Infineon-Technologies-SKW30N60
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SKW30N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
C
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
s
G
Designed for:
E
– Motor controls
– Inverter
NPT-Technology for 600V applications offers:
– very tight parameter distribution
– high ruggedness, temperature stable behaviour
– parallel switching capability
PG-TO-247-3
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Type
V
CE
I
C
V
CE(sat
)
T
j
Marking
Package
SKW30N60
600V
30A
2.5V
K30N60 PG-TO-247-3
150
C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
C
V
C E
I
C
600
V
A
41
30
T
C
= 100
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
600V,
T
j
150
C
Diode forward current
T
C
= 25
C
I
C
p ul s
–
112
112
I
F
41
30
T
C
= 100
C
Diode pulsed current,
t
p
limited by
T
jmax
I
F
p ul s
V
G E
t
S
C
112
20
10
Gate-emitter voltage
V
Short circuit withstand time
2
V
GE
= 15V,
V
CC
600V,
T
j
150
C
Power dissipation
s
P
t
o
t
250
260
W
T
C
= 25
C
Soldering temperature
T
s
°C
C
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Operating junction and storage temperature
T
j
,
T
s
tg
-55…+150
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_3
12.06.2013
SKW30N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
t
h
JC
R
t
h
JC D
R
t
h
JA
0.5
1
K/W
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
40
Electrical Characteristic,
at
T
j
= 25
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
B
R )C ES
600
–
–
V
V
G E
=
0V,
I
C
=
500
A
Collector-emitter saturation voltage
V
C
E
( sat )
V
G E
=
1
5V,
I
C
=
30A
T
j
=25
C
1.7
–
2.1
2.5
2.4
3.0
T
j
=150
C
Diode forward voltage
V
F
V
G E
=
0V,
I
F
=
30A
T
j
=25
C
1.2
–
1.4
1.8
1.25
1.65
T
j
=150
C
Gate-emitter threshold voltage
V
G
E
( t h)
I
C
E S
3
4
5
I
C
=
700
A
,
V
C E
=
V
G
E
V
C E
=
600V,
V
G
E
=
0V
T
j
=25
C
Zero gate voltage collector current
A
–
–
–
–
40
3000
T
j
=150
C
Gate-emitter leakage current
Transconductance
I
G
E S
g
f
s
V
C E
=
0V,
V
G E
=20V
V
C E
=
20V,
I
C
=
30A
–
–
–
100
–
nA
S
20
Dynamic Characteristic
Input capacitance
C
i
s
s
V
C E
=
25V,
V
G E
=
0V,
f
=
1MHz
–
–
–
–
1600
150
92
1920 pF
180
Output capacitance
C
o
s s
C
r
s s
Reverse transfer capacitance
Gate charge
110
Q
G
at e
V
C C
=
480V,
I
C
=30A
V
G E
=
15V
140
182
nC
nH
A
Internal emitter inductance
L
E
–
–
13
–
–
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C
( SC )
300
V
G E
=
15V,
t
S
C
1
0
s
V
C C
6
00V,
T
j
1
50
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2_3
12.06.2013
SKW30N60
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
T
j
=25
C
,
V
C C
=
400V,
I
C
=
30A,
V
G E
=
0/15V,
t
d
( o n)
t
r
t
d
( of f)
t
f
–
–
–
–
–
–
–
44
34
53
40
ns
mJ
ns
Turn-off delay time
Fall time
291
58
349
70
R
G
=11
,
1 )
L
=
180nH,
1)
C
=
900pF
Turn-on energy
E
o n
E
o
f
f
E
t s
0.64
0.65
1.29
0.77
0.85
1.62
Energy losses include
“tail” and diode
reverse recovery.
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r
r
t
S
–
–
–
–
–
–
400
32
–
–
–
–
–
–
T
j
=25
C
,
V
R
=
200V,
I
F
=
30A,
di
F
/
dt
=200A/
s
t
F
368
610
5.5
180
Diode reverse recovery charge
Q
r
r
nC
A
Diode peak reverse recovery current
I
r
r m
Diode peak rate of fall of reverse
recovery current during
t
b
di
r
r
/
dt
A/
s
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
T
j
=150
C
V
C C
=
400V,
I
C
=
30A,
V
G E
=
0/15V,
t
d
( o n)
t
r
t
d
( of f)
t
f
–
–
–
–
–
–
–
44
34
53
40
ns
Turn-off delay time
Fall time
324
67
389
80
R
G
=
1
1
,
1 )
L
=
180nH,
1)
C
=
900pF
Turn-on energy
E
o n
E
o
f
f
E
t s
0.98
0.92
1.90
1.18
1.19
2.38
mJ
ns
Energy losses include
“tail” and diode
reverse recovery.
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r
r
t
S
–
–
–
–
–
–
520
56
–
–
–
–
–
–
T
j
=150
C
V
R
=
200V,
I
F
=
30A,
di
F
/
dt
=200A/
s
t
F
464
1740
9.0
Diode reverse recovery charge
Q
r
r
nC
A
Diode peak reverse recovery current
I
r
r m
Diode peak rate of fall of reverse
recovery current during
t
b
di
r
r
/
dt
200
A/
s
1)
Leakage inductance
L
a
nd
S
tray
capacity
C
due to dynamic test circuit in Figure E.
Rev. 2_3
12.06.2013
3
SKW30N60
160A
140A
120A
100A
80A
t
p
=4
s
15
s
I
c
100A
10A
1A
50
s
200
s
T
C
=80°C
1ms
60A
T
C
=110°C
40A
DC
I
c
20A
0.1A
0A
1V
10V
100V
1000V
10Hz
100Hz
1kHz
10kHz
100kHz
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
C,
T
j
150
C)
(
T
j
150
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11
)
300W
250W
200W
150W
100W
50W
60A
50A
40A
30A
20A
10A
0A
Limited by bond wire
0W
25°C
50°C
75°C
100°C 125°C
25°C
50°C
75°C
100°C 125°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
Figure 4. Collector current as a function of
case temperature
(
T
j
150
C)
(
V
GE
15V,
T
j
150
C)
4
Rev. 2_3
12.06.2013
SKW30N60
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
V
GE
=20V
V
GE
=20V
15V
13V
11V
9V
7V
5V
15V
13V
11V
9V
7V
5V
0V
1V
2V
3V
4V
5V
0V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(
T
j
= 25
C)
(
T
j
= 150
C)
100A
4.0V
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
T
j
=+25°C
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
-55°C
+150°C
I
C
= 60A
I
C
= 30A
0V
2V
4V
6V
8V
10V
-50°C
0°C
50°C
100°C 150°C
V
GE
,
GATE
–
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
(
V
CE
= 10V)
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
5
Rev. 2_3
12.06.2013
SKW30N60
1000ns
100ns
10ns
1000ns
100ns
10ns
t
d(off)
t
d(off)
t
f
t
f
t
d(on)
t
r
t
d(on)
t
r
10A
20A
30A
40A
50A
60A
0
10
20
30
40
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11
,
Dynamic test circuit in Figure E)
(inductive load,
T
j
= 150
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A,
Dynamic test circuit in Figure E)
1000ns
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
t
d(off)
max.
100ns
t
f
t
r
typ.
t
d(on)
min.
10ns
0°C
50°C
100°C
150°C
-50°C
0°C
50°C
100°C 150°C
T
j
,
JUNCTION TEMPERATURE
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A,
R
G
= 11
,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.7mA)
Dynamic test circuit in Figure E)
6
Rev. 2_3
12.06.2013
SKW30N60
5.0mJ
4.5mJ
4.0mJ
3.5mJ
3.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
4.0mJ
3.5mJ
3.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
E
ts
*
E
ts
*
E
on
*
E
off
E
off
E
on
*
10A
20A
30A
40A
50A
60A
70A
0
10
20
30
40
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11
,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
10
0
K/W
3.0mJ
*)
E
on
and
E
ts
include losses
due to diode recovery.
D
=0.5
2.5mJ
0.2
10
-1
K/W
0.1
2.0mJ
E
ts
*
0.05
0.02
1.5mJ
10
-2
K/W
R
, ( 1 / W )
0.3681
0.0938
,
( s )
0.01
0.0555
1.26*10
-3
1.49*10
-4
E
on
*
1.0mJ
0.0380
10
-3
K/W
10
-4
K/W
E
off
R
1
R
2
0.5mJ
single pulse
C
1
=
1
/
R
1
C
2
=
2
/
R
2
0.0mJ
1µs
10µs 100µs 1ms
10ms 100ms
1s
0°C
50°C
100°C
150°C
t
p
,
PULSE WIDTH
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A,
R
G
= 11
,
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
Dynamic test circuit in Figure E)
7
Rev. 2_3
12.06.2013
SKW30N60
25V
20V
15V
10V
5V
C
iss
120V
1nF
100pF
10pF
480V
C
oss
C
rss
0V
0nC
50nC
100nC
150nC
200nC
0V
10V
20V
30V
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 17. Typical gate charge
(
I
C
= 30A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
25
s
500A
450A
400A
350A
300A
250A
200A
150A
100A
50A
20
s
15
s
10
s
5
s
0
s
10V
0A
10V
11V
12V
13V
14V
15V
12V
14V
16V
18V
20V
V
GE
,
GATE
–
EMITTER VOLTAGE
V
GE
,
GATE
–
EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
= 600V, start at
T
j
= 25
C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(
V
CE
600V,
T
j
= 150
C)
8
Rev. 2_3
12.06.2013
SKW30N60
700ns
600ns
500ns
400ns
300ns
200ns
100ns
0ns
3500nC
3000nC
2500nC
2000nC
1500nC
1000nC
500nC
0nC
I
F
= 60A
I
F
= 60A
I
F
= 30A
I
F
= 30A
I
F
= 15A
I
F
= 15A
100A/
s 300A/
s 500A/
s 700A/
s 900A/
s
100A/
s 300A/
s 500A/
s 700A/
s 900A/
s
di
F
/
dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 200V,
T
j
= 125
C,
di
F
/
dt
,
DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
1000A/
s
800A/
s
600A/
s
400A/
s
200A/
s
24A
20A
I
F
= 60A
16A
I
F
= 30A
12A
I
F
= 15A
8A
4A
0A/
s
0A
100A/
s 300A/
s 500A/
s 700A/
s 900A/
s
100A/
s 300A/
s 500A/
s 700A/
s 900A/
s
di
F
/
dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
C,
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 200V,
T
j
= 125
C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
9
Rev. 2_3
12.06.2013
SKW30N60
60A
50A
40A
30A
20A
10A
0A
2.0V
1.5V
1.0V
I
F
= 60A
150°C
100°C
I
F
= 30A
25°C
-55°C
0.5V
0.0V
1.0V
1.5V
2.0V
-40°C 0°C
40°C 80°C
120°C
V
F
,
FORWARD VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as
a function of forward voltage
Figure 26. Typical diode forward voltage as
a function of junction temperature
10
0
K/W
D
=0.5
0.2
0.1
10
-1
K/W
0.05
R
, ( 1 / W )
0.270
0.231
0.221
0.203
,
( s )
0.157
0.02
2.08*10
-2
2.29*10
-3
2.04*10
-4
1.03*10
-5
0.01
10
-2
K/W
0.070
R
1
R
2
single pulse
C
1
=
1
/
R
1
C
2
=
2
/
R
2
10
-3
K/W
1µs
10µs 100µs 1ms
10ms 100ms
1s
t
p
,
PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
10
Rev. 2_3
12.06.2013
SKW30N60
11
Rev. 2_3
12.06.2013
SKW30N60
i,v
t
=t
+
t
S F
di /dt
r r
F
Q
=Q
+
Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10%
I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90%
I
Figure C. Definition of diodes
switching characteristics
1
2
n
r
1
r
2
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance
L
=180nH
and
S
tray
capacity
C
=900pF.
Published by
Infineon Technologies AG
,
12
Rev. 2_3
12.06.2013
SKW30N60
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
13
Rev. 2_3
12.06.2013
