Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SC2060
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SC2060 |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SC2060 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
JC
E
T
2SC2060
TRANSISTOR (NPN)
TO-92L
FEATURE
1. EMITTER
z
z
z
Power
D
issipation P
CM
: 0.75
W (T
a
=25
℃
)
Low
S
aturation
V
oltage (V
CE(sat)
=0.15V at 500mA)
Complementary
P
air with 2SA934
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
40
Unit
V
Collector-base voltage
Collector-Emitter Voltage
Emitter-Base Voltage
32
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
1
A
P
C
750
150
-55-150
mW
T
J
℃
℃
T
stg
Storage
T
e
mperature
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
Test
conditions
M
in
40
32
5
M
ax
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
= 100
μ
A , I
E
=0
I
C
= 1mA ,
I
B
=0
I
E
= 100
μ
A, I
C
=0
V
CB
=20V ,
I
E
=0
V
V
0.5
0.1
400
0.4
μ
A
μ
A
Emitter cut-off current
I
EBO
V
EB
=4V ,
I
C
=0
DC current gain
h
FE
V
CE
=3
V
,
I
C
= 100mA
I
C
= 500m A, I
B
= 50mA
V
CE
=5
V
,
I
E
=-50mA
V
CB
=10
V
,
I
E
=0,f=1MHz
80
50
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
V
MHz
pF
Collector output capacitance
C
ob
30
1
A,Jun,2014
C,Mar,2016
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
3.750
1.280
0.380
0.620
0.350
4.750
4.000
7.850
Max.
4.050
1.580
0.550
0.780
0.450
5.050
Min.
0.148
0.050
0.015
0.024
0.014
0.187
0.157
0.309
Max.
0.159
0.062
0.022
0.031
0.018
0.199
A
A1
b
b1
c
D
D1
E
8.150
0.321
e
1.270 T
Y
P
.
0.050 T
Y
P
.
e1
L
Φ
h
2.440
13.800
2.640
14.200
1.600
0.300
0.096
0.543
0.104
0.559
0.063
0.012
0.000
0.000
C,Mar,2016
2
