Infineon-Technologies-SPP24N60C3
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SPP24N60C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
V
@
T
650
0.16
24.3
V
Ω
A
DS
jmax
R
DS(on)
I
D
•
Worldwide best
R
in TO 220
DS(on)
P
G
-TO220-3-1
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme d
v
/d
t
rated
•
Ultra low effective capacitances
•
Improved transconductance
Type
SPP24N60C3
Package
P
G
-TO220-3-1 Q67040-S4639
Ordering Code
Marking
24N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T
= 25 °C
24.3
15.4
72.9
780
C
T
= 100 °C
C
Pulsed drain current,
t
limited by
T
Avalanche energy, single pulse
I
D puls
p
jmax
mJ
E
AS
I
= 10 A,
V
= 50 V
D
DD
1)
jmax
E
1
Avalanche energy, repetitive
t
limited by
T
AR
AR
I
= 24.3 A,
V
= 50 V
D
DD
24.3
A
V
Avalanche current, repetitive
t
limited by
T
Gate source voltage static
I
V
AR
jmax
AR
±20
30
240
GS
V
P
Gate source voltage AC (f >1Hz)
GS
tot
Power dissipation,
T
= 25°C
W
C
°C
V/ns
Operating and storage temperature
Reverse diode dv/dt
T
,
T
dv/dt
-55… +150
j
stg
4)
15
Page 1
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
d
v
/d
t
50
V/ns
V
= 480 ,
I
= 24.3 ,
T
= 125 °C
D
j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
–
–
–
–
–
0.52 K/W
62
Thermal resistance, junction – case
thJC
R
Thermal resistance, junction – ambient, leaded
Soldering temperature,
wavesoldering
1.6 mm (0.063 in.) from case for 10s
thJA
T
–
260 °C
sold
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
V
V
=0V,
I
=0.25mA
600
–
–
–
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS
GS
D
V
=0V,
I
=24.3A
–
700
V
GS
D
(BR)DS
I
=1200
µΑ
,
V
=
V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V,
V
=0V,
µA
DS
GS
DSS
T
=25°C,
–
–
0.1
–
1
100
j
T
=150°C
j
V
V
=20,
V
=0V
–
–
100 nA
Gate-source leakage current
Drain-source on-state resistance
R
I
GSS
GS
DS
=10V,
I
=15.4A,
Ω
GS
D
DS(on)
T
=25°C
–
–
–
0.14
0.34
0.66
0.16
–
–
j
T
=150°C
j
R
f
=1MHz, open Drain
Gate input resistance
G
Page 2
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥
2*
I
*
R
DS(on)max
,
–
21.5
–
fs
DS
D
I
=15.4A
D
Input capacitance
C
V
=0V,
V
=25V,
–
–
–
–
3000
1000
60
–
–
–
–
pF
iss
GS
DS
f
=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
2)
V
V
=0V,
Effective output capacitance,
energy related
C
141
pF
ns
GS
o(er)
=0V to 480V
DS
3)
Effective output capacitance,
time related
C
–
224
–
o(tr)
Turn-on delay time
t
V
=380V,
V
=0/10V,
–
–
–
–
13
21
140
14
–
–
–
–
d(on)
DD
GS
I
=24.3A,
R
=3.3
Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=480,
I
=24.3A
–
–
–
12.7
45.8
104.9 135
–
–
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=480V,
I
=24.3A,
Gate charge total
DD
D
=0 to 10V
GS
V
=480V,
I
=24.3A
–
5
–
Gate plateau voltage
V
(plateau)
DD
D
1
2
3
Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
C
o(er)
is a fixed capacitance that gives the same stored energy a
s
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
.
4
ISD<=ID, di/dt<=
2
00A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Page 3
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T
=25°C
–
–
24.3 A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
–
–
72.9
SM
pulsed
V
=0V,
I
=
I
F S
–
–
–
–
–
1
600
13
70
1400
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V
=480V,
I
=
I
,
–
–
–
–
ns
µC
A
rr
R
F S
d
i
/d
t
=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
F
I
rrm
A/µs
Peak rate of fall of reverse
recovery current
di
/
dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.006524
0.013
0.025
0.096
0.117
K/W
0.0004439
0.001662
0.002268
0.006183
0.014
R
R
R
R
C
Ws/K
th1
th2
th3
th4
th1
C
th2
C
th3
C
th4
R
th5
C
th5
0.053
R
C
0.104
th6
th6
External Heatsink
T
j
R
th1
R
th,n
T
case
P
tot
(t)
C
th1
C
th2
C
th,n
T
amb
Page 4
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
1 Power dissipation
=
f
(
T
)
2 Safe operating area
I
=
f
(
V
P
)
DS
tot
C
D
parameter :
D
= 0 ,
T
=25°C
C
10
2
SPP24N60C3
260
W
A
220
200
180
160
140
120
100
80
10
1
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
-1
60
40
20
10
-2
0
0
20
40
60
80 100
120
160
10
0
10
1
10
2
10
3
DS
°C
T
V
V
C
3 Transient thermal impedance
=
f
(
t
)
4 Typ. output characteristic
I
=
f
(
V
);
T
=25°C
Z
thJC
p
D
DS
j
parameter:
D
=
t
/
T
parameter:
t
= 10 µs,
V
p
p
GS
10
0
100
Vgs = 20V
A
K/W
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
80
Vgs = 6V
10
-1
10
-2
10
-3
10
-4
Vgs = 5.5V
70
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
60
50
40
30
20
10
0
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
0
4
8
12
16
20
26
s
t
V
V
p
DS
Page 5
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
5 Typ. output characteristic
I
=
f
(
V
);
T
=150°C
6 Typ. drain-source on resistance
=
f
(
I
)
R
D
DS
j
DS(on)
D
parameter:
t
= 10 µs,
V
parameter:
T
=150°C,
V
p
GS
j
GS
50
1
Vgs = 20V
Vgs = 4V
A
Vgs = 6.5V
Vgs = 6V
Vgs = 4.5V
Vgs = 5V
Ω
Vgs = 5.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
40
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Vgs = 4.5V
Vgs = 6.5V
Vgs = 20V
35
Vgs = 4V
30
25
20
15
10
5
0
0
4
8
12
16
20
26
0
5
10 15 20 25 30 35 40
50
V
V
A
D
I
DS
7 Drain-source on-state resistance
=
f
(
T
)
8 Typ. transfer characteristics
R
I
=
f
(
V
);
V
≥
2 x
I
x
R
DS(on)
j
D
GS
DS
D
DS(on)max
parameter :
I
= 15.4 A,
V
= 10 V
parameter:
t
= 10 µs
D
GS
p
SPP24N60C3
1
100
Tj = 25°C
Ω
A
Tj = 150°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
80
70
60
50
40
30
20
10
0
98%
typ
°C
-60
-20
20
60
100
180
0
1
2
3
4
5
6
7
8
10
V
V
T
GS
j
Page 6
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
9 Typ. gate charge
=
f
(
Q
10 Forward characteristics of body diode
V
)
I
=
f
(V )
GS
Gate
F SD
parameter:
I
= 24.3 A pulsed
parameter:
T
, t
p
= 10 µs
D
j
10
2
SPP24N60C3
SPP24N60C3
16
V
A
12
10
1
0.2
V
DS max
10
0.8
V
DS max
8
6
4
2
0
10
0
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
10
-1
nC
0
20
40
60
80 100
120 140
170
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Avalanche SOA
=
f
(
t
)
12 Avalanche energy
E
=
f
(
T
)
AS
I
AR
AR
j
par.:
T
≤
150 °C
par.:
I
= 10 A,
V
= 50 V
j
D
DD
28
0.9
mJ
A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20
16
12
8
T
j
(START)
=25°C
T
j
=125°C
(START)
4
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
25
50
75
100
150
µs
AR
°C
t
T
j
Page 7
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
13 Drain-source breakdown voltage
=
f
(
T
)
14 Avalanche power losses
P
=
f
(
f
)
AR
V
(BR)DSS
j
parameter:
E
=1mJ
AR
SPP24N60C3
1000
720
V
W
680
660
640
620
600
580
560
540
600
400
200
0
-60
-20
20
60
100
180
10
3
10
4
10
5
10
6
°C
Hz
T
f
j
15 Typ. capacitances
C
=
f
(
V
)
16 Typ.
C
stored energy
oss
E
=
f
(
V
)
DS
oss
DS
parameter:
V
=0V,
f
=1 MHz
GS
10
5
28
pF
Ciss
Coss
Crss
µJ
10
4
10
3
10
2
10
1
10
0
20
16
12
8
4
0
0
100
200
300
400
600
DS
0
100
200
300
400
600
DS
V
V
V
V
Page 8
Rev. 2.
5
200
9
–
12
–
01
SPP24N60C3
Definition of diodes switching characteristics
Page 9
Rev. 2.
5
200
9
–
12
–
01
SP
P
2
4
N60C3
P
G
-TO-220-3-1
Page 1
0
Rev. 2.
5
200
9
–
12
–
01
SP
P
2
4
N60C
3
Page 1
1
Rev. 2.
5
200
9
–
12
–
01
