Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SA1576A-RANGE-180-390
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
JC
E
T
SOT-323
2SA1576A
TRANSISTOR (PNP)
1. BASE
FEATURES
2. EMITTER
z
Excellent h
FE
linearity
3. COLLECTOR
z
Complements the 2SC4081
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
-60
V
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-6
Collector Current
-150
200
mA
mW
℃
/W
℃
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
Junction
T
e
m
perature
P
C
R
ΘJA
T
j
625
150
Storage
T
e
m
perature
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25 unless
otherwise specified)
℃
Parameter
Symbol
T
e
st conditions
Min
-60
-50
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=-50
μ
A,I
E
=0
V
(BR)CEO
I
C
=-1mA,I
B
=0
V
(BR)EBO
I
E
=-50
μ
A,I
C
=0
V
V
I
CBO
I
EBO
h
FE
V
CB
=-60
V
,
I
E
=0
-0.1
-0.1
560
-0.5
μ
A
μ
A
Emitter cut-off current
V
EB
=-6
V
,
I
C
=0
DC current gain
V
CE
=-6
V
,
I
C
=-1mA
120
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
I
C
=-50mA,I
B
=-5mA
V
CE
=-12
V
,
I
C
=-2mA,f=30MHz
V
CB
=-12
V
,
I
E
=0,f=1MHz
V
140
4
MHz
pF
Collector output capacitance
C
ob
5
CLASSIFICATION OF
h
FE
Rank
Q
R
180-390
FR
S
120-270
FQ
270-560
FS
Range
Marking
1
A
B,
J
S
u
e
n
p
,
,
2
2
0
0
1
1
4
4
Typical Characteristics
I
C
h
FE
——
Static Characteristic
-7
-6
-5
-4
-3
-2
-1
-0
1000
100
10
COMMON
EMITTER
T
a
=25
℃
-20uA
-18uA
-16uA
T
a
=100
℃
-14uA
-12uA
-10uA
T
a
=25
℃
-8uA
-6uA
-4uA
I
B
=-2uA
COMMON EMITTER
CE
= -6V
V
-0
-2
-4
-6
-8
-10
-12
-1
-10
-100 -150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
BEsat
——
I
C
V
CEsat
—— I
C
-300
-200
-100
-1000
-800
-600
-400
-200
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
-0
-1
-10
-100 -150
-0.1
-1
-10
-100
-150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
f
T
——
C
ob
/ C
ib
——
I
C
V
CB
/
V
EB
1000
50
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
℃
10
C
ib
100
C
ob
V
CE
=-12V
T
a
=25
℃
1
-0.1
10
-1
-10
-1
-10
-30
-20
COLLECTOR CURRENT
I
C
(mA)
REVERSE BIAS VOLTAGE
V
(V)
P
C
—— T
a
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
A
B,
J
S
u
e
n
p
,
,
2
2
0
0
1
1
4
4
SO
T
-323 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
0.650 TYP
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
SO
T
-323 Suggested Pad Layout
3
A
B,
J
S
u
e
n
p
,
,
2
2
0
0
1
1
4
4
