Infineon-Technologies-SPB18P06PG
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SPB18P06P
G
SIPMOS
®
Power-Transistor
Product Summary
Features
V
DS
-60
0.13
-18.6
V
Ω
A
• P-Channel
R
DS(on),max
I
D
• Enhancement mode
• Avalanche rated
• d
v
/d
t
rated
P
G
-TO263-3
• 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type
Package
Tape and reel information
Marking Lead
free
18P06P
Yes
Packing
SPB18P06P
G
P
G
-TO263-3
1000 pcs / reel
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
steady state
I
D
T
A
=25 °C
T
A
=100 °C
T
A
=25 °C
-18.7
Continuous drain current
A
-13.2
-74.8
I
D,pulse
E
AS
Pulsed drain current
151
-6
I
D
=18.7 A,
R
GS
=25
Ω
Avalanche energy, single pulse
mJ
Avalanche energy, periodic limited by
T
jmax
E
AR
8
I
D
=18.7 A,
V
DS
=48 V,
d
i
/d
t
=-200 A/µs,
Reverse diode d
v
/d
t
d
v
/d
t
kV/µs
T
j,max
=175 °C
V
GS
±20
81.1
Gate source voltage
V
P
tot
T
A
=25 °C
Power dissipation
W
°C
T
j
,
T
stg
“-55 … +175”
Operating and storage temperature
ESD class
260 °C
Soldering temperature
IEC climatic category; DIN IEC 68-1
55/175/56
Rev 1.
6
page 1
20
12
–
0
9
–
0
7
SPB18P06P
G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
Thermal resistance,
junction – case
R
thJC
–
–
–
–
1.85 K/W
62
Thermal resistance,
junction – ambient,leaded
R
thJA
R
thJA
SMD verson, device on PCB:
minimal footprint
–
–
–
–
62
40
K/W
6 cm
2
cooling area
1)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS(th)
V
V
GS
=0 V,
I
D
=-250 µA
DS
=
V
GS
,
I
D
=-
Drain-source breakdown voltage
-60
–
–
V
Gate threshold voltage
-2.1
3
-4
1000 µA
V
DS
=-60 V,
V
GS
=0 V,
I
DSS
Zero gate voltage drain current
–
-0.1
-1
µA
T
j
=25 °C
V
DS
=-60 V,
V
GS
=0 V,
–
–
–
-10
-10
101
-100
T
j
=150 °C
I
GSS
V
V
GS
=-20 V,
V
DS
=0 V
Gate-source leakage current
-100 nA
R
DS(on)
GS
=-10 V,
I
D
=-13.2 A
Drain-source on-state resistance
130
–
m
Ω
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=-13.2 A
,
g
fs
Transconductance
5
10
S
2
1)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain connection.
FCB is vertical without blown air.
Rev 1.
6
page 2
20
12
–
0
9
–
0
7
SPB18P06P
G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
–
–
–
–
–
–
–
690
230
95
860 pF
290
V
GS
=0 V,
V
DS
=-25 V,
C
oss
C
rss
t
d(on)
t
r
f
=1 MHz
120
12
18
8.7
37
ns
V
DD
=-30 V,
V
GS
=-
5.8
25
10 V,
I
D
=-13.2 A,
R
G
=2.7
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
37
11
16.5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
-4.1
-11
-5.5 nC
-17
Q
gd
V
DD
=-48 V,
I
D
=-
18.6 A,
V
GS
=0 to -10 V
Q
g
-21
-28
V
plateau
Gate plateau voltage
-5.94
–
V
A
Reverse Diode
I
S
Diode continuous forward current
Diode pulse current
–
–
–
–
-18.6
-74.8
T
A
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=18.6 A,
V
SD
t
rr
Diode forward voltage
Reverse recovery time
Reverse recovery charge
–
–
–
-0.99
70
-1.33
V
T
j
=25 °C
105 ns
208 nC
V
R
=30 V,
I
F
=|
I
S
|,
d
i
F
/d
t
=100 A/µs
Q
rr
139
Rev 1.
6
page 3
20
12
–
0
9
–
0
7
SPB18P06P
G
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
); |
V
GS
|
≥
10 V
18
16
14
12
10
8
75
60
45
30
15
6
4
2
0
0
0
0
40
80
T
A
[°C]
120
160
40
80
A
[°C]
120
160
T
3 Safe operating area
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
thJA
=f(
t
p
)
Z
parameter:
D
=
t
p
/
T
10
2
10
1
10 µs
100 µs
limited by on-state
resistance
1 ms
10 ms
10
1
10
0
10
0
0.5
DC
0.2
0.1
0.05
0.02
10
-1
0.01
10
-5
si
n
1
0
–
4
uls
e
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
-2
10
-1
10
0
10
1
10
2
-V
DS
[V]
t
p
[s]
Rev 1.
6
page 4
20
12
–
0
9
–
0
7
SPB18P06P
G
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
DS(on)
=f(
I
D
);
T
j
=25 °C
R
parameter:
V
GS
parameter:
V
GS
25
500
450
400
-10 V
-20V
-7V
20
15
10
5
-6 V
-4 V
350
-4.5 V
300
-5 V
-5.5 V
250
200
150
100
50
-5.5 V
-6 V
-5 V
-7 V
-10 V
-20 V
-4.5 V
-4 V
0
0
0
1
2
3
4
5
0
5
10
15
20
25
30
35
-V
DS
[V]
–
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25 °C
14
12
10
8
14
12
10
8
6
6
4
4
125 °C
2
25 °C
2
0
0
0
1
2
3
4
5
6
0
5
10
15
20
–
I
D
[A]
-V
GS
[V]
Rev 1.
6
page 5
20
12
–
0
9
–
0
7
SPB18P06P
G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=-13.2 A;
V
GS
=-10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=-1000 µA
300
250
200
5
4.5
max.
4
3.5
typ.
3
98 %
150
2.5
2
typ.
min.
100
1.5
1
0.5
0
50
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
175 °C, typ
25 °C, 98%
10
1
10
3
10
2
10
1
Ciss
175 °C, 98%
Coss
10
0
10
-1
10
-2
Crss
25 °C, typ
0
5
10
15
20
25
0
0.5
1
1.5
-V
SD
[V]
2
2.5
3
-V
DS
[V]
Rev 1.
6
page 6
20
12
–
0
9
–
0
7
SPB18P06P
G
13 Avalanche characteristics
AS
=f(
t
AV
);
R
GS
=25
Ω
14 Typ. gate charge
GS
=f(
Q
gate
);
I
D
=-18.6 A pulsed
V
I
parameter:
T
j(start)
parameter:
V
DD
10
2
16
14
12
10
8
30 V
12 V
48 V
25 °C
10
1
100 °C
125 °C
6
4
2
10
0
10
0
0
0
10
1
10
2
10
3
10
20
30
40
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=-250 µA
70
65
60
55
50
-60
-20
20
60
100
140
180
T
j
[°C]
Rev 1.
6
page 7
20
12
–
0
9
–
0
7
SPB18P06P
G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev 1.
6
page 8
20
1
2
–
0
9
–
0
7
