ISC-2SD798

Part #ISC-2SD798
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ISC-2SD798
isc
Silicon NPN Darlington Power Transistor  
2SD798  
DESCRIPTION  
·
Collector-Emitter Sustaining Voltage-  
: V

CEO(SUS)

= 300V(Min)  
·
Collector-Emitter Saturation Voltage-  
: V

CE(sat)

= 2.0V(Max) @I

C

= 4A  
·
High DC Current Gain  
: h

FE

= 1500(Min) @ I

C

= 2A, V

CE

= 2V  
·
Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
APPLICATIONS  
·
Designed for use in high-voltage switching igniter  
applications  
ABSOLUTE MAXIMUM RATINGS(T

a

=25
℃
)
 
SYMBOL  
V

CBO  

V

CEO  

V

EBO  

I

C  

PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
600  
300  
5
UNIT  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
6
A
I

B  

1.0  
A
Collector Power Dissipation  
@ T

C

=25
℃
 
P

C  

30  
W
℃
℃
T

J  

Junction
T
emperature  
150  
-55~150  
Storage
T
emperature Range  
T

stg  

THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
4.16  
℃
/W  
R

th j-c  

1
isc & iscsemi
is registered trademark  

isc
Silicon NPN Darlington Power Transistor  
2SD798  
ELECTRICAL CHARACTERISTICS  
T

C

=25
℃
unless otherwise specified  
SYMBOL  
V

CEO(SUS)  

V

CE(
sat
)  

V

BE(
sat
)  

I

CBO  

PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
CONDITIONS  
I

C

= 30mA ; L= 40mH  
I

C

= 4A; I

B

= 40mA  
MIN  
TY
P
.  
MAX  
UNIT  
300  
V
V
2.0  
2.5  
500  
2
I

C

= 4A; I

B

= 40mA  
V
V

CB

= 600V; I

E

= 0  
μ
A  
mA  
I

EBO  

V

EB

= 5V; I

C

=0  
h

FE -1  

DC Current Gain  
I

C

= 2A ; V

CE

= 2V  
1500  
200  
h

FE -2  

DC Current Gain  
I

C

= 4A ; V

CE

= 2V  
C

OB  

Output Capacitance  
35  
pF  
I

E

= 0 ; V

CB

= 50V;f

test

= 1.0MHz  
Switching times  
Turn-on Time  
1.0  
8.0  
5.0  
μ
s  
μ
s  
μ
s  
t

on  

t

stg  

t

f  

I

C

= 4A , I

B1

= I

B2

= 40mA  
R

L

= 25
Ω
; V

CC

≈
100V  
Storage Time  
Fall Time  
NOTICE
:
 
ISC reserves the rights to make changes of the content herein the datasheet at any time without  
notification. The information contained herein is presented only as a guide for the applications of  
our products.  
ISC products are intended for usage in general electronic equipment. The products are not designed  
for use in equipment which require specialized quality and/or reliability, or in equipment which  
could have applications in hazardous environments, aerospace industry, or medical field. Please  
contact us if you intend our products to be used in these special applications.  
ISC makes no warranty or guarantee regarding the suitability of its products for any particular  
purpose, nor does ISC assume any liability arising from the application or use of any products, and  
specifically disclaims any and all liability, including without limitation special, consequential or  
incidental damages.  
2
isc & iscsemi
is registered trademark