Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2N5551-TA-RANGE-200-300
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2N5551
TRANSISTOR (NPN)
1. EMITTER
2. BASE
FEATURES
z
General Purpose Switching Application
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
180
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
160
V
6
V
Collector Current
0.6
A
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
625
mW
℃
/
W
℃
R
θ
JA
T
j
200
150
T
stg
Storage
T
e
mperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
180
160
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100µA,I
E
=0
*
V
(BR)CEO
I
C
=1mA,I
B
=0
V
V
(BR)EBO
I
CBO
I
E
=10µA,I
C
=0
V
V
CB
=120
V
,
I
E
=0
50
50
nA
nA
Emitter cut-off current
I
EBO
V
EB
=4
V
,
I
C
=0
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
CE
=5
V
,
I
C
=1mA
V
CE
=5
V
,
I
C
=10mA
V
CE
=5
V
,
I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CB
=10
V
,
I
E
=0, f=1MHz
V
BE
=0.5
V
,
I
C
=0, f=1MHz
V
CE
=10V,I
C
=10mA, f=100MHz
80
80
50
DC current gain
300
0.15
0.2
1
V
V
（
）
1
2
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
（
）
V
BE (sat)
V
BE (sat)
C
ob
V
（
）
1
2
1
V
（
）
6
pF
pF
MHz
Collector output capacitance
Emitter input capacitance
Transition frequency
20
300
C
ib
f
T
100
*Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%.
CLASSIFICATION OF h
FE(2)
RANK
A
B
C
80-100
RANGE
100-150
150-200
200-300
B,Jun,2012
Typical Characteristics
2N5551
I
C
h
FE
——
Static Characteristic
18
15
12
9
500
90uA
80uA
70uA
60uA
50uA
40uA
30uA
I
B
=20uA
COMMON EMITTER
V
CE
=5V
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
100
6
3
0
10
0
2
4
6
8
10
12
1
10
100
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
——
I
C
V
CEsat
—— I
C
1.0
0.8
0.6
0.4
0.2
0.3
β
=10
β
=10
0.1
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
0.01
100
0.1
1
10
100
1
10
100
200
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
BE
—— I
C
V
CB
/
V
EB
C
ob
/ C
ib
——
200
COMMON EMITTER
V
CE
=5V
f=1MHz
I
E
=0 / I
C
=0
100
10
1
T
a
=25
℃
C
ib
T
a
=100
℃
T
a
=25
℃
10
C
ob
1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
I
C
f
T
——
P
C
—— T
a
750
150
V
CE
=10V
T
a
=25
℃
625
500
375
250
125
0
100
50
1
10
20
30
0
25
50
75
100
125
150
3
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
B,Jun,2012
