Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SC2884-RANGE-160-320
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SC2884
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
z
z
z
Small Flat Package
Complementary to 2SA1204
High DC Current Gain
3. EMITTER
APPLICATIONS
z
Audio Frequency Amplifier
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
35
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current
800
mA
mW
℃
/
W
℃
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
500
R
θ
JA
T
j
250
150
T
stg
Storage
T
e
mperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
=1mA,I
E
=0
Min
35
30
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=10mA,I
B
=0
V
I
E
=1mA,I
C
=0
V
V
CB
=35
V
,
I
E
=0
0.1
0.1
320
µA
µA
Emitter cut-off current
I
EBO
V
EB
=5
V
,
I
C
=0
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
V
CE
=1
V
,
I
C
=100mA
V
CE
=1
V
,
I
C
=700mA
I
C
=500mA,I
B
=20mA
V
CE
=1
V
,
I
C
=10mA
V
CE
=5V,I
C
=10mA
V
CB
=10
V
,
I
E
=0, f=1MHz
100
35
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
0.5
0.8
V
V
0.5
f
T
120
13
MHz
pF
Transition frequency
Collector output capacitance
C
ob
CLASSIFICATION OF h
FE(1)
O
Y
RANK
RANGE
100
–
200
PO1
160
–
320
PY1
MARKING
A,Nov,2010
