Jiangsu-Changjing-Electronics-Technology-Co—Ltd–3DD13003-RANGE-25-30
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–3DD13003-RANGE-25-30 |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–3DD13003-RANGE-25-30 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003
TRANSISTOR (NPN)
TO-126
FEATURES
1 . BASE
z
Power switching applications
2. COLLECTOR
3. EMITTER
ꢀꢁꢂꢃꢄꢅꢆ
Equivalent Circuit
JCET Logo
13003
,!ꢀ-ꢁꢂꢀꢃꢂ
o
.ꢀꢃ
Solid
do
t
=
G
reen molding compound
device, if
none, the normal device
13003
13003
ORDERING INFORMATION
Part Number
Package
TO-126
TO-126
Packing Method
Pack Quantity
200pcs/Bag
60pcs/Tube
3DD
13003
Bulk
3DD1300
3
-TU
Tube
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
700
Unit
V
400
V
9
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
1.5
A
P
C
1.5
W
T
J
150
℃
℃
T
stg
-55
~
150
1
D
,
Aug
,201
7
ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ
T =25
unless otherwise specified
G
a
Parameter
symbol
Test conditions
I
C
=5mA, I
E
=0
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
700
400
9
V
V
I
C
=10mA, I
B
=0
I
E
=2mA, I
C
=0
V
V
CB
=700
V
,
I
E
=0
1
0.5
1
mA
mA
mA
Collector cut-off current
I
CEO
V
CE
=400
V
,
I
B
=0
Emitter cut-off current
I
EBO
V
EB
=9
V
,
I
C
=0
h
FE1
V
CE
=5
V
,
I
C
= 0.5 A
V
CE
=5
V
,
I
C
= 1.5A
I
C
=1A,I
B
=0.25A
I
C
=1A,I
B
=0.25A
V
CE
=10
V
,
Ic=100mA, f =1MHz
8
5
40
DC current gain
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
0.6
1.2
V
V
5
2
MHz
Fall time
t
f
I
C
=1A, I
B1
=-I
B2
=0.2A, V
CC
=100V
I
C
=250mA (UI9600)
0.5
4
µs
Storage time
t
S
μ
s
CLASSIFICATION OF
h
FE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF
t
S
Rank
A1
A2
2.5-3(
μ
s )
B1
3-3.5(
μ
s )
B2
3.5-4 (
μ
s )
Range
2-2.5 (
μ
s )
2
D
,
Aug
,201
7
Typical Characteristics
h
FE
——
I
C
Static Characteristic
500
400
300
200
100
0
100
V
CE
=5V
COMMON
EMITTER
T
a
=25
℃
I
B
=20mA
I
B
=18mA
I
B
=16mA
I
B
=14mA
I
B
=12mA
T
a
=100
℃
30
10
T
a
=25
℃
I
B
=10mA
I
B
=8mA
I
B
=6mA
3
1
I
B
=4mA
I
B
=2mA
0
2
4
6
8
10
0.01
0.1
0.3
1
0.03
2
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
V
CEsat
——
I
C
V
BEsat
——
I
C
1
1.2
1.0
0.8
0.6
0.4
0.3
0.1
T
a
=100
℃
T
a
=25
℃
T
a
=25
℃
T
a
=100
℃
0.03
0.01
β
=4
β
=4
0.02
0.3
1
0.1
1
0.05
0.1
0.3
3
0.02
0.05
3
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
C
ob
/ C
ib
——
V
CB
/ V
EB
P
C
—— T
a
1000
2.0
1.5
1.0
0.5
0.0
f=1MHz
I
E
=0/I
C
=0
C
ib
T
a
=25
℃
300
100
C
ob
30
10
0.1
1
10
0
25
50
75
100
125
150
0.3
20
3
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
3
D
,
Aug
,201
7
TO-126
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
Max
2.900
1.500
0.860
1.370
0.600
7.800
11.000
Min
Max
A
A1
b
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.114
0.059
0.034
0.054
0.024
0.307
0.433
b1
c
D
E
e
2.290 TYP
0.090 TYP
e1
h
4.480
0.000
15.300
2.100
3.900
3.000
4.680
0.300
15.700
2.300
4.100
3.200
0.176
0.000
0.602
0.083
0.154
0.118
0.184
0.012
0.618
0.091
0.161
0.126
L
L1
P
Φ
4
D
,
Aug
,201
7
