Infineon-Technologies-ISP75DP06LM
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ISP75DP06LM
MOSFET
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
SOT-223-4
Features
4
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
ꢀ@ꢀ
V
GS
=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
•ꢀLogicꢀLevel
•ꢀEnhancementꢀmode
1
2
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
3
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 2, 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
Source
Pin 3
V
DS
-60
V
R
DS(on),max
I
D
750
m
Ω
A
-1.1
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISP75DP06LM
PG-SOT223
75DP06LM
–
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
V
GS
=-10ꢀV,ꢀ
T
A
=25ꢀ°C,
R
THJA
=70ꢀ°C/W
Continuous drain current
1)
I
D
–
–
-1.1
A
V
GS
=-10ꢀV,ꢀ
T
A
=100ꢀ°C,
R
THJA
=70ꢀ°C/W
V
GS
=-4.5ꢀV,ꢀ
T
A
=25ꢀ°C,
R
THJA
=70ꢀ°C/W
V
GS
=-4.5ꢀV,ꢀ
T
A
=100ꢀ°C,
R
THJA
=70ꢀ°C/W
–
–
–
–
–
–
-0.7
-1.0
-0.6
Continuous drain current
1)
I
D
A
Pulsed drain current
2)
Avalanche energy, single pulse
3)
I
D,pulse
E
AS
–
–
–
–
-4.4
36
A
T
A
=25ꢀ°C
–
mJ
V
I
D
=-1.1ꢀA,ꢀ
R
GS
=25ꢀ
Ω
Gate source voltage
V
GS
-20
20
–
–
–
–
–
4.2
1.8
T
S
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
THJA
=70ꢀ°C/W
1)
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – soldering
point
R
thJS
R
thJA
–
–
–
30
°C/W –
°C/W –
Device on PCB,
–
70
6 cm² cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
-1
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=-250ꢀµA
V
DS
=
V
GS
,ꢀ
I
D
=-77ꢀµA
-1.5
-2
–
–
-0.1
-10
-1
-100
V
DS
=-60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=-60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
-10
-100
V
GS
=-20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
621
748
750
1000
V
GS
=-10ꢀV,ꢀ
I
D
=-1.1ꢀA
V
GS
=-4.5ꢀV,ꢀ
I
D
=-1ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
–
–
75
–
–
Ω
–
Transconductance
1.8
S
|
V
DS
|
≥
2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=-1.1ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
120
19
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
pF
pF
pF
V
GS
=0ꢀV,ꢀ
V
DS
=-30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=-30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=-30ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
Reverse transfer capacitance
5
V
DD
=-30ꢀV,ꢀ
V
GS
=-10ꢀV,ꢀ
I
D
=-1.1ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
3
–
–
–
–
ns
ns
ns
ns
V
DD
=-30ꢀV,ꢀ
V
GS
=-10ꢀV,ꢀ
I
D
=-1.1ꢀA,
R
G,ext
=1.6ꢀ
Ω
5
V
DD
=-30ꢀV,ꢀ
V
GS
=-10ꢀV,ꢀ
I
D
=-1.1ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
40
14
V
DD
=-30ꢀV,ꢀ
V
GS
=-10ꢀV,ꢀ
I
D
=-1.1ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Typ.
-0.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=-30ꢀV,ꢀ
I
D
=-1.1ꢀA,ꢀ
V
GS
=0ꢀtoꢀ-10ꢀV
V
DD
=-30ꢀV,ꢀ
I
D
=-1.1ꢀA,ꢀ
V
GS
=0ꢀtoꢀ-10ꢀV
V
DD
=-30ꢀV,ꢀ
I
D
=-1.1ꢀA,ꢀ
V
GS
=0ꢀtoꢀ-10ꢀV
V
DD
=-30ꢀV,ꢀ
I
D
=-1.1ꢀA,ꢀ
V
GS
=0ꢀtoꢀ-10ꢀV
V
DD
=-30ꢀV,ꢀ
I
D
=-1.1ꢀA,ꢀ
V
GS
=0ꢀtoꢀ-10ꢀV
V
DD
=-30ꢀV,ꢀ
I
D
=-1.1ꢀA,ꢀ
V
GS
=0ꢀtoꢀ-10ꢀV
V
DD
=-30ꢀV,ꢀ
V
GS
=0ꢀV
Q
g(th)
Q
gd
-0.2
-1.1
Q
sw
-1.3
Gate charge total
Q
g
-4.0
Gate plateau voltage
Output charge
V
plateau
Q
oss
-3.4
-1.3
nC
1)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-1.1
-4.4
-1.2
–
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
A
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
A
=25ꢀ°C
Diode forward voltage
-0.9
23
V
V
GS
=0ꢀV,ꢀ
I
F
=-1.1ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=-30ꢀV,ꢀ
I
F
=-1.1ꢀA,ꢀd
i
F
/d
t
=-100ꢀA/µs
V
R
=-30ꢀV,ꢀ
I
F
=-1.1ꢀA,ꢀd
i
F
/d
t
=-100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Q
rr
-27
–
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
T
A
[°C]
T
A
[°C]
P
tot
=f(
T
A
)
I
D
=f(
T
A
);ꢀ|
V
GS
|
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
1
10
2
1 µs
0.5
100 µs
10
0
10
-1
10
-2
10
-3
0.2
10
1
1 ms
0.1
10 ms
100 ms
DC
0.05
0.02
0.01
10
0
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
A
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJA
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
5
1500
-10 V
-5 V
4
-3 V
-2.8 V
-4.5 V
-3.5 V
1250
1000
750
3
-4 V
-4 V
2
-4.5 V
-5 V
-3.5 V
1
-10 V
-3 V
-2.8 V
0
500
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
2.4
-V
DS
ꢀ[V]
-I
D
ꢀ[A]
I
D
=f(
V
DS
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
3
2000
25 °C
150 °C
1750
1500
2
1
0
150 °C
1250
1000
750
25 °C
500
250
0
1
2
3
4
5
4
5
6
7
8
9
10
-V
GS
ꢀ[V]
-V
GS
ꢀ[V]
I
D
=f(
V
GS
),ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
R
DS(on)
=f(
V
GS
),ꢀ
I
D
=-1.1ꢀA;ꢀparameter:ꢀ
T
j
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.00
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.75
1.50
1.25
1.00
-770 µA
-77 µA
-75
-50
-25
0
25
50
75
100 125 150
-75
-50
-25
0
25
50
75
100 125 150
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
),ꢀ
I
D
=-1.1ꢀA,ꢀ
V
GS
=-10ꢀV
V
GS(th
=f(
T
j
),ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
3
10
1
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
10
2
10
0
10
-1
10
-2
Coss
10
1
Crss
10
0
0
10
20
30
40
50
60
0.00
0.25
0.50
0.75
1.00
1.25
1.50
-V
DS
ꢀ[V]
-V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
1
10
-12 V
-30 V
-48 V
8
6
4
2
0
10
0
25 °C
100 °C
10
-1
125 °C
10
-2
10
0
10
1
10
2
10
3
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
t
AV
ꢀ[µs]
-Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j,start
V
GS
=f(
Q
gate
),ꢀ
I
D
=-1.1ꢀAꢀpulsed,ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
70
65
60
55
-75
-50
-25
0
25
50
75
100 125 150
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=-250ꢀµA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-03-25
OptiMOS
TM
ꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP75DP06LM
RevisionꢀHistory
ISP75DP06LM
Revision:ꢀ2019-03-25,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-03-25
Trademarks
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©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-03-25
