Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SC4672-RANGE-120-270
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SC4672
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
z
Low Saturation Voltage
Excellent h
FE
Characteristics
Complements the 2SA1797
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
Unit
V
60
50
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
2
A
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
500
250
150
-55~+150
mW
℃
/
W
℃
R
θ
JA
T
j
T
stg
Storage
T
e
mperature
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
=50µA,I
E
=0
Min
60
50
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=1mA,I
B
=0
V
I
E
=50µA,I
C
=0
V
V
CB
=60
V
,
I
E
=0
0.1
0.1
µA
µA
Emitter cut-off current
I
EBO
V
EB
=5
V
,
I
C
=0
DC current gain
h
FE
V
CE
=2
V
,
I
C
=500mA
I
C
=1A,I
B
=50mA
82
390
0.35
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
V
V
CE
=2V,I
C
=0.5A, f=100MHz
V
CB
=10
V
,
I
E
=0, f=1MHz
210
25
MHz
pF
Collector output capacitance
C
ob
CLASSIFICATION OF
h
FE
RANK
P
Q
R
RANGE
82
–
180
120
–
270
DKQ
180
–
390
DKR
MARKING
DKP
A,Feb,2011
Typical Characterisitics
2SC4672
I
C
h
FE
——
Static Characteristic
1.0
0.8
0.6
0.4
0.2
0.0
300
200
100
0
COMMON EMITTER
V
CE
=2V
COMMON EMITTER
T
a
=25
℃
4.0mA
3.6mA
T
a
=100
℃
3.2mA
2.8mA
2.4mA
T
a
=25
℃
2.0mA
1.6mA
1.2mA
0.8mA
I
B
=0.4mA
0
1
2
3
4
0.1
1
2
0.3
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
V
BEsat
—— I
C
V
CEsat
—— I
C
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.0
0.8
0.6
0.4
0.2
β
=20
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=20
0.1
1
0.1
1
2
0.3
2
0.3
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/ V
EB
1000
100
10
2
COMMON EMITTER
V
CE
=2V
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
1
C
ob
T
a
=100
℃
T
a
=25
℃
0.3
0.1
0.2
1
0.1
0.4
0.6
0.8
1.0
1.2
0.3
1
3
10
20
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
P
C
—— T
a
600
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Feb,2011
