Infineon-Technologies-SPA06N60C3
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SPA06N60C3
CoolMOS
TM
Power Transistor
Features
Product Summary
DS
@
T
j,max
V
650
0.75
6.2
V
Ω
A
• New revolutionary high voltage technology
• Ultra low gate charge
R
DS(on),max
1)
I
D
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme d
v
/d
t
rated
P-TO220-3-31
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)
Type
Package
Ordering Code
Marking
Q67040-S4631 06N60C3
SPA06N60C3
P-TO220-3-31
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25 °C
T
C
=100 °C
T
C
=25 °C
6.2
3.9
A
Pulsed drain current
1)
I
D,pulse
E
AS
E
AR
I
AR
18.6
200
0.5
I
D
=3.1 A,
V
DD
=50 V
I
D
=6.2 A,
V
DD
=50 V
Avalanche energy, single pulse
mJ
1),2)
1)
Avalanche energy, repetitive
t
AR
6.2
A
Avalanche current, repetitive
t
AR
Drain source voltage slope
Gate source voltage
I
D
=6.2 A,
V
DS
=480 V,
T
j
=125 °C
50
d
v
/d
t
V/ns
V
V
GS
±20
±30
static
V
GS
AC (
f
>1 Hz)
T
C
=25 °C
P
tot
32
Power dissipation
W
T
j
,
T
stg
-55 … 150
Operating and storage temperature
°C
Rev. 1.0
page 1
2004-04-27
SPA06N60C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
–
–
–
–
3.92 K/W
80
Thermal resistance, junction –
ambient
R
thJA
leaded
1.6 mm (0.063 in.)
from case for 10 s
T
sold
Soldering temperature
–
–
260 °C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
(BR)DS
V
V
GS
=0 V,
I
D
=250 µA
GS
=0 V,
I
D
=6.2 A
Drain-source breakdown voltage
Avalanche breakdown voltage
600
–
–
–
–
V
700
V
GS(th)
V
DS
=
V
GS
,
I
D
=0.26 mA
Gate threshold voltage
2.1
–
3
3.9
1
V
DS
=600 V,
V
GS
=0 V,
I
DSS
Zero gate voltage drain current
0.1
µA
T
j
=25 °C
V
DS
=600 V,
V
GS
=0 V,
–
–
–
–
–
100
T
j
=150 °C
I
GSS
V
V
GS
=20 V,
V
DS
=0 V
GS
=10 V,
I
D
=3.9 A,
Gate-source leakage current
100 nA
R
DS(on)
Drain-source on-state resistance
0.68
0.75
Ω
T
j
=25 °C
V
GS
=10 V,
I
D
=3.9 A,
–
–
–
1.82
1
–
–
–
T
j
=150 °C
R
G
g
fs
Gate resistance
f
=1 MHz, open drain
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=3.9 A
,
Transconductance
5.6
S
Rev. 1.0
page 2
2004-04-27
SPA06N60C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
C
iss
–
–
–
620
200
17
–
–
–
pF
V
GS
=0 V,
V
DS
=25 V,
C
oss
C
rss
Output capacitance
f
=1 MHz
Reverse transfer capacitance
Effective output capacitance, energy
related
3)
C
o(er)
–
–
28
47
–
–
V
GS
=0 V,
V
DS
=0 V
to 480 V
Effective output capacitance, time
related
4)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
7
–
–
–
–
ns
V
V
DD
=480 V,
12
52
10
GS
=10 V,
I
D
=6.2 A,
Turn-off delay time
Fall time
R
G
=12
Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
3.3
12
–
–
nC
V
Q
gd
V
V
DD
=480 V,
I
D
=6.2 A,
GS
=0 to 10 V
Q
g
24
31
–
V
plateau
Gate plateau voltage
5.5
1)
Pulse width limited by maximum temperature
T
j,max
only
2)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
3)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
4)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Rev. 1.0
page 3
2004-04-27
SPA06N60C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Reverse Diode
I
S
Diode continuous forward current
Diode pulse current
–
–
–
–
6.2
A
V
T
C
=25 °C
I
S,pulse
18.6
V
GS
=0 V,
I
F
=6.2 A,
V
SD
Diode forward voltage
–
0.97
1.2
T
j
=25 °C
t
rr
Reverse recovery time
–
–
–
400
3.5
25
–
–
–
ns
µC
A
V
R
=480 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
Q
rr
I
rrm
Reverse recovery charge
Peak reverse recovery current
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
R
th1
R
th2
R
th3
R
th4
R
th5
0.034
0.15
K/W
C
th1
C
th2
C
th3
C
th4
C
th5
0.0000507
0.00045
0.00117
0.0114
0.939
Ws/K
0.388
0.713
1.6
Rev. 1.0
page 4
2004-04-27
SPA06N60C3
1 Power dissipation
2 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
P
tot
=f(
T
C
)
10
2
40
30
20
10
0
limited by on-state
resistance
1 µs
10
1
10
0
10 µs
100 µs
1 ms
DC
10 ms
10
-1
10
-2
10
0
10
1
10
2
10
3
0
40
80
120
160
T
C
[°C]
V
DS
[V]
3 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
j
=25 °C
4 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
parameter:
D=t
p
/
T
parameter:
V
GS
10
1
20
16
12
8
20 V
7 V
0.5
6.5 V
10
0
0.2
6 V
0.1
0.05
5.5 V
5 V
10
-1
0.02
0.01
single pulse
4
4.5 V
4 V
10
-2
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
5
10
15
20
V
DS
[V]
t
p
[s]
Rev. 1.0
page 5
2004-04-27
SPA06N60C3
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=150 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
DS(on)
=f(
I
D
);
T
j
=150 °C
R
parameter:
V
GS
8
4
6 V
20 V
5.5 V
4 V
4.5 V
5 V
5.5 V
7 V
6.5 V
6
4
2
0
3
2
1
6 V
5 V
20 V
4.5 V
4 V
0
0
0
5
10
15
20
2
4
6
8
10
V
DS
[V]
I
D
[A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
R
DS(on)
=f(
T
j
);
I
D
=3.9 A;
V
GS
=10 V
2
25
20
15
10
5
25 °C
1.6
1.2
98 %
0.8
typ
150 °C
0.4
0
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T
j
[°C]
V
GS
[V]
Rev. 1.0
page 6
2004-04-27
SPA06N60C3
9 Typ. gate charge
GS
=f(
Q
gate
);
I
D
=6.2 A pulsed
10 Forward characteristics of reverse diode
I
F
=f(
V
SD
V
)
parameter:
V
DD
parameter:
T
j
10
2
12
10
8
25 °C
25 °C, 98%
120 V
480 V
150 °C, 98%
10
1
150 °C
6
4
10
0
2
10
-1
0
0
0
0.5
1
1.5
SD
[V]
2
2.5
10
20
30
Q
gate
[nC]
V
11 Avalanche SOA
12 Avalanche energy
I
AR
=f(
t
AR
)
E
AS
=f(
T
j
);
I
D
=3.1 A;
V
DD
=50 V
parameter:
T
j(start)
8
250
200
150
100
50
6
4
2
0
25 °C
125 °C
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
20
60
100
T
j
[°C]
140
180
t
AR
[µs]
Rev. 1.0
page 7
2004-04-27
SPA06N60C3
13 Drain-source breakdown voltage
14 Typ. capacitances
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
10
4
700
10
3
660
620
580
540
Ciss
10
2
Coss
10
1
Crss
10
0
0
100
200
300
DS
[V]
400
500
-60
-20
20
60
T
j
[°C]
100
140
180
V
15 Typ.
C
oss
stored energy
E
oss
=
f
(V
DS
)
5
4
3
2
1
0
0
100
200
300
400
500
600
V
DS
[V]
Rev. 1.0
page 8
2004-04-27
SPA06N60C3
Definition of diode switching characteristics
P-TO220-3-31: Outline
Dimensions in mm
Rev. 1.0
page 9
2004-04-27
SPA06N60C3
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies’ components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 10
2004-04-27
