ISC-2N3055

Part #ISC-2N3055
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ISC-2N3055
isc
Silicon NPN Power Transistor  
2N3055  
DESCRIPTION  
·
Excellent Safe Operating Area  
·
DC Current Gain-h

FE

=20-70@I

C

= 4A  
·
Collector-Emitter Saturation Voltage-  
: V

CE(sat

)= 1.1 V(Max)@ I

C

= 4A  
·
Complement to Type MJ2955  
·
Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
APPLICATIONS  
·
Designed for general-purpose switching and amplifier  
applications  
ABSOLUTE MAXIMUM RATINGS(T

a

=25
℃
)  
SYMBOL  
V

CBO  

V

CER  

V

CEO  

V

EBO  

I

C  

PARAMETER  
Collector-Base Voltage  
VALUE  
UNIT  
V
100  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
70  
V
60  
V
7
15  
V
Collector Current-Continuous  
Base Current  
A
I

B  

7
A
P

C  

Collector Power Dissipation@T

C

=25
℃
 
115  
W
℃
Operating and Storage Junction  
T
e
mperature Range  
-65~+150  
T

J,

T

stg  

THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.52  
℃
/W  
R

th j-c  

1
isc & iscsemi
is registered trademark  

isc
Silicon NPN Power Transistors  
2N3055  
ELECTRICAL CHARACTERISTICS  
T

C

=25
℃
unless otherwise specified  
SYMBOL  
V

CEO(SUS)  

V

CE
(sat)
-1  

V

CE
(sat)
-2  

V

BE(
on
)  

I

CEO  

PARAMETER  
CONDITIONS  
MIN  
MAX  
UNIT  
V
Collector-Emitter Sustaining Voltage
 
I

C

=30mA ; I

B

=0  
60  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
I

C

= 4A; I

B

= 0.4A  
1.1  
3.0  
1.5  
0.7  
5.0  
70  
V
I

C

= 10A; I

B

= 3.3A  
V
I

C

= 4A ; V

CE

= 4V  
V
V

CE

= 30V; I

B

=0  
mA  
mA  
I

EBO  

V

EB

= 7.0V; I

C

=0  
h

FE-1  

DC Current Gain  
I

C

= 4A ; V

CE

= 4V  
20  
5.0  
h

FE-2  

DC Current Gain  
I

C

= 10A ; V

CE

= 4V  
V

CE

= 40V,t= 1.0s,Nonrepetitive  
I

C

= 0.5A ; V

CE

= 10V;f=1.0MHz  
Second Breakdown Collector  
Current with Base Forward Biased  
2.87  
2.5  
A
I

s/b  

f

T  

Current Gain-Bandwidth Product  
MHz  
2
isc & iscsemi
is registered trademark  

isc
Silicon NPN Power Transistors  
2N3055  
Notice
:
 
ISC reserves the rights to make changes of the content herein the datasheet at any time without  
notification. The information contained herein is presented only as a guide for the applications of  
our products.  
ISC products are intended for usage in general electronic equipment. The products are not designed  
for use in equipment which require specialized quality and/or reliability, or in equipment which  
could have applications in hazardous environments, aerospace industry, or medical field. Please  
contact us if you intend our products to be used in these special applications.  
ISC makes no warranty or guarantee regarding the suitability of its products for any particular  
purpose, nor does ISC assume any liability arising from the application or use of any products, and  
specifically disclaims any and all liability, including without limitation special, consequential or  
incidental damages.  
3
isc & iscsemi
is registered trademark