Infineon-Technologies-SGP15N120
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SGP15N120
SGW15N120
Fast IGBT in NPT-technology
C
•
40% lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
μ
s
•
Designed for:
G
E
– Motor controls
– Inverter
– SMPS
•
NPT-Technology offers:
– very tight parameter distribution
– high ruggedness, temperature stable behaviour
– parallel switching capability
PG-TO-220-3-1
PG-TO-247-3
•
Qualified according to JEDEC
1
for target applications
•
Pb-free lead plating; RoHS compliant
Type
V
CE
I
C
E
off
T
j
Marking
Package
SGP15N120
SGW15N120
1200V
1200V
15A
15A
1.5mJ
1.5mJ
GP15N120 PG-TO-220-3-1
SGW15N120 PG-TO-247-3
150
°
C
150
°
C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
V
C
E
I
C
1200
V
A
30
15
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
I
C
puls
–
52
52
Gate-emitter voltage
V
G
E
E
A
S
V
±
20
Avalanche energy, single pulse
I
C
= 15A,
V
CC
= 50V,
R
GE
= 25
Ω
, start at
T
j
= 25
°
C
Short circuit withstand time
2
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
85
mJ
t
S
C
10
μ
s
W
P
t
ot
198
T
C
= 25
°
C
Operating junction and storage temperature
T
j
,
T
s
tg
-55…+150
260
°
C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
–
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
t
hJC
0.63
K/W
Thermal resistance,
junction – ambient
R
t
hJA
PG-TO-220-3-1
PG-TO-247-3
62
40
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
BR)CES
V
G
E
=
0V,
I
C
=
1000
μ
A
1200
–
–
V
Collector-emitter saturation voltage
V
C
E(sat)
V
G
E
=
1
5V,
I
C
=
15A
2.5
–
3.1
3.7
3.6
4.3
T
j
=
25
°
C
T
j
=
150
°
C
Gate-emitter threshold voltage
V
G
E(th)
I
C
ES
3
4
5
I
C
=
600
μ
A
,
V
C
E
=
V
G
E
V
C
E
=1200V,V
G
E
=0V
T
j
=
25
°
C
Zero gate voltage collector current
μ
A
–
–
–
–
200
800
T
j
=
150
°
C
Gate-emitter leakage current
Transconductance
I
G
ES
g
f
s
V
C
E
=0V,
V
G
E
=20V
V
C
E
=
20V,
I
C
=
15A
–
–
100
–
nA
S
11
Dynamic Characteristic
Input capacitance
C
i
ss
V
C
E
=
25V,
–
–
–
–
1250
100
65
1500 pF
120
V
GE
=
0V,
Output capacitance
C
o
ss
C
r
ss
f
=
1MHz
Reverse transfer capacitance
Gate charge
80
Q
G
ate
V
C
C
=
960V,
I
C
=
15A
V
G
E
=
15V
130
175
nC
nH
A
Internal emitter inductance
L
E
PG-TO-220-3-1
PG-TO-247-3
–
–
7
–
–
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
13
I
C
(SC)
145
V
G
E
=
15V,
t
S
C
≤
5
μ
s
100V
≤
V
C
C
≤
1
200V,
T
j
≤
1
50
°
C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
t
d
(on)
t
r
t
d
(off)
t
f
–
–
–
–
–
–
–
18
23
24
30
ns
T
j
=
25
°
C
,
CC
=
800V,
I
C
=
15A,
V
V
G
E
=
15V/0V,
Turn-off delay time
Fall time
580
22
750
29
R
G
=
33
Ω
,
L
σ
1
)
=
180nH,
C
σ
1
)
=
40pF
Turn-on energy
Turn-off energy
Total switching energy
E
o
n
E
o
ff
E
t
s
1.1
0.8
1.9
1.5
1.1
2.6
mJ
Energy losses include
“tail” and
diode
reverse recovery.
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
t
d
(on)
t
r
t
d
(off)
t
f
–
–
–
–
–
–
–
38
30
46
36
ns
T
j
=
150
°
C
V
C
C
=
800V,
I
C
=
15A,
Rise time
Turn-off delay time
Fall time
652
31
780
37
V
GE
=
15V/0V,
R
G
=
33
Ω
,
L
σ
1
)
=
180nH,
C
σ
1
)
=
40pF
Turn-on energy
Turn-off energy
Total switching energy
E
o
n
E
o
ff
E
t
s
1.9
1.5
3.4
2.3
2.0
4.3
mJ
Energy losses include
“tail” and diode
reverse recovery.
1)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E.
3
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
70A
60A
50A
40A
30A
20A
10A
0A
100A
10A
1A
I
c
t
p
=2
μ
s
15
μ
s
50
μ
s
T
C
=80°C
200
μ
s
T
C
=110°C
1ms
I
c
DC
0.1A
1V
10V
100V
1000V
10Hz
100Hz
1kHz
10kHz
100kHz
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
150
°
C)
(
T
j
≤
150
°
C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 33
Ω
)
35A
30A
25A
20A
15A
10A
5A
200W
175W
150W
125W
100W
75W
50W
25W
0W
25°C
0A
25°C
50°C
75°C 100°C
125°C
50°C
75°C
100°C 125°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
Figure 4. Collector current as a function of
case temperature
(
T
j
≤
150
°
C)
(
V
GE
≤
15V,
T
j
≤
150
°
C)
4
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
50A
40A
30A
20A
10A
0A
50A
40A
30A
20A
10A
0A
V
G
E
=17V
15V
13V
11V
9V
V
G
E
=17V
15V
13V
11V
9V
7V
7V
0V
1V
2V
3V
4V
5V
6V
7V
0V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(
T
j
= 25
°
C)
(
T
j
= 150
°
C)
50A
6V
5V
40A
30A
20A
10A
0A
I
C
=30A
4V
3V
2V
1V
0V
I
C
=15A
T
J
=+150°C
T
J
=+25°C
T
J
=-40°C
I
C
=7.5A
3V
5V
7V
9V
11V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
–
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
(
V
CE
= 20V)
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
5
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
1000ns
100ns
10ns
1000ns
100ns
10ns
t
d(off)
t
d(off)
t
d(on)
t
d(on)
t
f
t
r
t
f
t
r
0
Ω
25
Ω
50
Ω
0A
10A
20A
30A
40A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
=
3
3
Ω
,
dynamic test circuit in Fig.E )
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 15A,
dynamic test circuit in Fig.E )
6V
5V
4V
3V
2V
1V
0V
1000ns
t
d(off)
max.
typ.
100ns
min.
t
d(on)
t
r
t
f
10ns
-50°C
0°C
50°C
100°C
150°C
-50°C
0°C
50°C
100°C
150°C
T
j
,
JUNCTION TEMPERATURE
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.3mA)
V
GE
= +15V/0V,
I
C
= 15A,
R
G
=
3
3
Ω
,
dynamic test circuit in Fig.E )
6
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
14mJ
12mJ
10mJ
8mJ
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
*)
E
on
and
E
ts
include losses
due to
diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
E
ts
*
E
ts
*
E
on
*
E
on
*
6mJ
E
off
4mJ
E
off
2mJ
0mJ
0
Ω
25
Ω
50
Ω
75
Ω
0A
10A
20A
30A
40A
50A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
=
3
3
Ω
,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 15A,
dynamic test circuit in Fig.E )
4mJ
*)
E
on
and
E
ts
include losses
due to
diode recovery.
D
=0.5
E
ts
*
0.2
3mJ
2mJ
1mJ
0mJ
10
-1
K/W
0.1
0.05
E
on
*
R
, ( K / W )
τ
,
( s )
0.67774
0.11191
0.00656
0.00069
0.02
0.01
0.09751
0.29508
0.13241
0.10485
10
-2
K/W
E
off
R
1
R
2
10
-3
K/W
single pulse
C
1
=
τ
1
/
R
1
C
2
=
τ
2
/
R
2
-50°C
0°C
50°C
100°C
150°C
1µs
10µs 100µs 1ms
10ms 100ms
1s
t
p
,
PULSE WIDTH
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
V
GE
= +15V/0V,
I
C
= 15A,
R
G
=
3
3
Ω
,
dynamic test circuit in Fig.E )
7
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
20V
15V
10V
5V
C
iss
1nF
U
CE
=960V
100pF
C
oss
C
rss
0V
0nC
50nC
100nC
150nC
0V
10V
20V
30V
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 17. Typical gate charge
(
I
C
= 15A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
30
μ
s
300A
250A
200A
150A
100A
50A
20
μ
s
10
μ
s
0
μ
s
0A
10V
10V
11V
12V
13V
14V
15V
12V
14V
16V
18V
20V
V
GE
,
GATE
–
EMITTER VOLTAGE
V
GE
,
GATE
–
EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(
V
CE
= 1200V, start at
T
j
= 25
°
C)
(100V
≤
V
CE
≤
1200V,
T
C
= 25
°
C,
T
j
≤
150
°
C)
8
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
PG-TO220-3-1
9
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
PG-TO247-3
10
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
i,v
t
=t
+
t
S F
di /dt
r r
F
Q
=Q
+
Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10%
I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90%
I
Figure C. Definition of diodes
switching characteristics
τ
1
τ
2
τ
n
r
1
r
2
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L
σ
=180nH,
and stray capacity
C
σ
=40pF.
11
Rev. 2.5
Febr. 08
Power Semiconductors
SGP15N120
SGW15N120
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2/14/08.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
12
Rev. 2.5
Febr. 08
Power Semiconductors
