–––
11
Static Drain-to-Source On-Resistance
Ω
m
V
GS(th)
V
Gate Threshold Voltage
V
Δ
I
DSS
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
25
–––
1.0
mV/°C
V
DS
= 24V, V
GS
= 0V
μ
A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
GS
= 12V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
GS
= -12V
V
DS
= 10V, I
D
= 6.4A
gfs
Q
g
V
V
GS
= 4.5V
DS
= 15V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs
Q
gd
R
G
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
0.5
4.6
2.2
5.4
11
I
D
= 6.4A
Ω
V
DD
= 15V, V
GS
= 4.5V
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
I
D
= 6.4A
ns
R
G
= 6.8
Ω
See Figs. 18
Turn-Off Delay Time
Fall Time
32
15
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
1010
96
V
DS
= 25V
pF
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
70
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max. Units
D
S
I
S
MOSFET symbol
Continuous Source Current
–––
–––
2.0
showing the
(Body Diode)
A
G
I
SM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
64
V
SD
T =
25°C, I
= 8.3A, V
= 0V
Diode Forward Voltage
1.2
V
J
S
GS
t
rr
T =
25°C, I
= 6.4A, V
DD
= 24V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
13
20
ns
J
F
Q
rr
di/dt = 100/
μ
s
5.8
8.7
nC
Thermal Resistance
Typ.
Max.
Parameter
Junction-to-Ambient
Units
°C/W
–––
62.5
R
θ
JA
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
When mounted on 1 ich square copper board.
R
is measured at
T
J
of approximately 90°C.
θ
2
IRLTS6342PbF
100
10
1
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
2.5V
2.0V
1.7V
1.6V
1.5V
1.4V
4.5V
2.5V
2.0V
1.7V
1.6V
1.5V
1.4V
BOTTOM
BOTTOM
1
1.4V
0.1
0.01
1.4V
60
μ
s PULSE WIDTH
Tj = 25°C
≤
60
μ
s PULSE WIDTH
Tj = 150°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 8.3A
D
V
= 4.5V
GS
T
= 150°C
J
10
1
T
= 25°C
V
J
= 15V
DS
≤
60
μ
s PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
T
0
20 40 60 80
10
0
1
20 140 160
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 3.
Typical Transfer Characteristics
14
10000
V
= 0V,
= C
f = 1 MHZ
GS
I =
6.4A
D
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= C
+ C
ds
gd
1000
100
10
C
iss
6
C
oss
4
C
rss
2
0
0
5
10
15
20
25
30
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
3
IRLTS6342PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
1msec
T
= 25°C
100
μ
sec
J
10
10msec
DC
= 25°C
1
T
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.1
1.0
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8.0
6.0
4.0
2.0
0.0
I
I
I
= 10
μ
A
D
D
D
= 250
μ
A
= 1.0mA
25
50
75
100
125
150
-75 -50 -25
0
25 50 75
100 125 150
T
, Ambient Temperature (°C)
T ,
Temperature ( °C )
A
J
Fig 9.
Maximum Drain Current vs.
Fig 10.
Threshold Voltage vs. Temperature
Ambien
t
T
emperature
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
IRLTS6342PbF
45
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
I
= 8.0A
D
Vgs = 2.5V
T
= 125°C
= 25°C
J
Vgs = 4.5V
T
5
J
1
2
3
4
6
7
8
9
10 11 12
0
10
20
30
40
50
I ,
Drain Current (A)
V
Gate -to -Source Voltage
(V)
D
GS,
Fig 13.
Typical On-Resistance vs. Drain Current
Fig 12.
On-Resistance vs. Gate Voltage
100
16000
90
80
70
60
50
40
30
20
10
0
I
D
TOP
0.9A
1.5A
BOTTOM 6.4A
12000
8000
4000
0
25
50
75
100
125
150
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Starting T
, Junction Temperature (°C)
Time (sec)
J
Fig 15.
Typical Power vs. Time
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
–
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
5
IRLTS6342PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 17b.
Gate Charge Waveform
Fig 17a.
Gate Charge Test Circuit
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
I
Ω
0.01
t
AS
p
Fig 18b.
Unclamped Inductive Waveforms
Fig 18a.
Unclamped Inductive Test Circuit
R
D
V
DS
V
DS
90%
V
GS
D.U.T.
R
G
+
V
DD
–
10%
V
GS
V
GS
Puls
e
W
idth
≤ 1
µs
Dut
y
F
acto
r
≤ 0.1
t
d(on)
t
d(off)
t
r
t
f
Fig 19a.
Switching Time Test Circuit
Fig 19b.
Switching Time Waveforms
6
IRLTS6342PbF
TSOP-6 Package
Outline
TSOP-6 Part
Marking Information
W=
(
1-26)
IF PRE
C
E
D
E
D BY L
A
S
T
D
I
G
IT OF CA
L
E
N
DAR Y
E
A
R
WO
R
K
WE
E
K
YE
A
R
Y
W
Y =
YE
A
R
W =
W
E E K
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
P
A
R
T
N
U
M
B
ER
L
O
T
CODE
T
O
P
24
25
26
X
Y
Z
P
A
R
T
N
U
M
B
ER
C
ODE
R
EFERE
N
C
E
:
A= S
I
3443DV
B =
IRF5800
C =
IR F 5850
D =
IRF5851
E =
IRF5852
F = IRF5801
G =
IRF5803
H =
IRF5804
I =
IRF5805
J =
IRF5806
K =
IRF5810
N =
IRF5802
O =
IRL
T
S
6
342
T
RPBF
P =
IRFTS8342TRPBF
R =
IRFTS
9
342
T
RPBF
S = IRL
T
S
2
242
T
R
PBF
W =
(27-52) IF PRE
C
E
D
E
D BY ALETTER
WO
R
K
YE
A
R
Y
WE
E
K
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
K
50
51
X
Y
Note: A
l
i
n
e above the wo
r
k
w
eek
(
a
s
s
h
own here) indicates
L
e
ad
–
Fr
e
e.
7
IRLTS6342PbF
TSOP-
6
T
ape & Reel Information
Qualification information
†
Cons ume
r
††
(
p
er
J
E
D
E
C JES
D
47F
†††
g
u
i
d
e
l
ines )
MS L 1
(
p
er
J
E
D
E
C J-
S
T
D
-020D
†††
Qualification level
Moisture Sensitivity Level
RoHS compliant
TSOP-6
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
†††
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
