Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SD667A
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SD667A |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–2SD667A |
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92
MOD
Plastic-Encapsulate Transistors
TO-92MOD
2SD667,2SD667A
TRANSISTOR (NPN)
1.
EMITTER
FEATURES
z
Low
F
requency
P
ower
A
mplifier
2.
COLLECTOR
3.
BASE
z
Complementary
P
air with 2SB647/A
ꢀꢁꢂꢃꢄꢅꢆ
Equivalent Circuit
D667
,!ꢀ-ꢁꢂꢀꢃꢂꢄ.ꢀꢃ
Soli
d
do
t
=
G
reen moldin
g
c
ompound device,
if none, the normal device
D667
ꢀ
ꢀꢀꢀ
///,ꢅꢄ.ꢀ
ꢀ
D667A
,!ꢀ-ꢁꢂꢀꢃꢂꢄ.ꢀꢃ
Soli
d
do
t
=
G
reen moldin
g
c
ompound device,
if none, the normal device
D667A
ꢀ
ꢀꢀꢀ
///,ꢅꢄ.ꢀ
ꢀ
ORDERING INFORMATION
Part Number
Package
TO-92MOD
TO-92MOD
TO-92MOD
TO-92MOD
Packing Method
Pack Quantity
2S
D667
Bulk
T
a
pe
Bulk
T
a
pe
500pcs/Bag
2000pcs/Box
500pcs/Bag
2000pcs/Box
2S
D667
-TA
2S
D667A
2S
D667A
-TA
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Value
120
80
Unit
V
V
CEO
2SD667
V
2SD667A
100
5
V
EBO
I
C
Emitter-Base Voltage
V
A
Collector Current -Continuous
Collector Power Dissipation
1
P
C
900
-55-150
mW
℃
T
J
,
T
stg
Operation Junction
and Storage Temperature Range
1
Rev
.
–
2.0
ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ
T =25
unless otherwise specified
G
a
Parameter
Symbol
T
e
st conditions
M
in
120
80
T
yp
Max
U
nit
V
Collector-base breakdown voltage
V
(BR)CBO
I
C
=10
μ
A,I
E
=0
2SD667
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA,I
B
=0
2SD667A
100
5
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
E
=10
μ
A,I
C
=0
V
I
CBO
I
EBO
V
CB
=100
V
,
I
E
=0
V
EB
=4
V
,
I
C
=0
10
10
μ
A
μ
A
2SD667
60
60
30
320
3
20
h
FE(1)
V
CE
=5
V
,
I
C
=150mA
DC current gain
2SD667A
h
FE(2)
V
CE(sat)
V
BE
V
CE
=5
V
,
I
C
=500mA
I
C
=500mA,I
B
=50mA
V
CE
=5
V
,
I
C
=150mA
V
CE
=5
V
,
I
C
=150mA
V
CB
=10
V
,
I
E
=0,f=1MHz
Collector-emitter saturation voltage
Base-emitter voltage
1
V
V
1.5
Transition frequency
f
T
140
12
MHz
pF
Collector output capacitance
C
ob
CLASSIFICATION OF
h
FE(1)
Rank
B
C
D
2SD667
Range
60-120
60-120
100-200
100-200
160-320
2SD667A
160-320
2
Rev
.
–
2.0
Typical Characteristics
h
FE
—— I
C
Static Characteristic
300
1000
100
10
T
a
=100
o
C
1.0mA
0.9mA
0.8mA
V
CE
= 5V
COMMON
EMITTER
T
a
=25
℃
0.7mA
200
0.6mA
T
a
=25
o
C
0.5mA
0.4mA
0.3mA
100
0.2mA
I
B
=0.1mA
0
0
2
4
6
8
10
12
1
10
100
1000
1000
20
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
1000
800
600
400
200
0
200
150
100
50
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
0
0.1
1
10
100
1000
0.1
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
——
f
T
——
V
CB
/
V
EB
I
C
250
1000
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
200
150
100
50
100
10
1
C
ib
C
ob
V
CE
=5V
T
a
=25
o
C
0
0
20
40
60
80
100
0.1
1
10
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT
I
C
(mA)
P
c
—— T
a
I
C
—— V
BE
1000
100
10
1200
1000
800
600
400
200
0
VCE=5V
Ta=100
o
C
Ta=25
℃
1
0.1
200
400
600
800
1000
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
BASE-EMITTER VOLTAGE
V
BE
(mV)
a
3
Rev
.
–
2.0
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
4.800
1.730
0.440
0.940
0.350
5.900
4.000
8.500
Max.
5.000
2.030
0.600
1.100
0.450
6.100
Min.
0.189
0.068
0.017
0.037
0.014
0.232
0.157
0.335
Max.
0.197
0.080
0.024
0.043
0.018
0.240
A
A1
b
b1
c
D
D1
E
8.700
0.343
e
1.500 T
Y
P
.
0.059 T
Y
P
.
e1
L
Φ
h
2.900
13.800
3.100
14.200
1.600
0.380
0.114
0.543
0.122
0.559
0.063
0.015
0.000
0.000
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
4
Rev
.
–
2.0
