ISC-2SD1047

Part #ISC-2SD1047
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ISC-2SD1047
isc
Silicon NPN Power Transistor  
2SD1047  
DESCRIPTION  
·
Collector-Emitter Breakdown Voltage-  
: V

(BR)CEO

= 140V(Min)  
·
Good Linearity of h

FE  

·
High Current Capability  
·
Wide Area of Safe Operation  
·
Complement to Type 2SB817  
·
Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
APPLICATIONS  
·
Recommend for 60W audio frequency amplifier output  
stage applications  
ABSOLUTE MAXIMUM RATINGS(T

a

=25
℃
)
 
SYMBOL  
V

CBO  

V

CEO  

V

EBO  

I

C  

PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
160  
140  
V
6
V
Collector Current-Continuous  
Collector Current-Pulse  
12  
A
I

CP  

15  
A
Collector Power Dissipation  
@ T

C

=25
℃
 
P

C  

100  
W
℃
℃
T

J  

Junction
T
emperature  
150  
Storage
T
emperature Range  
-40~150  
T

stg  

1
isc & iscsemi
is registered trademark  

isc
Silicon NPN Power Transistor  
2SD1047  
ELECTRICAL CHARACTERISTICS  
T

C

=25
℃
unless otherwise specified  
SYMBOL  
V

(BR)CEO  

V

(BR)CBO  

V

(BR)EBO  

V

CE
(sat)  

V

BE
(on)  

I

CBO  

PARAMETER  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base -Emitter On Voltage  
Collector Cutoff Current  
CONDITIONS  
I

C

= 30mA ; R

BE

=
∞  
I

C

=1mA; I

E

= 0  
MIN  
140  
160  
6
TY
P
.  
MAX  
UNIT  
V
V
I

E

= 5mA; I

C

= 0  
V
I

C

= 5.0A; I

B

= 0.5A  
I

C

= 1A ; V

CE

= 5V  
V

CB

= 80V ; I

E

= 0  
V

EB

= 4V; I

C

= 0  
0.6  
2.5  
1.5  
V
V
100  
100  
200  
μ
A  
μ
A  
I

EBO  

Emitter Cutoff Current  
h

FE-1  

DC Current Gain  
I

C

= 1A ; V

CE

= 5V  
I

C

= 6A ; V

CE

= 5V  
I

E

= 0;V

CB

= 10V;f

test

= 1.0MHz  
I

C

= 1A ; V

CE

= 5V  
60  
20  
h

FE-2  

DC Current Gain  
C

OB  

Output Capacitance  
210  
15  
pF  
f

T  

Current-Gain—Bandwidth Product  
MHz  
Switching times  
Turn-on Time  
0.26  
6.88  
0.68  
μ
s  
μ
s  
μ
s  
t

on  

t

stg  

t

f  

I

C

= 1A ,R

L

= 20
Ω
,  
Storage Time  
Fall Time  
I

B1

= I

B2

= 0.1A,V

CC

=
20V  
h

FE-1

Classifications  
D
E
60-120  
100-200  
NOTICE
:
 
ISC reserves the rights to make changes of the content herein the datasheet at any time without  
notification. The information contained herein is presented only as a guide for the applications of  
our products.  
ISC products are intended for usage in general electronic equipment. The products are not designed  
for use in equipment which require specialized quality and/or reliability, or in equipment which  
could have applications in hazardous environments, aerospace industry, or medical field. Please  
contact us if you intend our products to be used in these special applications.  
ISC makes no warranty or guarantee regarding the suitability of its products for any particular  
purpose, nor does ISC assume any liability arising from the application or use of any products, and  
specifically disclaims any and all liability, including without limitation special, consequential or  
incidental damages.  
2
isc & iscsemi
is registered trademark