Infineon-Technologies-SPD08N50C3
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SPD08N50C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
V
@
T
560
0.6
7.6
V
Ω
A
DS
jmax
R
DS(on)
I
D
•
Worldwide best
R
in TO-252
DS(on)
P
G
-TO252
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme d
v
/d
t
rated
•
Ultra low effective capacitances
•
Improved transconductance
; available in Halogen free mold compound
a)
Type
SPD08N50C3
Package
P
G
-TO252
Ordering Code
Q67040-S4569
Marking
08N50C3
Maximum Ratings, at
T
= 25°C, unless otherwise specified
C
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T
= 25 °C
7.6
4.6
C
T
= 100 °C
C
22.8
230
Pulsed drain current,
t
limited by
T
Avalanche energy, single pulse
I
D puls
p
jmax
mJ
E
AS
I
=5.5A,
V
=50V
D
DD
1)
E
0.5
Avalanche energy, repetitive
t
limited by
T
AR
AR
jmax
I
=7.6A,
V
=50V
D
DD
7.6
±20
30
A
V
Avalanche current, repetitive
t
limited by
T
Gate source voltage
I
AR
AR
jmax
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
83
W
Power dissipation,
T
= 25°C
C
°C
V/ns
Operating and storage temperature
Reverse diode dv/dt
T
,
T
dv/dt
-55… +150
6
)
15
a)
non-Halogen free (OPN: SPD08N50C3BT); Halogen free (OPN: SPD08N50C3AT)
2.6
2013-07-31
Rev.
P
age 1
SPD08N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
d
v
/d
t
50
V/ns
V
= 400 V,
I
= 7.6 A,
T
= 125 °C
DS
D
j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
–
–
–
–
1.5 K/W
75
Thermal resistance, junction – case
Thermal resistance, junction – ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
R
thJA
–
–
–
–
–
–
75
50
260 °C
2
2)
@ 6 cm
cooling area
Soldering temperature,
reflow soldering, MSL3
T
sold
3)
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
500
–
typ. max.
V
V
=0V,
I
=0.25mA
–
–
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS
GS
D
V
=0V,
I
=7.6A
600
–
V
GS
D
(BR)DS
I
=350
µΑ
,
V
=
V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=500V,
V
=0V,
DS GS
µA
DSS
T
=25°C,
–
–
–
0.5
–
–
1
100
100 nA
j
T
=150°C
j
V
V
=20V,
V
=0V
Gate-source leakage current
I
GS
GS
DS
GSS
=10V,
I
=4.6A,
Drain-source on-state resistance
R
Ω
D
DS(on)
T
=25°C
–
–
–
0.5
1.5
1.2
0.6
–
–
j
T
=150°C
j
R
f
=1MHz, open Drain
Gate input resistance
G
2.6
Rev.
2013-07-31
P
age 2
SPD08N50C3
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥
2*
I
*
R
,
–
6
–
fs
DS
D
DS(on)max
I
=4.6A
D
Input capacitance
C
V
=0V,
V
=25V,
GS DS
–
–
–
–
750
350
12
–
–
–
–
pF
iss
f
=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
4)
V
V
=0V,
GS
Effective output capacitance,
energy related
Effective output capacitance,
time related
C
56
pF
ns
o(er)
=0V to 400V
DS
5)
C
–
30
–
o(tr)
Turn-on delay time
t
V
=400V,
V
=0/10V,
–
–
–
–
6
5
60
7
–
–
–
–
d(on)
DD
GS
I
=7.6A,
R
=12
Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=400V,
I
=7.6A
–
–
–
3
17
32
–
–
–
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=400V,
I
=7.6A,
Gate charge total
DD
D
=0 to 10V
GS
V
=400V,
I
=7.6A
–
5
–
Gate plateau voltage
V
(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
4
Soldering temperature for TO-263: 220°C, reflow
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
5
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
6
I
SD
<=I
D
, di/dt<=
4
00A/us, V
DClink
=400V, V
peak
<V
BR, DSS
, T
j
<T
j,max
.
Identical low-side and high-side switch.
2.6
Rev.
P
age 3
2
0
1
3
–
0
7
–
3
1
SPD08N50C3
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T
=25°C
–
–
7.6
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
–
–
22.8
SM
pulsed
V
=0V,
I
=
I
F S
–
–
–
–
–
1
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V
=400V,
I
=
I
,
370
3.6
25
–
–
–
–
ns
µC
A
rr
R
F S
d
i
/d
t
=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
F
I
rrm
700
A/µs
Peak rate of fall of reverse
recovery current
di
/
dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.024
0.046
0.085
0.308
0.317
0.112
K/W
0.00012
0.0004578
0.000645
0.001867
0.004795
0.045
R
R
R
R
R
th5
R
C
Ws/K
th1
th2
th3
th4
th1
C
th2
C
th3
C
th4
C
th5
C
th6
th6
External Heatsink
T
j
R
th1
R
th,n
T
case
P
tot
(t)
C
th1
C
th2
C
th,n
T
amb
2.6
Rev.
2013-07-31
P
age 4
SPD08N50C3
1 Power dissipation
=
f
(
T
)
2 Safe operating area
I
=
f
(
V
P
)
DS
tot
C
D
parameter :
D
= 0 ,
T
=25°C
C
10
2
SPD08N50C3
100
W
A
80
70
60
50
40
30
20
10
0
10
1
10
0
tp = 0.001 ms
tp = 0.01 ms
10
-1
tp = 0.1 ms
tp = 1 ms
DC
10
-2
0
20
40
60
80 100
120
160
10
0
10
1
10
2
10
3
°C
T
V
V
DS
C
3 Transient thermal impedance
=
f
(
t
)
4 Typ. output characteristic
I
=
f
(
V
);
T
=25°C
Z
thJC
p
D
DS
j
parameter:
D
=
t
/
T
parameter:
t
= 10 µs,
V
p
p
GS
10
1
24
K/W
20V
10V
A
7V
8V
10
0
10
-1
10
-2
10
-3
6,5V
6V
16
12
8
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
5,5V
single pulse
5V
4
4,5V
0
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
0
5
10
15
25
s
V
DS
t
V
p
2.6
Rev.
2013-07-31
P
age 5
SPD08N50C3
5 Typ. output characteristic
I
=
f
(
V
);
T
=150°C
6 Typ. drain-source on resistance
=
f
(
I
)
R
D
DS
j
DS(on)
D
parameter:
t
= 10 µs,
V
parameter:
T
=150°C,
V
p
GS
j
GS
10
13
A
4V
Ω
20V
8V
11
6.5V
4.5V
8
6V
10
9
8
7
6
5
4
3
2
1
0
7
5V
6
5.5V
6V
5
6.5V
8V
5.5V
4
3
2
1
0
20V
5V
4.5V
4V
0
2
4
6
8
10 12 14 16 18 20 22
25
0
2
4
6
8
10
12
15
V
DS
A
I
V
D
7 Drain-source on-state resistance
=
f
(
T
)
8 Typ. transfer characteristics
R
I
=
f
(
V
);
V
≥
2 x
I
x
R
DS(on)
j
D
GS
DS
D
DS(on)max
parameter :
I
= 4.6 A,
V
= 10 V
parameter:
t
= 10 µs
D
GS
p
SPD08N50C3
3.4
24
A
Ω
25°C
20
18
16
14
12
10
8
2.8
2.4
2
150°C
1.6
1.2
0.8
0.4
0
6
98%
typ
4
2
0
°C
-60
-20
20
60
100
180
0
2
4
6
10
GS
V
V
T
j
2.6
Rev.
2013-07-31
P
age 6
SPD08N50C3
9 Typ. gate charge
=
f
(
Q
10 Forward characteristics of body diode
V
)
I
=
f
(V
)
GS
Gate
F
SD
parameter:
I
= 7.6 A pulsed
parameter:
T
, t
p
= 10 µs
D
10
2
SPD08N50C3
SPD08N50C3
16
V
A
12
10
1
0.2
V
DS max
10
0.8
V
DS max
8
6
4
2
0
10
0
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
10
-1
nC
0
5
10 15 20 25 30 35 40
50
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Avalanche SOA
=
f
(
t
12 Avalanche energy
E
=
f
(
T
)
AS
I
)
AR
AR
j
par.:
T
≤
150 °C
par.:
I
= 5.5 A,
V
= 50 V
j
D
DD
260
mJ
8
A
220
200
180
160
140
120
100
80
6
5
4
3
2
1
0
T
(START)
=25°C
j
T
(START)
=125°C
j
60
40
20
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
20
40
60
80
100
120
160
°C
µs
t
T
AR
j
2.6
Rev.
2013-07-31
P
age 7
SPD08N50C3
13 Drain-source breakdown voltage
=
f
(
T
)
14 Avalanche power losses
P
=
f
(
f
)
AR
V
(BR)DSS
j
parameter:
E
=0.5mJ
AR
SPD08N50C3
500
600
V
W
570
560
550
540
530
520
510
500
490
480
470
460
450
300
200
100
0
10
4
-60
-20
20
60
100
180
10
5
10
6
°C
MHz
T
f
j
15 Typ. capacitances
C
=
f
(
V
16 Typ.
C
stored energy
oss
)
E
=
f
(
V
)
DS
oss
DS
parameter:
V
=0V,
f
=1 MHz
GS
10
4
4
pF
µJ
Ciss
10
3
10
2
10
1
10
0
3
2.5
2
Coss
1.5
1
Crss
0.5
0
0
100
200
300
500
DS
0
100
200
300
500
DS
V
V
V
V
2.6
Rev.
2013-07-31
P
age 8
SPD08N50C3
Definition of diodes switching characteristics
2013-07-31
2.6
Rev.
P
age 9
SPD08N50C3
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
2.6
Rev.
2013-07-31
P
age 10
SPD08N50C3
2.6
Rev.
2013-07-31
P
age 11
