Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SC2655-TA-RANGE-120-240
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SC2655-TA-RANGE-120-240 |
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ANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92
L
Plastic-Encapsulate Transistors
TO-92L
2SC2655
TRANSISTOR (NPN)
FEATURES
1.EMITTER
z
z
z
Low
S
aturation
V
oltage: V
CE(sat)
=0.5V(Max)(I
C
=1A)
High
S
peed
S
witching
T
ime: t
stg
=1
μ
s(Typ.)
Complementary to 2SA1020
2.COLLECTOR
3.BASE
ꢀꢁꢂꢃꢄꢅꢆ
Equivalent Circuit
C2
655
,!ꢀ-ꢁꢂꢀꢃꢂꢄ.ꢀꢃ
Soli
d
do
t
=
G
reen moldin
g
c
ompound device,
C2655
if none, the normal device
ꢀ
ꢀꢀꢀ
///,ꢅꢄ.ꢀ
ꢀ
ORDERING INFORMATION
Part Number
2SC2
655
Package
TO-92L
TO-92L
Packing Method
Pack Quantity
500pcs/Bag
Bulk
2SC2
655
-TA
T
a
pe
2000pcs/Box
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Symbol
Unit
V
Collector-Base Voltage
50
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
2
V
Collector Current –Continuous
Collector Power Dissipation
Operation Junction
and Storage Temperature Range
A
P
C
0.9
W
℃
T
J
,
T
stg
-55-150
1
Rev
.
–
2.0
ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ
T =25
unless otherwise specified
G
a
Parameter
Symbol
T
e
st conditions
M
in
50
50
5
T
yp
Max
U
nit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100
μ
A,I
E
=0
V
(BR)CEO
I
C
=10mA,I
B
=0
V
V
(BR)EBO
I
E
=100
μ
A,I
C
=0
V
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
V
CB
=50
V
,
I
E
=0
1
μ
A
μ
A
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
1
V
CE
=2
V
,
I
C
=500mA
V
CE
=2
V
,
I
C
=1.5A
I
C
=1A,I
B
=0.05A
I
C
=1A,I
B
=0.05A
V
CE
=2
V
,
I
C
=0.5A
V
CB
=10
V
,
I
E
=0,f=1MHz
70
40
240
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.5
1.2
V
V
100
MHz
pF
Collector output capacitance
Tune on Time
C
ob
30
0.1
1
t
on
V
CC
=30
V
,
Ic=1A,
Switch time
μ
s
Storage Time
Fall Time
t
stg
I
B1
=-I
B2
=0.05A
t
f
0.1
CLASSIFICATION OF h
FE
(1)
Rank
O
Y
Range
70-140
120-240
2
Rev
.
–
2.0
Typical Characteristics
h
FE
——
I
C
Static Characteristic
1.2
400
300
200
100
0
COMMON EMITTER
T
a
=25
℃
COMMON EMITTER
CE
=2V
5mA
V
4.5mA
4mA
1.0
T
a
=100
℃
T
a
=25
℃
3.5mA
3mA
0.8
0.6
0.4
0.2
0.0
2.5mA
2mA
1.5mA
1mA
I
B
=0.5mA
0
2
4
6
8
10
0.01
0.1
1
2
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
V
CEsat
——
I
C
V
BEsat
—— I
C
0.4
0.3
0.2
0.1
0.0
1.2
0.8
0.4
0.0
β
=20
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=20
0.01
0.1
1
0.01
0.1
1
2
2
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
V
CB
/ V
EB
C
ob
/ C
ib
——
I
C
—— V
BE
1000
100
10
2
COMMON EMITTER
V
CE
=2V
f=1MHz
I
E
=0/ I
C
=0
1
C
ib
T
a
=25
℃
C
ob
T
a
=100
℃
T
a
=25
℃
0.1
0.01
0.2
1
0.1
20
0.4
0.6
0.8
1.0
1.2
1
10
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
Pc —— Ta
1000
800
600
400
200
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
Ta (
℃
)
3
Rev
.
–
2.0
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
3.750
1.280
0.380
0.620
0.350
4.750
4.000
7.850
Max.
4.050
1.580
0.550
0.780
0.450
5.050
Min.
0.148
0.050
0.015
0.024
0.014
0.187
0.157
0.309
Max.
0.159
0.062
0.022
0.031
0.018
0.199
A
A1
b
b1
c
D
D1
E
8.150
0.321
e
1.270 T
Y
P
.
0.050 T
Y
P
.
e1
L
Φ
h
2.440
13.800
2.640
14.200
1.600
0.300
0.096
0.543
0.104
0.559
0.063
0.012
0.000
0.000
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
4
Rev
.
–
2.0
