Infineon-Technologies-ISZ0501NLS
| Part # | Infineon-Technologies-ISZ0501NLS |
Download  | Infineon-Technologies-ISZ0501NLS |
ISZ0501NLS
MOSFET
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
TSDSON-8ꢀFL
(enlarged source interconnection)
Features
•ꢀOptimizedꢀforꢀchargerꢀapplications
•ꢀVeryꢀLowꢀFOM
QOSS
ꢀforꢀHighꢀFrequencyꢀSMPS
•ꢀLowꢀFOM
SW
ꢀforꢀHighꢀFrequencyꢀSMPS
•ꢀExcellentꢀgateꢀchargeꢀxꢀ
R
DS(on)
ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
ꢀ@ꢀ
V
GS
=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
•ꢀN-channel
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
S 2
S 3
G 4
8 D
7 D
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
6 D
5 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
V
DS
25
V
R
DS(on),max
I
D
3.1
40
m
Ω
A
Q
OSS
9.1
6.3
nC
nC
Q
G
(0V..4.5V)
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TSDSON-8 FL
Marking
RelatedꢀLinks
ISZ0501NLS
0501NL
–
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
–
–
–
–
40
40
40
40
19
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
1)
Pulsed drain current
2)
I
D,pulse
I
AS
–
–
–
–
–
160
20
A
T
C
=25ꢀ°C
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
–
A
T
C
=25ꢀ°C
E
AS
V
GS
–
20
mJ
V
I
D
=20ꢀA,ꢀ
R
GS
=25ꢀ
Ω
-16
16
–
–
–
30
2.1
–
–
T
C
=25ꢀ°C
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
Power dissipation
P
tot
W
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJA
–
4.1
K/W
K/W
–
–
Device on PCB,
–
–
60
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
25
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
–
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
1.2
2
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
0.1
10
1
100
V
DS
=20ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=20ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
3.2
2.6
3.9
3.1
V
GS
=4.5ꢀV,ꢀ
I
D
=20ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
–
0.75
93
–
–
Ω
–
Transconductance
46
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
910
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
pF
pF
pF
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
390
Reverse transfer capacitance
38
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
3
–
–
–
–
ns
ns
ns
ns
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
3
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
15
2
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Typ.
2.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
Q
g(th)
Q
gd
1.5
1.4
Q
sw
2.3
Gate charge total
Q
g
6.3
Gate plateau voltage
Gate charge total
V
plateau
Q
g
2.5
13.6
5.9
nC
nC
nC
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
9.1
V
DD
=12ꢀV,ꢀ
V
GS
=0ꢀV
1)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
30
160
1
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
Q
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.82
12
V
V
GS
=0ꢀV,ꢀ
I
F
=20ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=15ꢀV,ꢀ
I
F
=30A,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery charge
–
nC
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
45
40
35
30
25
20
15
10
5
10 V
4.5 V
30
20
10
0
0
0
40
80
120
160
0
40
80
120
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀparameter:ꢀ
V
GS
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
0.5
10
2
10 µs
10
0
0.2
0.1
0.05
0.02
100 µs
1 ms
10
1
10 ms
DC
10
-1
0.01
10
0
single pulse
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
300
5
250
3.5 V
10 V
4
4.5 V
4 V
200
4.5 V
5 V
3
5 V
6 V
7 V
8 V
10 V
3.5 V
150
3.2 V
2
1
0
100
50
0
3 V
2.8 V
0
1
2
3
0
10
20
30
40
50
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
200
250
160
120
80
200
150
100
50
40
150 °C
25 °C
0
0
0
1
2
3
4
5
0
40
80
120
160
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
5
2.5
4
2.0
1.5
1.0
0.5
0.0
3
typ
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=20ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
150 °C
Ciss
10
3
10
2
10
1
10
2
10
1
10
0
Coss
Crss
0
5
10
15
20
25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
12
12 V
20 V
10
8
5 V
25 °C
10
1
6
100 °C
125 °C
4
2
10
0
0
10
0
10
1
10
2
10
3
0
5
10
15
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=30ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
28
27
26
25
24
23
22
21
20
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
TSDSON-8-25/-26
m
j
MILLIMETERS
DIM
INCHES
MIN
0.90
0.24
0.10
0.24
3.20
2.19
1.54
0.21
3.20
2.01
0.10
MAX
1.10
0.44
0.30
0.44
3.40
2.39
1.74
0.41
3.40
2.21
0.30
MIN
MAX
0.043
0.017
0.012
0.017
0.134
0.094
0.069
0.016
0.134
0.087
0.012
A
b
0.035
0.009
0.004
0.009
0.126
0.086
0.061
0.008
0.126
0.079
0.004
b1
b2
D=D1
D2
D3
D4
E
DOCUMENT NO.
Z8B00158553
0
E4
E6
e
SCALE
0.65 (BSC)
0.026 (BSC)
8
2.5
N
8
0
2.5
L
0.30
0.40
0.50
0.51
0.70
0.70
0.012
0.016
0.020
0.020
L1
L2
aaa
F1
F2
F3
F4
F5
F6
F7
F8
F9
0.028
0.028
5mm
0.25
3.90
2.29
0.31
0.34
0.80
1.00
2.51
1.64
0.50
0.010
0.154
0.090
0.012
0.013
0.031
0.039
0.099
0.065
0.020
EUROPEAN PROJECTION
ISSUE DATE
27-12-2010
REVISION
02
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-12-20
OptiMOS
TMꢀ
5ꢀPower-MOSFET,ꢀ25ꢀV
ISZ0501NLS
RevisionꢀHistory
ISZ0501NLS
Revision:ꢀ2019-12-20,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-12-20
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2019ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-12-20
