Infineon-Technologies-SPB80N06S-08
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SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
SIP
MOS
®
Power-Transistor
Product Summary
Features
V
DS
55
7.7
80
V
• N-channel – Normal Level -Enhancement mode
• Automotive AEC Q101 qualified
R
DS(on),max
(SMD version)
m
W
A
I
D
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green Package
PG-TO263-3-2
• Avalanche test
PG-TO262-3-1
PG-TO220-3-1
• Repetive Avalanche up to
T
jmax
= 175 °C
• d
v
/d
t
rated
Type
Package
Ordering Code
Marking
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
SP0000-84808
1N0608
SP0000-82518
1N0608
SP0000-84809 1N0608
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25 °C,
V
GS
=10 V
80
A
T
C
=100 °C,
V
GS
=10 V
T
C
=25 °C
80
320
700
30
Pulsed drain current
2)
I
D,pulse
I
D
=80 A,
R
GS
=25
W
,
V
DD
=25 V
E
AS
Avalanche energy, single pulse
mJ
Avalanche energy, periodic
2)
E
AR
T
j
=175 °C
I
D
=80 A,
V
DS
=40 V,
d
i
/d
t
=200 A/µs,
T
j,max
=175 °C
Reverse diode d
v
/d
t
2)
d
v
/d
t
6
kV/µs
V
GS
Gate source voltage
±20
300
V
P
tot
T
C
=25 °C
Power dissipation
W
°C
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … +175
55/175/56
Rev. 1.0
page 1
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
2)
R
thJC
Thermal resistance, junction – case
–
–
0.38
–
0.5
62
K/W
Thermal resistance, junction –
ambient, leaded
R
thJA
R
thJA
SMD version, device on PCB
minimal footprint
–
–
–
–
62
40
6 cm2 cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=240 µA
Drain-source breakdown voltage
Gate threshold voltage
55
–
–
V
2.1
3.0
4
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
–
–
0.1
10
1
µA
V
DS
=25 V,
V
GS
=0 V,
T
j
=150 °C
2)
100
I
GSS
V
GS
=20 V,
V
DS
=0 V
Gate-source leakage current
–
–
10
100 nA
R
DS(on)
V
GS
=10 V,
I
D
=80 A
Drain-source on-state resistance
6.5
8
m
W
V
GS
=10 V,
I
D
=80 A
SMD version
–
–
6.2
73
7.7
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=80 A
,
Transconductance
2)
footnote on page 3
g
fs
–
S
Rev. 1.0
page 2
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
–
–
–
–
–
–
–
3660
1075
540
22
–
–
–
–
–
–
–
pF
ns
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
C
oss
C
rss
t
d(on)
t
r
53
V
DD
=30 V, I
D
=80 A,
V
GS
=10 V, R
G
=2.4
W
t
d(off)
t
f
Turn-off delay time
Fall time
54
32
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
19
62
–
nC
Q
gd
–
187
–
V
DD
=44 V,
I
D
=80 A,
V
GS
=0 to 10 V
Q
g
125
5.4
V
plateau
Gate plateau voltage
V
A
Reverse Diode
2)
I
S
Diode continous forward current
Diode pulse current
–
–
–
–
80
T
C
=25 °C
I
S,pulse
320
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
SD
Diode forward voltage
Reverse recovery time
Reverse recovery charge
–
–
–
0.9
105
30
1.3
V
V
R
=27.5 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
t
rr
ns
nC
Q
rr
–
1)
Current is limited by bondwire; with an
R
thJC
=0.5 K/W the chip is able to carry 132A at 25°C. For detailed
2)
Defined by design not subjected to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
=10 V
350
300
250
200
150
100
50
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
1000
10 µs
100 µs
limited by on-state
resistance
10
0
100
10
1
1 ms
0.5
10 ms
DC
0.2
10
-1
0.1
0.05
0.02
0.01
10
-2
single pulse
10
-3
0.1
1
10
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
160
25
6.5 V
V 8
V 10
140
120
100
80
6 V
V 7
20
V 4.5
V 5
V 5.5
15
10
5
5.5 V
V 6
V 6.5
V 7
60
5 V
V 8
V 10
40
4.5 V
20
0
0
0
1
2
3
0
20
40
60
I
D
[A]
80
100
120
V
DS
[V]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25 °C
160
140
120
100
80
80
70
60
50
40
30
20
10
0
60
40
175 °C
20
25 °C
0
0
2
4
6
8
0
20
40
60
80
V
GS
[V]
I
D
[A]
Rev. 1.0
page 5
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
9 Typical Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=80 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
4
3.5
3
16
14
12
10
8
µA 1200
µA 240
2.5
2
6
1.5
1
4
2
0
0.5
-60
-20
20
60
100
140
180
-60
-20
20
60
T
j
[°C]
100
140
180
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
10
4
Ciss
Coss
10
3
Crss
25 °C
175 °C
10
2
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
[V]
V
SD
[V]
Rev. 1.0
page 6
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
13 Typ. Avalanche characteristics
14 Typ. Avalanche Energy
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
E
AS
=f(
T
j
); V
DD
= 25 V;
R
GS
=25
W
parameter:
I
D
100
800
80 A
C °25
700
C °100
C °150
600
500
400
300
200
100
0
10
1
0
50
100
150
200
1
10
100
1000
t
AV
[µs]
T
j
[°C]
15 Typ. gate charge
16 Drain-source breakdown voltage
V
GS
=f(
Q
gate
);
I
D
=80 A pulsed
parameter:
V
DD
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
64
62
60
58
56
54
52
50
12
10
8
V 44
V 11
6
4
2
0
-60
-20
20
60
100
140
180
0
20
40
60
80
100
120
140
Q
gate
[nC]
T
j
[°C]
Rev. 1.0
page 7
2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies’ components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2005-06-28
