Infineon-Technologies-SKB02N120
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SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
Allowed number of short circuits: <1000; time between
short circuits: >1s.
C
lower
E
off
compared to previous generation
Short circuit withstand time – 10
s
G
E
Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
NPT-Technology offers:
– very tight parameter distribution
– high ruggedness, temperature stable behaviour
– parallel switching capability
PG-TO-263-3-2
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Type
V
CE
I
C
E
off
T
j
Marking
Package
SKB02N120
1200V
2A
0.11mJ
K02N120 PG-TO-263-3-2
150
C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
C
V
C E
I
C
1200
V
A
6.2
2.8
T
C
= 100
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150
C
I
C
p ul s
–
9.6
9.6
Diode forward current
I
F
4.5
2
T
C
= 25
C
T
C
= 100
C
Diode pulsed current,
t
p
limited by
T
jmax
I
F
p ul s
V
G E
t
S
C
9
Gate-emitter voltage
V
20
10
Short circuit withstand time
2
V
GE
= 15V, 100V
V
CC
1200V,
T
j
150
C
Power dissipation
s
P
t
o
t
62
W
T
C
= 25
C
Operating junction and storage temperature
Soldering temperature, reflow soldering, MSL1
T
j
,
T
s
tg
-55…+150
260
C
T
s
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.4
12.06.2013
SKB02N120
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
t
h
JC
2.0
4.5
K/W
Diode thermal resistance,
junction – case
R
t
h
JC D
Electrical Characteristic,
at
T
j
= 25
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
B
R )C ES
1200
–
–
V
V
G E
=
0V,
I
C
=
100
A
Collector-emitter saturation voltage
V
C
E
( sat )
V
G E
=
1
5V,
I
C
=2A
T
j
=25
C
2.5
–
3.1
3.7
3.6
4.3
T
j
=150
C
Diode forward voltage
V
F
V
G E
=
0V,
I
F
=
2A
T
j
=25
C
2.0
2.5
5
–
1.75
T
j
=150
C
Gate-emitter threshold voltage
V
G
E
( t h)
I
C
E S
3
4
I
C
=
100
A
,
V
C E
=
V
G
E
V
C E
=
1200V,
V
G E
=
0V
T
j
=25
C
Zero gate voltage collector current
A
–
–
–
–
25
100
T
j
=150
C
Gate-emitter leakage current
Transconductance
I
G
E S
g
f
s
V
C E
=
0V,
V
G E
=20V
V
C E
=
20V,
I
C
=2A
–
–
100
–
nA
S
1.5
Dynamic Characteristic
Input capacitance
C
i
s
s
V
C E
=
25V,
V
G E
=
0V,
–
–
–
–
205
28
250
34
15
–
pF
Output capacitance
C
o
s s
C
r
s s
f
=
1MHz
Reverse transfer capacitance
Gate charge
12
Q
G
at e
V
C C
=
960V,
I
C
=2A
V
G E
=
15V
11
nC
nH
A
Internal emitter inductance
L
E
–
–
7
–
–
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
I
C
( SC )
24
V
G E
=
15V,
t
S
C
1
0
s
100V
V
C
C
1
200V,
T
j
1
50
C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4
12.06.2013
SKB02N120
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
t
d
( o n)
t
r
t
d
( of f)
t
f
–
–
–
–
–
–
–
23
16
30
21
ns
T
j
=25
C
,
V
C C
=
800V,
I
C
=
2
A,
V
G E
=
15V/0V,
R
G
=
91
,
Turn-off delay time
Fall time
260
61
340
80
L
1 )
=180nH,
C
1
)
=
40pF
Turn-on energy
Turn-off energy
Total switching energy
E
o n
E
o
f
f
E
t s
0.16
0.06
0.22
0.21
0.08
0.29
mJ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r
r
t
S
–
–
–
–
–
–
50
ns
T
j
=25
C
,
V
R
=
800V,
I
F
=
2A,
di
F
/
dt
=250A/
s
t
F
Diode reverse recovery charge
Q
r
r
0.10
4.2
C
A
Diode peak reverse recovery current
I
r
r m
Diode peak rate of fall of reverse
recovery current during
t
F
di
r
r
/
dt
400
A/
s
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
t
d
( o n)
t
r
t
d
( of f)
t
f
–
–
–
–
–
–
–
26
14
31
ns
T
j
=150
C
V
C C
=
800V,
I
C
=2A,
17
Turn-off delay time
Fall time
290
85
350
102
0.33
0.15
0.48
V
G E
=
15V/0V,
R
G
=
91
,
L
1 )
=180nH,
C
1
)
=
40pF
Turn-on energy
Turn-off energy
Total switching energy
E
o n
E
o
f
f
E
t s
0.27
0.11
0.38
mJ
ns
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r
r
t
S
–
–
–
–
–
–
90
T
j
=150
C
V
R
=
800V,
I
F
=
2A,
di
F
/
dt
=300A/
s
t
F
Diode reverse recovery charge
Q
r
r
0.30
6.7
C
A
Diode peak reverse recovery current
I
r
r m
Diode peak rate of fall of reverse
recovery current during
t
F
di
r
r
/
dt
110
A/
s
1)
Leakage inductance L
and stray capacity C
due to dynamic test circuit in figure E.
3
Rev. 2.4
12.06.2013
SKB02N120
I
c
12A
10A
8A
10A
1A
t
p
=10
s
50
s
T
C
=80°C
150
s
500
s
6A
T
C
=110°C
4A
0.1A
0.01A
20ms
DC
I
c
2A
0A
10Hz
1V
10V
100V
1000V
100Hz
1kHz
10kHz
100kHz
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
C,
T
j
150
C)
(
T
j
150
C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 91
)
7A
6A
5A
4A
3A
2A
1A
0A
60W
50W
40W
30W
20W
10W
0W
25°C
50°C
75°C
100°C 125°C
25°C
50°C
75°C
100°C 125°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
Figure 4. Collector current as a function of
case temperature
(
T
j
150
C)
(
V
GE
15V,
T
j
150
C)
4
Rev. 2.4
12.06.2013
SKB02N120
7A
6A
5A
4A
3A
2A
1A
0A
7A
6A
5A
4A
3A
2A
1A
0A
V
GE
=17V
15V
13V
11V
9V
V
GE
=17V
15V
13V
11V
9V
7V
7V
0V
1V
2V
3V
4V
5V
6V
7V
0V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(
T
j
= 25
C)
(
T
j
= 150
C)
7A
6A
5A
6V
5V
I
C
=4A
4V
T
j
=+150°C
T
j
=+25°C
4A
3A
2A
1A
0A
I
C
=2A
3V
T
j
=-40°C
I
C
=1A
2V
1V
0V
-50°C
3V
5V
7V
9V
11V
0°C
50°C
100°C
150°C
V
GE
,
GATE
–
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
(
V
CE
= 20V)
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
5
Rev. 2.4
12.06.2013
SKB02N120
t
d(off)
t
d(off)
t
f
100ns
t
f
100ns
t
d(on)
t
d(on)
t
r
t
r
10ns
10ns
0
50
100
150
0A
2A
4A
6A
8A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
=
9
1
,
dynamic test circuit in Fig.E )
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 2A,
dynamic test circuit in Fig.E)
6V
5V
t
d(off)
max.
100ns
4V
3V
2V
1V
0V
t
f
typ.
min.
t
d(on)
t
r
10ns
-50°C
0°C
50°C
100°C
150°C
-50°C
0°C
50°C
100°C
150°C
T
j
,
JUNCTION TEMPERATURE
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.3mA)
V
GE
= +15V/0V,
I
C
= 2A,
R
G
=
9
1
,
dynamic test circuit in Fig.E )
6
Rev. 2.4
12.06.2013
SKB02N120
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
E
ts
*
E
ts
*
E
on
*
E
on
*
E
off
E
off
0
50
100
150
0A
2A
4A
6A
8A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
=
9
1
,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 2A,
dynamic test circuit in Fig.E )
0.4mJ
*)
E
on
and
E
ts
include losses
due to diode recovery.
E
ts
*
D
=0.5
10
0
K/W
0.3mJ
0.2
0.1
E
on
*
0.2mJ
0.05
10
-1
K/W
R
, ( K / W )
0.66735
0.70472
0.62778
,
( s )
0.04691
0.00388
0.00041
0.02
0.01
0.1mJ
E
off
R
1
R
2
10
-2
K/W
single pulse
C
1
=
1
/
R
1
C
2
=
2
/
R
2
0.0mJ
-50°C
0°C
50°C
100°C
150°C
1µs
10µs 100µs 1ms
10ms 100ms
1s
t
p
,
PULSE WIDTH
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
V
GE
= +15V/0V,
I
C
= 2A,
R
G
=
9
1
,
dynamic test circuit in Fig.E )
7
Rev. 2.4
12.06.2013
SKB02N120
20V
15V
10V
5V
C
iss
100pF
U
CE
=960V
C
oss
C
rss
30V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
0V
0nC
10pF
0V
5nC
10nC
15n
10V
20V
Q
GE
,
GATE CHARGE
Figure 17. Typical gate charge
(
I
C
= 2A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
30
s
40A
30A
20A
10A
0A
25
s
20
s
15
s
10
s
5
s
0
s
10V
11V
12V
13V
14V
15V
10V
12V
14V
16V
18V
20V
V
GE
,
GATE
–
EMITTER VOLTAGE
V
GE
,
GATE
–
EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(
V
CE
= 1200V, start at
T
j
= 25
C)
(100V
V
CE
1200V,
T
C
= 25
C,
T
j
150
C)
8
Rev. 2.4
12.06.2013
SKB02N120
250ns
200ns
150ns
100ns
50ns
0.4µC
0.3µC
0.2µC
0.1µC
0.0µC
I
F
=2A
I
F
=1A
I
F
=2A
I
F
=1A
0ns
100A/
s
200A/
s
300A/
s
400A/
s
100A/
s
200A/
s
300A/
s
400A/
s
di
F
/
dt
,
DIODE CURRENT SLOPE
di
F
/
dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 800V,
T
j
= 150
C,
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 800V,
T
j
= 150
C,
dynamic test circuit in Fig.E )
dynamic test circuit in Fig.E )
400A/
s
10A
8A
I
F
=2A
300A/
s
I
F
=1A
I
F
=1A
6A
4A
2A
0A
I
F
=2A
200A/
s
100A/
s
0A/
s
100A/
s
200A/
s
300A/
s
400A/
s
100A/
s
200A/
s
300A/
s
400A/
s
di
F
/
dt
,
DIODE CURRENT SLOPE
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 800V,
T
j
= 150
C,
dynamic test circuit in Fig.E )
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 800V,
T
j
= 150
C,
dynamic test circuit in Fig.E )
9
Rev. 2.4
12.06.2013
SKB02N120
7A
6A
5A
4A
3A
2A
1A
0A
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
I
F
=4A
T
J
=150°C
I
F
=2A
I
F
=1A
T
J
=25°C
0V
1V
2V
3V
4V
0°C
40°C
80°C
120°C
V
F
,
FORWARD VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as
a function of forward voltage
Figure 26. Typical diode forward voltage as
a function of junction temperature
D
=0.5
0.2
10
0
K/W
0.1
0.05
R
, ( K / W )
0.10109
0.99478
1.07923
1.94890
,
( s )
0.38953
0.04664
0.00473
0.00066
10
-1
K/W
R
1
R
2
single pulse
C
1
=
1
/
R
1
C
2
=
2
/
R
2
10
-2
K/W
1µs
10µs 100µs 1ms
10ms 100ms
1s
t
p
,
PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
10
Rev. 2.4
12.06.2013
SKB02N120
PG-TO263-3-2
11
Rev. 2.4
12.06.2013
SKB02N120
i,v
t
=t
+
t
S F
di /dt
r r
F
Q
=Q
+
Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10%
I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90%
I
Figure C. Definition of diodes
switching characteristics
1
2
n
r
1
r
2
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L
=180nH,
and stray capacity
C
=40pF.
12
Rev. 2.4
12.06.2013
SKB02N120
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
13
Rev. 2.4
12.06.2013
