Infineon-Technologies-SPP17N80C3
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SPP17N80C3
SPA17N80C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
V
800
0.29
17
V
Ω
A
DS
R
DS(on)
I
D
•
Worldwide best
R
in TO 220
DS(on)
P
G
-TO220-3-31 P
G
-TO220
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme d
v
/d
t
rated
3
2
1
P-TO220-3-31
•
Ultra low effective capacitances
•
Improved transconductance
•
P
G
-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP17N80C3
P
G
-TO220
Q67040-S4353
17N80C3
SPA17N80C3
P
G
-TO220-3-31
SP000216353
17N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP
SPA
Continuous drain current
I
A
D
1)
T
= 25 °C
17
11
17
11
C
1)
T
= 100 °C
C
Pulsed drain current,
t
limited by
T
I
D puls
51
51
A
p
jmax
Avalanche energy, single pulse
E
670
670
mJ
AS
I
=3.4A,
V
=50V
D
DD
2)
E
Avalanche energy, repetitive
t
limited by
T
0.5
0.5
AR
AR
jmax
I
=17A,
V
=50V
D
DD
Avalanche current, repetitive
t
limited by
T
Gate source voltage
I
17
±20
30
17
±20
30
A
V
AR
jmax
AR
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation,
T
= 25°C
208
42
W
C
Operating and storage temperature
T
,
T
-55…+150
°C
Rev. 2
.
7
P
age 1
20
1
1
-0
9
–
27
SPP17N80C3
SPA17N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
d
v
/d
t
50
V/ns
V
= 640 V,
I
= 17 A,
T
= 125 °C
DS
D
j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
–
–
–
–
–
–
–
–
0.6 K/W
Thermal resistance, junction – case
Thermal resistance, junction – case, FullPAK
Thermal resistance, junction – ambient, leaded
Thermal resistance, junction – ambient, FullPAK
SMD version, device on PCB:
thJC
3.6
62
80
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
@ min. footprint
@ 6 cm
cooling area
–
–
–
–
35
–
62
–
260 °C
2
3)
Soldering temperature,
wavesoldering
1.6 mm (0.063 in.) from case for 10s
T
sold
4)
Electrical Characteristics,
at
T
=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
800
–
typ. max.
V
V
=0V,
I
=0.25mA
–
–
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS
GS
D
V
=0V,
I
=17A
870
–
V
GS
D
(BR)DS
I
=1000
µ
A,
V
=V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
V
=800V,
V
=0V,
DS GS
µA
DSS
T
=25°C
–
–
–
0.5
–
–
25
250
100 nA
j
T
=150°C
j
V
V
=20V,
V
=0V
Gate-source leakage current
I
GS
GS
DS
GSS
=10V,
I
=11A
Drain-source on-state resistance
R
Ω
D
DS(on)
T
=25°C
–
–
–
0.25
0.78
0.7
0.29
–
j
T
=150°C
j
R
f
=1MHz, open drain
–
Gate input resistance
G
Rev. 2.
7
P
age 2
20
1
1
-0
9
–
27
SPP17N80C3
SPA17N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥
2*
I
*
R
,
DS
DS(on)max
–
15
–
fs
D
I
=11A
D
Input capacitance
C
C
C
C
V
=0V,
V
=25V,
GS DS
–
–
–
–
2320
1250
60
–
–
–
–
pF
iss
f
=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
5)
V
V
=0V,
GS
59
Effective output capacitance,
energy related
o(er)
=0V to 480V
DS
6)
–
124
–
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
t
V
=400V,
V
=0/10V,
GS
–
–
–
–
25
15
72
6
–
–
82
9
ns
d(on)
DD
I
=17A,
Rise time
t
D
r
R
=4.7
Ω
,
T
=125°C
Turn-off delay time
Fall time
t
G
j
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=640V,
I
=17A
–
–
–
12
46
91
–
–
nC
V
gs
gd
g
DD
D
V
V
=640V,
I
=17A,
177
Gate charge total
DD
D
=0 to 10V
GS
V
=640V,
I
=17A
–
6
–
Gate plateau voltage
V
(plateau)
DD
D
1
2
Limited only by maximum temperature
Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
5
Soldering temperature for TO-263: 220°C, reflow
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
6
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
Rev. 2.
7
P
age 3
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T
=25°C
–
–
17
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
–
–
51
SM
pulsed
V
=0V,
I
=
I
F S
–
–
–
–
–
1
550
15
51
1200
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V
=400V,
I
=
I
,
–
–
–
–
ns
µC
A
rr
R
F
S
d
i
/d
t
=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
I
F
rr
rrm
T
=25°C
A/µs
Peak rate of fall of reverse
recovery current
di /dt
j
rr
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP
0.00812
0.016
0.031
0.114
0.135
0.059
SPP
SPA
0.00812
0.016
0.031
0.16
SPA
R
R
R
R
R
th5
R
K/W
C
th1
0.0003562 0.0003562
Ws/K
th1
th2
th3
th4
C
0.001337
0.001831
0.005033
0.012
0.001337
0.001831
0.005033
0.008657
0.412
th2
C
th3
C
th4
0.324
2.522
C
th5
C
0.092
th6
th6
External Heatsink
T
j
R
th1
R
th,n
T
case
P
tot
(t)
C
th1
C
th2
C
th,n
T
amb
Rev. 2.
7
P
age 4
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
1 Power dissipation
=
f
(
T
)
2 Power dissipation FullPAK
P
P
=
f
(
T
)
tot
C
tot
C
SPP17N80C3
45
240
W
W
200
180
160
140
120
100
80
35
30
25
20
15
10
5
60
40
20
0
0
0
20
40
60
80 100
120
160
0
20
40
60
80 100
120
160
°C
T
°C
T
C
C
3 Safe operating area
I
=
f
(
V
4 Safe operating area FullPAK
I
=
f
(
V
)
)
D
DS
D
DS
parameter :
D
= 0 ,
T
=25°C
parameter:
D
= 0,
T
= 25°C
C
C
10
2
10
2
A
A
10
1
10
1
10
0
10
0
tp = 0.001 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
-1
10
-1
tp = 10 ms
DC
10
-2
10
-2
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
V
V
V
DS
DS
Rev. 2.
7
P
age 5
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
5 Transient thermal impedance
=
f
(
t
)
6 Transient thermal impedance FullPAK
Z
Z
=
f
(
t
)
thJC
p
thJC
p
parameter:
D
=
t
/
T
parameter:
D
=
t
/
t
p
p
10
1
10
1
K/W
K/W
10
0
10
-1
10
-2
10
-3
10
-4
10
0
10
-1
10
-2
10
-3
10
-4
D = 0.5
D = 0.2
D = 0.5
D = 0.1
D = 0.2
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
s
p
t
t
p
7 Typ. output characteristic
I
=
f
(
V
);
T
=25°C
8 Typ. output characteristic
I
=
f
(
V
);
T
=150°C
D
DS
j
D
DS
j
parameter:
t
= 10 µs,
V
parameter:
t
= 10 µs,
V
p
GS
p
GS
35
70
A
20V
10V
8V
20V
10V
A
60
55
50
45
40
35
30
25
20
15
10
5
7V
25
20
15
10
5
6.5V
6V
8V
7V
6V
5.5V
5V
4.5V
4V
5V
0
0
0
5
10
15
20
30
0
5
10
15
20
30
V
V
DS
DS
V
V
Rev. 2.
7
P
age 6
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
9 Typ. drain-source on resistance
=
f
(
I
)
10 Drain-source on-state resistance
R
=
f
(
T
)
DS(on)
R
DS(on)
D
j
parameter:
T
=150°C,
V
parameter :
I
= 11 A,
V
= 10 V
j
GS
D
GS
SPP17N80C3
1.5
1.6
Ω
Ω
1.3
1.2
1
1.2
4.5V
5.5V
4V
5V
6V
1.1
1
6.5V
0.8
0.6
0.4
0.2
0
0.9
0.8
0.7
0.6
0.5
7V
8V
98%
typ
10V
20V
°C
0
5
10
15
20
25
35
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
I
=
f
(
V
);
V
≥
2 x
I
x
R
12 Typ. gate charge
=
f
(
Q
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter:
t
= 10 µs
parameter:
I
= 17 A pulsed
p
D
SPP17N80C3
65
A
16
V
25°C
55
50
45
40
35
30
25
20
15
10
5
12
0,2
V
DS max
0,8
V
DS max
10
150°C
8
6
4
2
0
0
0
2
4
6
8
10 12 14 16
20
V
V
GS
0
20
40
60
80 100
120
160
nC
Q
Gate
Rev. 2.
7
P
age 7
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
13 Forward characteristics of body diode
I
=
f
(V )
14 Avalanche SOA
=
f
(
t
)
I
F
SD
AR
AR
parameter:
T
, t
p
= 10 µs
par.:
T
≤
150 °C
j
10
2
SPP17N80C3
18
A
A
14
12
10
8
10
1
10
0
6
T
j
= 25 °C typ
T
j
(START)
=25°C
T
j
= 150 °C typ
4
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
2
T
j
(START)
=125°C
10
-1
0
0
0.4
0.8
1.2
1.6
2
2.4
3
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
V
V
µs
AR
t
SD
15 Avalanche energy
=
f
(
T
)
16 Drain-source breakdown voltage
E
V
=
f
(
T
)
AS
j
(BR)DSS
j
par.:
I
= 3.4 A,
V
= 50 V
D
DD
SPP17N80C3
980
V
700
mJ
600
550
500
450
400
350
300
250
200
150
100
50
940
920
900
880
860
840
820
800
780
760
740
720
0
25
50
75
100
150
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Rev. 2.
7
P
age 8
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
17 Avalanche power losses
=
f
(
f
)
18 Typ. capacitances
C
=
f
(
V
)
P
AR
DS
parameter:
E
=0.5mJ
parameter:
V
=0V,
f
=1 MHz
AR
GS
10
5
500
pF
W
10
4
400
350
300
250
200
150
100
50
C
iss
10
3
10
2
C
oss
10
1
C
rss
10
0
0
10
4
10
5
10
6
0
100 200 300 400 500 600
800
DS
Hz
V
V
f
19 Typ.
C
stored energy
oss
E
=
f
(
V
)
oss
DS
18
µJ
14
12
10
8
6
4
2
0
0
100 200 300 400 500 600
800
DS
V
V
Rev. 2.
7
P
age 9
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
Definition of diodes switching characteristics
Rev. 2.
7
P
age 10
20
1
109
–
2
7
SPP
17
N
8
0C3
SPA
17
N
8
0C3
P
G
-TO220-3-1
, PG-TO220-3-21
Rev. 2.
7
P
age 1
1
20
11
-0
9
–
27
SPP
17
N
8
0C3
SPA
17
N
8
0C3
P
G
-TO220-3-
3
1
(FullPAK)
Rev. 2
.
7
P
age 1
2
20
11
-0
9
–
27
SPP17N80C3
SPA17N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.
7
P
age 1
3
20
11
-0
9
–
27
