Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SD2391-RANGE-120-270
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89
-3L
Plastic-Encapsulate Transistors
2SD2391
TRANSISTOR (NPN)
SOT-89
-3L
FEATURES
Low V
CE(sat)
1.BASE
2.COLLECTOR
3.EMITTER
Marking: DT
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
60
Unit
V
60
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
2
A
P
C
0.5
W
℃
℃
T
J
150
-55-150
T
stg
Storage
T
e
mperature
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
60
60
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=50
μ
A,I
E
=0
V
(BR)CEO
I
C
=1mA,I
B
=0
V
(BR)EBO
I
E
=50
μ
A,I
C
=0
V
V
I
CBO
I
EBO
V
CB
=50
V
,
I
E
=0
0.1
0.1
μ
A
μ
A
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
h
FE(1)
h
FE(2)
V
CE(sat)
f
T
V
CE
=2
V
,
I
C
=0.5A
120
45
270
DC current gain
V
CE
=2
V
,
I
C
=1.5A
Collector-emitter saturation voltage
Transition frequency
I
C
=1A,I
B
=50mA
0.35
V
V
CE
=2
V
,
I
C
=0.5A, f=100MHz
V
CB
=10
V
,
I
E
=0, f=1MHz
210
21
MHz
pF
Output capacitance
C
ob
1
D,Sep,2017
Typical Characteristics
h
FE
—— I
C
Static Characteristic
1.5
1.0
0.5
0.0
400
300
200
100
0
V
CE
= 2V
COMMON
EMITTER
T
a
=25
℃
5mA
T
a
=100
o
C
4.5mA
4mA
3.5mA
3.mA
2.5mA
2mA
T
a
=25
o
C
1.5mA
1mA
I
B
=0.5mA
2000
0
1
2
3
4
5
6
1
10
100
1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
1000
800
600
400
200
400
300
200
100
0
β
=20
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=20
2000
0.1
1
10
100
1000 2000
0.1
1
10
100
1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/
V
EB
1000
2000
f=1MHz
I
E
=0 / I
C
=0
1000
100
10
V
CE
=2V
50
T
a
=25
o
C
C
ib
T
a
=100
o
C
100
C
ob
T
a
=25
℃
1
0.1
200
10
0.1
400
600
800
1000
1200
1
10
20
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
V
BE
(mV)
P
c
—— T
a
600
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
D,Sep,2017
SO
T
–
89-3L
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.600
0.520
0.580
0.440
4.600
Min
Max
0.063
0.020
0.023
0.017
0.181
A
b
b1
c
1.400
0.320
0.400
0.350
4.400
0.055
0.013
0.016
0.014
0.173
D
D1
E
E1
e
e1
L
1.550 REF.
0.061 REF.
2.300
3.940
2.600
4.250
0.091
0.155
0.102
0.167
1.500 T
Y
P
.
3.000 T
Y
P
.
0.060 T
Y
P
.
0.118 T
Y
P
.
0.900
1.200
0.035
0.047
SO
T
–
89-3L
Suggested Pad Layout
3
D,Sep,2017
