Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SA1662-RANGE-120-240
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89
-3L
Plastic-Encapsulate Transistors
SOT-89
-3L
2SA1662
TRANSISTOR (PNP)
1. BASE
FEATURES
Complementary to KTC4374
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-80
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
-0.4
0.5
A
P
C
W
℃
℃
T
J
150
T
stg
-55-150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
M
in
-80
-80
-5
T
yp
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=-1mA,I
E
=0
V
(BR)CEO
I
C
=-10mA,I
B
=0
V
(BR)EBO
I
E
=-1mA,I
C
=0
V
V
I
CBO
I
EBO
V
CB
=-80
V
,
I
E
=0
V
EB
=-5
V
,
I
C
=0
-0.1
μ
A
μ
A
Emitter cut-off current
-0.1
240
h
FE(1)
h
FE(2)
V
CE
=-2
V
,
I
C
=-50mA
V
CE
=-2
V
,
I
C
=-200mA
70
40
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE
f
T
I
C
=-200mA,I
B
=-20mA
V
CE
=-2
V
,
I
C
=-5mA
-0.4
-0.8
V
V
-0.55
Transition frequency
V
CE
=-10
V
,
I
C
=-10mA
V
CB
=-10
V
,
I
E
=0,f=1MHz
120
14
MHz
pF
Collector output capacitance
C
ob
CLASSIFICATION OF
h
FE(1)
O
Y
Rank
70-140
FO
120-240
Range
Marking
FY
A,Jun,2011
