Infineon-Technologies-SPP20N60S5
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SPP20N60S5
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
V
600
0.19
20
V
Ω
A
DS
R
DS(on)
I
D
•
Worldwide best
R
in TO 220
DS(on)
P
G
-TO220
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme d
v
/d
t
rated
2
3
2
1
•
Ultra low effective capacitances
•
Improved transconductance
P-TO220-3-1
Type
Package
Ordering Code
Marking
20N60S5
SPP20N60S5
P
G
-TO220
Q67040-S4751
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T
= 25 °C
20
13
C
T
= 100 °C
C
40
Pulsed drain current,
t
limited by
T
I
p
jmax
D puls
690
mJ
Avalanche energy, single pulse
E
AS
I
= 10 A,
V
= 50 V
D
DD
1)
jmax
E
1
Avalanche energy, repetitive
t
limited by
T
AR
AR
I
= 20 A,
V
= 50 V
D
DD
20
A
V
Avalanche current, repetitive
t
limited by
T
Gate source voltage
I
V
AR
jmax
AR
±20
30
208
GS
V
P
Gate source voltage AC (f >1Hz)
GS
tot
Power dissipation,
T
= 25°C
W
C
°C
Operating and storage temperature
T
,
T
-55… +150
j
stg
Page 1
Rev. 2.
8
200
9
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–
01
SPP20N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
d
v
/d
t
20
V/ns
V
= 480 V,
I
= 20 A,
T
= 125 °C
D
j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
–
–
0.6 K/W
Thermal resistance, junction – case
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
–
–
–
35
62
–
2
2)
@ 6 cm
cooling area
Soldering temperature
,
wavesoldering
T
–
–
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
600
–
typ. max.
V
V
=0V,
I
=0.25mA
–
–
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS
GS
D
V
=0V,
I
=20A
700
–
V
GS
D
(BR)DS
I
=1000
µΑ
,
V
=
V
3.5
4.5
5.5
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V,
V
=0V,
µA
DS
GS
DSS
T
=25°C,
–
–
–
0.5
–
–
5
250
100 nA
j
T
=150°C
j
V
V
=20V,
V
=0V
Gate-source leakage current
I
GS
DS
GSS
=10V,
I
=13A,
Drain-source on-state resistance
R
Ω
GS
D
DS(on)
T
=25°C
–
–
–
0.16
0.43
12
0.19
j
T
=150°C
–
–
j
R
f
=1MHz, open Drain
Gate input resistance
G
Page 2
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
Transconductance
g
V
≥
2*
I
*
R
DS(on)max
,
–
12
–
S
fs
DS
D
I
=13A
D
Input capacitance
C
V
=0V,
V
=25V,
–
–
–
–
3000
1170
28
–
–
–
–
pF
iss
GS
DS
f
=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
3)
V
V
=0V,
GS
Effective output capacitance,
energy related
C
83
pF
ns
o(er)
=0V to 480V
DS
4)
Effective output capacitance,
time related
C
–
160
–
o(tr)
Turn-on delay time
t
V
=350V,
V
=0/10V,
–
–
–
–
120
25
140
30
–
–
d(on)
r
DD
GS
I
=20A,
R
=5.7
Ω
Rise time
t
t
t
D
G
Turn-off delay time
Fall time
210
45
d(off)
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=350V,
I
=20A
–
–
–
21
47
79
–
–
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=350V,
I
=20A,
103
Gate charge total
DD
D
=0 to 10V
GS
V
=350V,
I
=20A
–
8
–
Gate plateau voltage
V
(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
C
o(er)
is a fixed capacitance that gives the same stored energy a
s
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
4
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
Page 3
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T
=25°C
–
–
20
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
–
–
40
SM
pulsed
V
=0V,
I
=
I
F S
–
–
–
1
610
12
1.2
–
–
V
ns
µC
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V
=350V,
I
=
I
,
rr
R
F S
d
i
/d
t
=100A/µs
Reverse recovery charge
Q
rr
F
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.00769
0.015
0.029
0.114
0.136
0.059
K/W
0.0003763
0.001411
0.001931
0.005297
0.012
R
R
R
R
R
th5
R
C
Ws/K
th1
th2
th3
th4
th1
C
th2
C
th3
C
th4
C
th5
C
0.091
th6
th6
External Heatsink
T
j
R
th1
R
th,n
T
case
P
tot
(t)
C
th1
C
th2
C
th,n
T
amb
Page 4
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
1 Power dissipation
=
f
(
T
)
2 Safe operating area
I
=
f
(
V
P
)
DS
tot
C
D
parameter :
D
= 0 ,
T
=25°C
C
10
2
SPP20N60S5
240
W
A
200
180
160
140
120
100
80
10
1
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
10
-1
DC
60
40
20
10
-2
0
0
20
40
60
80 100
120
160
10
0
10
1
10
2
10
3
DS
°C
T
V
V
C
3 Transient thermal impedance
=
f
(
t
)
4 Typ. output characteristic
I
=
f
(
V
);
T
=25°C
Z
thJC
p
D
DS
j
parameter:
D
=
t
/
T
parameter:
t
= 10 µs,
V
p
p
GS
10
0
75
A
20V
15V
12V
11V
K/W
60
10
-1
10
-2
10
-3
55
50
45
40
35
30
25
20
15
10
5
10V
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
9V
single pulse
8V
7V
10
-4
0
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
0
5
10
15
20
30
DS
s
V
t
V
p
Page 5
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
5 Typ. output characteristic
I
=
f
(
V
);
T
=150°C
6 Typ. drain-source on resistance
=
f
(
I
)
R
D
DS
j
DS(on)
D
parameter:
t
= 10 µs,
V
parameter:
T
=150°C,
V
p
GS
j
GS
35
1.5
m
Ω
6V
6.5V
7V
A
20V
12V
10V
1.3
1.2
1.1
1
7.5V
8V
9V
25
8.5V
9V
8.5V
8V
10V
12V
20V
20
15
10
5
0.9
0.8
0.7
0.6
0.5
0.4
0.3
7.5V
7V
6.5V
6V
0
0
5
10
15
25
0
5
10
15
20
25
30
40
V
A
I
V
D
DS
7 Drain-source on-state resistance
=
f
(
T
)
8 Typ. transfer characteristics
R
I
=
f
(
V
);
V
≥
2 x
I
x
R
DS(on)
j
D
GS
DS
D
DS(on)max
parameter :
I
= 13 A,
V
= 10 V
parameter:
t
= 10 µs
D
GS
p
SPP20N60S5
1.1
Ω
70
A
60
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
55
25°C
50
150°C
45
40
35
30
25
20
15
10
5
98%
typ
0
°C
-60
-20
20
60
100
180
0
5
10
20
GS
V
V
T
j
Page 6
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
9 Typ. gate charge
=
f
(
Q
10 Forward characteristics of body diode
V
)
I
=
f
(V
)
GS
Gate
F
SD
parameter:
I
= 20 A pulsed
parameter:
T
, t
p
= 10 µs
D
j
10
2
SPP20N60S5
SPP20N60S5
16
V
A
0.2
V
DS max
0.8
V
DS max
12
10
1
10
8
6
10
0
T
j
= 25 °C typ
4
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
2
10
-1
0
nC
0
20
40
60
80
120
Gate
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
Q
SD
11 Avalanche SOA
=
f
(
t
12 Avalanche energy
E
=
f
(
T
)
AS
I
)
AR
AR
j
par.:
T
≤
150 °C
par.:
I
= 10 A,
V
= 50 V
j
D
DD
20
750
mJ
600
550
500
450
400
350
300
250
200
150
100
50
A
10
5
T
j
(START)
=25°C
T
j
(START)
=125°C
0
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
20
40
60
80
100
120
160
°C
T
µs
AR
t
j
Page 7
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
13 Drain-source breakdown voltage
=
f
(
T
)
14 Avalanche power losses
P
=
f
(
f
)
AR
V
(BR)DSS
j
parameter:
E
=1mJ
AR
SPP20N60S5
500
720
V
W
680
660
640
620
600
580
560
540
300
200
100
0
10
4
-60
-20
20
60
100
180
10
5
10
6
°C
Hz
T
f
j
15 Typ. capacitances
C
=
f
(
V
16 Typ.
C
stored energy
oss
)
E
=
f
(
V
)
DS
oss
DS
parameter:
V
=0V,
f
=1 MHz
GS
10
5
14
µJ
pF
12
10
4
11
10
9
C
iss
10
3
8
7
C
oss
6
10
2
5
4
C
rss
10
1
3
2
1
10
0
0
0
100
200
300
400
600
DS
0
100
200
300
400
600
DS
V
V
V
V
Page 8
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
Definition of diodes switching characteristics
Page 9
Rev.
2.
8
200
9
–
12
–
01
SPP
20
N60
S5
P
G
-TO220-3-1
, PG-TO220-3-21
Page 1
0
Rev. 2.
8
200
9
–
12
–
01
SPP20N60S5
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Page 11
Rev. 2.
8
200
9
–
12
–
01
