Jiangsu-Changjing-Electronics-Technology-Co—Ltd–B772S-RANGE-200-400
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
B772S
TRANSISTOR (PNP)
TO-92
FEATURES
Low speed switching
1. EMITTER
2. COLLECTOR
3 BASE
ꢀꢁꢂꢃꢄꢅꢆ
Equivalent Circuit
B772
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ꢀ
B772
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ꢀ
Z
ꢀ ꢀ ꢀ
ꢀ
Z=Rank of h
FE
ꢀ
%%%ꢓ&ꢏꢑꢌ
1
ORDERING INFORMATIO
N
ꢀ
Part Number
Package
ꢀꢁꢂꢃꢄꢅꢀ
ꢀꢁꢂꢃꢄꢅꢀ
Packing Method
ꢆꢇꢈꢉꢀ
Pack Quantity
1000pcs/Bag
2000pcs/Box
B772S
ꢃꢁꢍ
B772S
ꢁ
ꢊ
ꢋꢌꢀ
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Unit
V
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-40
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
V
-6
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction
T
e
mperature
A
-3
P
C
0.625
2
00
W
R
Ө
JA
T
j
℃
/W
℃
150
-55
~
150
T
stg
Storage
T
e
mperature
℃
1
E
,
Aug
,201
7
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T =25
unless otherwise specified
G
a
Parameter
Symbol
Test
conditions
M
in
-40
-30
-6
T
yp
M
ax
U
nit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
=-100
μ
A ,I
E
=0
I
C
= -10mA , I
B
=0
I
E
= -100
μ
A,I
C
=0
V
CB
= -40
V
,
I
E
=0
V
CE
=-30
V
,
I
B
=0
V
EB
=-6
V
,
I
C
=0
V
V
-1
-10
-1
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
DC current gain
h
FE
V
CE
= -2
V
,
I
C
= -1A
I
C
=-2A, I
B
= -0.2A
60
50
400
-0.5
Collector-emitter saturation voltage
V
CE(sat)
V
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-2A, I
B
= -0.2A
-1.5
V
CE
= -5
V
,
I
C
=-0.1A
f =
10MHz
Transition frequency
80
MHz
f
T
CLASSIFICATION OF h
FE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
www
.c
j
–
ele
c.com
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E,Aug,2017
Typical Characteristics
h
FE
——
I
C
Static Characteristic
-2.0
-1.6
-1.2
-0.8
-0.4
-0.0
1000
100
10
-10mA
-9mA
-8mA
-7mA
-6mA
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
-5mA
-4mA
-3mA
-2mA
I
B
=-1mA
COMMON EMITTER
CE
= -2V
V
-3000
-0
-1
-0
-6
-12
-18
-10
-100
-1000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
——
V
BEsat
——
I
C
I
C
-2000
-1000
-1000
-100
-10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=10
β
=10
-1
-100
-10
-100
-1000
-3000
-1
-10
-100
-1000
-3000
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
C
ob
/C
ib
——
V
CB
/V
EB
I
C
——
V
BE
-3000
-1000
500
f=1MHz
I
E
=0/I
C
=0
COMMON EMITTER
V
CE
= -2V
T
a
=25
℃
C
ib
C
ob
100
-100
-10
-1
10
-0.1
-20
-1
-10
-300
-600
-900
-1200
REVERSE VOLTAGE
V
(V)
REVERSE VOLTAGE
V
BE
(mV)
f
T
——
I
C
P
C
—— T
a
750
625
500
375
250
125
0
500
100
10
1
V
CE
=-5V
T
a
=25
o
C
-5
-10
-100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
3
E,Aug,2017
TO-92
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
3.700
1.400
0.550
0.510
4.700
Min
Max
0.146
0.055
0.022
0.020
0.185
A
A1
b
3.300
1.100
0.380
0.360
4.
300
3.430
4.300
0.130
0.043
0.015
0.014
0.169
0.135
0.169
c
D
D1
E
4.700
0.185
e
1.270 T
Y
P
0.050 T
Y
P
e1
L
Φ
h
2.440
14.100
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
0.000
0.000
TO-92
Suggested Pad Layout
4
E,Aug,2017
TO-92
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5
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E,Aug,2017
