Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2N7002V
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ANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate
MOSFE
T
S
2N7002V
MOSFET (N-Channel)
I
D
V
(BR)DSS
R
DS(on)
MAX
SOT-563
@
6
2.
5
Ω 10V
5
V
6
0
4
115
m
A
@
3
Ω 5V
1
2
3
FEATURE
APPLICATION
z
Load Switch for Portable Devices
DC/DC Converter
∙
Dual N-channel MOSFET
∙
Low on-resistance
z
∙
Low gate threshold voltage
∙
Low input capacitance
∙
Fast switching speed
∙
Low input/output leakage
M
ARKING
Equivalent Circuit
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Unit
V
V
Symbol
V
DS
V
G
S
I
D
Parameter
Value
60
±
2
0
Drain-Source voltage
Gate
-Source voltage
Drain Current
1
1
5
mA
mW
℃
P
D
Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
150
T
J
150
T
stg
-55-150
℃
Rev
.
– 1.0
1
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Parameter
Symbol
Test
c
o
nditions
V
GS
=0
V
,
I
D
=
25
0
µ
A
V
DS
=V
GS
, I
D
=250
µ
A
V
DS
=0
V
,
V
GS
=±2
0
V
V
DS
=60
V
,
V
GS
=0 V
V
GS
=10
V
,
V
DS
=7 V
V
GS
=10
V
,
I
D
=500mA
V
GS
=5
V
,
I
D
=50mA
V
DS
=10
V
,
I
D
=200mA
V
GS
=10
V
,
I
D
=500mA
V
GS
=5
V
,
I
D
=50mA
M
in
60
T
yp
Max
Unit
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
(BR)DSS
V
th(GS)
l
GSS
V
1.6
2.5
±80
80
1
Gate-body Leakage
nA
nA
Zero Gate Voltage Drain Current
On-state Drain Current
I
DSS
mA
I
D(ON)
500
80
2.
5
0.9
Ω
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
r
DS(0n)
g
fs
1.1
3
m
S
V
3.75
0.375
1.2
50
V
DS(on)
V
V
Diode Forward Voltage
Input Capacitance
V
SD
C
iss
I
S
=115mA, V
GS
=0 V
0.55
pF
V
DS
=25
V
,
V
GS
=0
V
,
f
=1MHz
Output Capacitance
C
OSS
C
rSS
25
Reverse Transfer Capacitance
SWITCHING TIME
5
t
d(on)
t
d(off)
20
40
V
DD
=25
V
, R
L
=50
Ω
Turn-on Time
Turn-off Time
ns
I
D
=500mA,V
GEN
=10 V
R
G
=25
Ω
Rev
.
– 1.0
2
Typical Characteristics
Transfer Characteristics
Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
T =25
℃
T
a
=25
℃
V
GS
=10V,9V,8V,7V,6V
a
V
GS
=5V
Pulsed
Pulsed
V
GS
=4V
V
GS
=3V
0
1
2
3
4
5
0
2
4
6
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
R
DS(ON)
——
I
D
R
DS(ON)
—— V
GS
3
2
1
0
6
4
2
0
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=5V
I
D
=500mA
I
D
=50mA
V
GS
=10V
0.0
0.2
0.4
0.6
0.8
1.0
0
6
12
18
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
2
T
a
=25
℃
1
Pulsed
0.3
0.1
0.03
0.01
3E-3
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
Rev
.
– 1.0
3
SO
T
–
56
3 Package Outline Dimensions
SO
T
–
56
3 Suggested Pad Layout
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
Rev
.
– 1.0
4
SO
T
–
56
3 Tap
e
a
nd Reel
SOT-563 Embossed
Carrier Tape
Packaging Description:
SOT-563 parts are shipped in tape. The carrier
tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a multilayer
film (Heat Activated Adhesive in nature) primarily
composed of polyester film, adhesive layer, sealant,
and anti-static sprayed agent. These reeled parts in
standard option are shipped with 3,000 units per 7″
or 17.8cm diameter reel. The reels are clear in color
and is made of polystyrene plastic (anti-static
coated).
P0
P1
C
A
A
A
P
A-A
Dimensions are in millimeter
Pkg type
SOT-563
d
P0
A
B
C
E
F
P
P1
W
1.78
1.78
0.69
Ø1.50
1.75
3.50
4.00
4.00
2.00
8.00
SOT-563 Tape
Leader and Trailer
Trailer Tape
Leader Tape
Components
50±2 Empty Pockets
100±2 Empty Pockets
SOT-563 Reel
D
W2
3000
2500
1500
1000
500
W1
Dimensions are in millimeter
Reel Option
7”Dia
D
D1
D2
G
H
I
W1
W2
Ø178.00
54.40
13.00
R78.00
R25.60
R6.50
9.50
12.30
Box Size(mm)
203×203×195
Carton Size(mm)
438×438×220
G.W.(kg)
REEL
Reel Size
7 inch
Box
30,000 pcs
Carton
120,000 pcs
3000 pcs
Rev
.
– 1.0
5
