Infineon-Technologies-SPW47N65C3
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SPW47N65C3
CoolMOS
TM
Power Transistor
Features
Product Summary
V
DS
650
V
• Worldwide best
R
ds,on
in TO247
• Low gate charge
R
DS(on),max
Q
g,typ
0.07
Ω
255 nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
PG-TO247-3-1
Type
Package
Marking
SPW47N65C3
PG-TO247-3-1
47N65C3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
47
Parameter
Symbol Conditions
Unit
I
D
T
C
=25 °C
T
C
=100 °C
T
C
=25 °C
Continuous drain current
A
30
Pulsed drain current
2)
141
1800
I
D,pulse
E
AS
I
D
=3.5 A,
V
DD
=50 V
I
D
=7 A,
V
DD
=50 V
Avalanche energy, single pulse
mJ
A
2),3)
2),3)
E
AR
I
AR
1
7
Avalanche energy, repetitive
t
AR
Avalanche current, repetitive
t
AR
V
DS
=0…480 V
50
±20
MOSFET d
v
/d
t
ruggedness
d
v
/d
t
V/ns
V
V
GS
Gate source voltage
static
±30
AC (
f
>1 Hz)
T
C
=25 °C
P
tot
415
Power dissipation
W
T
j
,
T
stg
-55 … 150
60
Operating and storage temperature
Mounting torque
°C
M3 and M3.5 screws
Ncm
Rev. 1.
2
page 1
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
47
Parameter
Symbol Conditions
Unit
I
S
Continuous diode forward current
Diode pulse current
2)
A
T
C
=25 °C
I
S,pulse
141
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
–
–
–
–
0.3
62
K/W
Thermal resistance, junction –
ambient
R
thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T
sold
–
–
260 °C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS(th)
V
V
GS
=0 V,
I
D
=250 µA
DS
=
V
GS
,
I
D
=2.7 mA
Drain-source breakdown voltage
Gate threshold voltage
650
2.1
–
–
V
3
3.9
V
DS
=600 V,
V
GS
=0 V,
I
DSS
Zero gate voltage drain current
–
0.5
25
–
µA
T
j
=25 °C
V
DS
=600 V,
V
GS
=0 V,
–
–
–
50
–
T
j
=150 °C
I
GSS
V
V
GS
=20 V,
V
DS
=0 V
GS
=10 V,
I
D
=30 A,
Gate-source leakage current
100 nA
R
DS(on)
Drain-source on-state resistance
0.06
0.07
Ω
T
j
=25 °C
V
GS
=10 V,
I
D
=30 A,
–
–
0.17
0.75
–
T
j
=150 °C
R
G
Gate resistance
f
=1 MHz, open drain
–
Ω
Rev. 1.
2
page 2
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
iss
Input capacitance
Output capacitance
–
–
7000
2300
–
–
pF
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
C
oss
Effective output capacitance, energy
related
5)
C
o(er)
–
–
270
490
–
–
V
GS
=0 V,
V
DS
=0 V
to 480 V
Effective output capacitance, time
related
6)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
100
27
–
–
ns
V
V
DD
=400 V,
GS
=10 V,
I
D
=47 A,
R
G
=5.6
Ω
Turn-off delay time
Fall time
–
–
210
14
–
–
Gate Charge Characteristics
Q
gs
Gate to source charge
Gate to drain charge
Gate charge total
–
–
–
–
35
120
255
5.5
–
–
–
–
nC
Q
gd
V
V
DD
=480 V,
I
D
=47 A,
GS
=0 to 10 V
Q
g
V
plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS
=0 V,
I
F
=47 A,
V
SD
Diode forward voltage
–
0.9
1.2
T
j
=25 °C
t
rr
Reverse recovery time
–
–
–
640
19
–
–
–
ns
µC
A
V
R
=480 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
Q
rr
I
rrm
Reverse recovery charge
Peak reverse recovery current
56
1)
J-STD20 and JESD22
2)
Pulse width
t
p
limited by
T
j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
5)
C
o(er)
is a fixed capacitance that gives the same stored energy a
s
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
6)
C
o(tr)
is a fixed capacitance that gives the same charging time a
s
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Rev. 1.
2
page 3
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
1 Power dissipation
2 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
P
tot
=f(
T
C
)
10
3
500
limited by on-state
resistance
400
300
200
100
1 µs
10
2
10
1
10
0
10
-1
10 µs
100 µs
1 ms
10 ms
DC
0
0
10
0
10
1
10
2
10
3
40
80
C
[°C]
120
160
V
DS
[V]
T
3 Max. transient thermal impedance
(thJC)
=f(t
p
)
4 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
Z
parameter:
D=t
p
/
T
parameter:
V
GS
10
0
200
150
100
50
20 V
7 V
6.5 V
0.5
10
-1
0.2
6 V
0.1
0.05
0.02
5.5 V
10
-2
0.01
single pulse
5 V
4.5 V
10
-3
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0
5
10
15
20
25
t
p
[s]
V
DS
[V]
Rev. 1.
2
page 4
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=150 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
DS(on)
=f(
I
D
);
T
j
=150 °C
R
parameter:
V
GS
120
100
80
60
40
20
0
20 V
20 V
10 V
0.7
6.5 V
7 V
6.5 V
6 V
6 V
5.5 V
5.5 V
0.5
5 V
4.5 V
5 V
4 V
0.3
0.1
4.5 V
0
5
10
V
15
DS
[V]
20
25
0
40
80
D
[A]
120
160
I
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
R
DS(on)
=f(
T
j
);
I
D
=30 A;
V
GS
=10 V
0.2
200
150
100
50
25°C
0.16
0.12
98 %
150°C
typ
0.08
0.04
0
0
-50
0
50
100
150
0
2
4
6
8
10
T
j
[°C]
V
GS
[V]
Rev. 1.
2
page 5
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
10 Forward characteristics of reverse diode
I
F
=f(
V
SD
9 Typ. gate charge
GS
=f(
Q
gate
);
I
D
=47 A pulsed
V
)
parameter:
V
DD
parameter:
T
j
10
3
10
120 V
8
6
4
2
0
480 V
10
2
150 °C
25 °C
10
1
150 °C, 98%
25 °C, 98%
10
0
0
0.5
1
1.5
2
0
40
80
120
160
200
240
Q
gate
[nC]
V
SD
[V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS
=f(
T
j
);
I
D
=3.5 A;
V
DD
=50 V
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
2000
1800
1600
1400
1200
1000
800
710
680
650
620
590
600
400
200
0
25
50
75
100
125
150
175
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
Rev. 1.
2
page 6
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
13 Typ. capacitances
14 Typ. Coss stored energy
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
E
oss
=
f
(V
DS
)
10
5
50
10
4
Ciss
40
30
20
10
10
3
Coss
10
2
Crss
10
1
10
0
0
0
0
100
200
300
DS
[V]
400
500
200
400
600
V
V
DS
[V]
Rev. 1.
2
page 7
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
Definition of diode switching characteristics
Rev. 1.
2
page 8
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
PG-TO-247-3-1: Outlines
Rev. 1.
2
page 9
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
SPW47N65C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
.
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.
2
page 10
200
8
-0
2
–
12
Please note the new package dimensions arccording to PCN 2009-134-A
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1
New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in
blue
.
)
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
