Infineon-Technologies-ISZ040N03L5IS
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ISZ040N03L5IS
MOSFET
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
TSDSON-8ꢀFL
(enlarged source interconnection)
Features
•ꢀOptimizedꢀSyncFETꢀforꢀhighꢀperformanceꢀbuckꢀconverter
•ꢀIntegratedꢀmonolithicꢀSchottky-likeꢀdiode
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
ꢀ@ꢀ
V
GS
=4.5ꢀV
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
6 D
5 D
Parameter
Value
Unit
V
DS
30
V
R
DS(on),max
I
D
4.0
40
m
Ω
A
Q
OSS
12
nC
nC
Q
G
(0V..10V)
17
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TSDSON-8 FL
Marking
RelatedꢀLinks
ISZ040N03L5IS
40N03LI
–
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
–
–
–
–
40
40
40
40
18
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
1)
Pulsed drain current
2)
I
D,pulse
I
AS
–
–
–
–
–
160
20
A
T
C
=25ꢀ°C
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
–
A
T
C
=25ꢀ°C
E
AS
V
GS
–
20
mJ
V
I
D
=20ꢀA,ꢀ
R
GS
=25ꢀ
Ω
-20
20
–
–
–
–
–
37
2.1
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJC
R
thJA
–
–
–
–
3.4
K/W
K/W
K/W
–
–
–
Thermal resistance, junction – case,
top
–
–
20
60
Device on PCB,
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
V
GS
=0ꢀV,ꢀ
I
D
=10ꢀmA
mV/K
I
D
=10ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C
Min.
Max.
Drain-source breakdown voltage
V
(BR)DSS
30
–
V
Breakdown voltage temperature
coefficient
d
V
(BR)DSSꢀ
/d
T
j
–
V
GS(th)
1.2
I
DSS
15
–
–
Gate threshold voltage
2
V
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
–
1
0.5
–
V
DS
=24ꢀV,ꢀ
V
GS
=0ꢀV
V
DS
=24ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
mA
nA
m
Ω
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
4.6
3.3
5.7
4.0
V
GS
=4.5ꢀV,ꢀ
I
D
=30ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA
R
DS(on)
Gate resistance
R
G
g
fs
–
0.9
82
–
–
Ω
–
Transconductance
41
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1100
460
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
pF
pF
pF
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
Reverse transfer capacitance
64
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
3.3
4.4
16
–
–
–
–
ns
ns
ns
ns
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
3.0
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Typ.
2.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
Q
g(th)
Q
gd
1.7
2.9
Q
sw
4.1
Gate charge total
Q
g
8.5
Gate plateau voltage
Gate charge total
V
plateau
Q
g
2.7
17
nC
nC
nC
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
6.8
12
V
DD
=15ꢀV,ꢀ
V
GS
=0ꢀV
1)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
37
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
Q
rr
–
160
0.7
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.56
2
V
V
GS
=0ꢀV,ꢀ
I
F
=3ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=15ꢀV,ꢀ
I
F
=
I
S
,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
50
40
30
20
10
0
30
20
10
0
0
40
80
120
160
0
40
80
120
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
10
2
10
1
10
0
10
-1
0.5
10 µs
10
0
0.2
100 µs
0.1
1 ms
0.05
10 ms
DC
0.02
10
-1
0.01
single pulse
10
-2
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
10
5 V
10 V
140
4.5 V
8
120
100
80
60
40
20
0
3.2 V
6
4
2
0
3.5 V
4 V
3.2 V
4.5 V
5 V
7 V
8 V
3 V
10 V
2.8 V
0
1
2
3
0
10
20
30
40
50
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
160
200
140
120
100
80
160
120
80
40
0
60
40
150 °C
20
25 °C
0
0
1
2
3
4
5
0
40
80
120
160
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
6
2.5
5
2.0
1.5
1.0
0.5
0.0
4
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=30ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=10ꢀmA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
-55 °C
25 °C
125 °C
150 °C
10
2
10
1
10
0
10
-1
Ciss
10
3
10
2
10
1
Coss
Crss
0
10
20
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
12
15 V
24 V
10
8
6 V
25 °C
10
1
100 °C
125 °C
6
10
0
4
2
10
-1
0
10
0
10
1
10
2
10
3
0
5
10
15
20
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=30ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀTyp.ꢀdrain-sourceꢀleakageꢀcurrent
Diagram Gate charge waveforms
10
-2
10
-3
125 °C
10
-4
100 °C
75 °C
10
-5
10
-6
25 °C
10
-7
0
5
10
15
20
25
V
DS
ꢀ[V]
I
DSS
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
m
j
DOCUMENT NO.
Z8B00158553
MILLIMETERS
DIMENSIONS
REVISION
MIN.
0.90
0
MAX.
1.10
0.05
0.44
03
A
A1
b
SCALE
10:1
0.24
c
(0.20)
D
3.20
2.19
1.54
3.20
2.01
0.10
3.40
2.39
1.74
3.40
2.21
0.30
2 mm
0
1
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
0.65
0.06
L
0.30
0.40
0.50
0.50
0.70
0.70
L1
L2
aaa
ISSUE DATE
04.03.2020
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
ISZ040N03L5IS
RevisionꢀHistory
ISZ040N03L5IS
Revision:ꢀ2020-03-16,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2020-03-16
Trademarks
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improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
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informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-03-16
