Jiangsu-Changjing-Electronics-Technology-Co—Ltd–3DD13002B-RANGE-20-25
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–3DD13002B-RANGE-20-25 |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002B
TRANSISTOR
（
NPN
）
TO-92
FEATURE
P
ower
S
witching
A
pplications
1.EMITTER
2. COLLECTOR
3. BASE
ꢀꢁꢂꢃꢄꢅꢆ
Equivalent Circuit
13002B
,!ꢂ-ꢃꢄꢂꢅꢄꢁ.ꢂꢅ
13002B
ꢀ
Solid dot=Green molding compound device,
ꢀ
if none,the normal device
X X X
///,ꢀꢁ.ꢂ
ꢀ
1
ORDERING INFORMATION
Part Number
Package
TO-92
Packing Method
Pack Quantity
1000pcs/Bag
2000pcs/Box
3DD13002B
Bulk
-TA
3DD13002B
TO-92
T
a
pe
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
600
Unit
V
Collector-Emitter Voltage
Emitter-Base
V
o
ltage
400
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
0.8
A
P
C
0.9
W
℃
℃
T
J
150
T
stg
Storage
T
e
mperature
-5
5
~
150
1
E
,
Aug
,201
7
ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ
T =25
unless otherwise specified
G
a
Parameter
Symbol
Test conditions
I
C
=100
μ
A,I
E
=0
M
in
600
400
6
T
yp
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
=1mA,I
B
=0
V
I
E
= 100
μ
A,I
C
=0
V
V
CB
= 6
0
0
V
,
I
E
=0
100
100
100
40
µA
µA
µA
Collector cut-off current
Emitter cut-off current
Dc c
urrent gain
I
CEO
V
C
E
= 40
0
V
,
I
B
=0
I
EBO
V
EB
= 6
V
,
I
C
=0
h
FE1
V
CE
= 10
V
,
I
C
=200mA
V
CE
= 10
V
,
I
C
=0.25mA
I
C
=200mA, I
B
=40mA
I
C
=200mA, I
B
=40mA
9
5
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
0.5
1.1
V
V
V
CE
=10
V
,
I
C
=100mA
Transition frequency
f
T
5
MHz
f =1MHz
Fall time
t
f
0.5
2.5
µs
µs
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
Storage time
t
s
CLASSIFICATION OF h
FE
1
Range
9-15
15-20
20-25
25-30
30-35
35-40
www
.c
j
–
ele
c.com
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ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
E,Aug,2017
Typical Characteristics
Static Characteristic
h
FE
——
I
C
300
250
200
150
100
50
100
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= 10V
10mA
T
a
=100
℃
9mA
8mA
T
a
=25
℃
7mA
10
6mA
5mA
4mA
3mA
2mA
I
B
=1mA
0
1
800
0
2
4
6
8
10
12
14
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
1000
1000
800
600
400
200
0
β
=5
β
=5
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
10
0.5
800
1
10
100
0.1
1
10
100
800
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
10
800
COMMON EMITTER
CE
=10V
COMMON EMITTER
V
CE
=10V
V
T
a
=25
℃
8
6
4
2
0
100
10
1
0.1
0
200
400
600
800
BE
1000
1200
20
40
60
80
100
120
COLLECTOR CURRENT
I
C
(mA)
BASE-EMITER VOLTAGE
V
(mV)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
1200
900
600
300
0
1000
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
100
10
1
C
ob
0
25
50
75
100
125
150
30
0.1
1
10
AMBIENT TEMPERATURE
T
a
(
℃
)
REVERSE VOLTAGE
V
(V)
3
E,Aug,2017
TO-92
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
3.700
1.400
0.550
0.510
4.700
Min
Max
0.146
0.055
0.022
0.020
0.185
A
A1
b
3.300
1.100
0.380
0.360
4.400
3.430
4.300
0.130
0.043
0.015
0.014
0.173
0.135
0.169
c
D
D1
E
4.700
0.185
e
1.270 T
Y
P
0.050 T
Y
P
e1
L
Φ
h
2.440
14.100
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
0.000
0.000
TO-92
Suggested Pad Layout
4
E,Aug,2017
TO-92
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5
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E,Aug,2017
