Jiangsu-Changjing-Electronics-Technology-Co—Ltd–B772Y
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–B772Y |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–B772Y |
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-
126
Plastic-Encapsulate Transistors
B772
TRANSISTOR (PNP)
FEATURES
TO-126
1. EMITTER
2. COLLECTOR
3 BASE
Low Speed Switching
ꢀꢁꢂꢃꢄꢅꢆ
Equivalent Circuit
B
772
,!ꢀ-ꢁꢂꢀꢃꢂ
o
.ꢀꢃ
Solid
do
t
=
G
reen molding compound
device, if
none, the normal device
//,ꢄ
ode
ꢀ
B
772
ꢀ
XX
ORDERING INFORMATION
Part Number
B772
Package
TO-126
TO-126
Packing Method
Pack Quantity
Bulk
200pcs/Bag
60pcs/Tube
B772
-TU
Tube
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
-40
V
-30
-6
V
V
I
C
Collector Current -Continuous
Collector Power Dissipation
-3
A
P
C
1.25
100
W
R
Ө
JA
T
J
,
T
stg
℃
/W
℃
Thermal Resistance from Junction to Ambient
Operation Junction
and Storage Temperature Range
-55-150
1
Rev
.
–
2.0
ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ
T =25
unless otherwise specified
G
a
Parameter
Symbol
Test
conditions
M
in
-40
-30
-6
T
yp
M
ax
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
=-100
μ
A ,I
E
=0
I
C
= -10mA , I
B
=0
I
E
= -100
μ
A,I
C
=0
V
CB
= -40
V
,
I
E
=0
V
CE
=-30
V
,
I
B
=0
V
EB
=-6
V
,
I
C
=0
V
V
-1
-10
-1
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
DC current gain
h
FE
V
CE
= -2
V
,
I
C
= -1A
I
C
=-2A, I
B
= -0.2A
60
50
400
-0.5
Collector-emitter saturation voltage
V
CE(sat)
V
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-2A, I
B
= -0.2A
-1.5
V
CE
= -5
V
,
I
C
=-0.1A
f =
10MHz
Transition frequency
80
MHz
f
T
CLASSIFICATION OF h
FE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
2
Rev
.
–
2.0
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
3000
1000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= -2V
-10mA
-9mA
-8mA
T
a
=100
℃
-7mA
-6mA
-5mA
-4mA
-3mA
T
a
=25
o
C
100
-2mA
I
B
=-1mA
10
-0
-3
-6
-9
-1
-10
-100
-1000
-3000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
——
I
C
V
CEsat
—— I
C
-1000
-100
-10
-3000
-1000
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
-100
T
a
=25
℃
β
=10
β
=10
-1
-10
–
-3000
–
–
–
-3000
-1
-10
-100
-1000
1
10
100
1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
BE
——
I
C
V
CB
/
V
EB
C
ob
/ C
ib
——
1000
100
10
-3000
-1000
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
C
ib
-100
-10
-1
C
ob
COMMON EMITTER
V
CE
= -2V
-0.1
-1
-10
-20
-0
-200
-400
-600
-800
-1000
-1200
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
V
BE
(mV)
f
T
——
I
C
P
c
—— T
a
1.50
500
100
1.25
1.00
0.75
0.50
0.25
0.00
10
V
CE
=-5V
T
a
=25
o
C
1
-5
-10
-100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
3
Rev
.
–
2.0
TO-126
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
Max
2.900
1.500
0.860
1.370
0.600
7.800
11.000
Min
Max
A
A1
b
b1
c
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.114
0.059
0.034
0.054
0.024
0.307
0.433
D
E
e
2.290 TYP
0.090 TYP
e1
h
L
L1
P
Φ
4.480
0.000
15.300
2.100
3.900
3.000
4.680
0.300
15.700
2.300
4.100
3.200
0.176
0.000
0.602
0.083
0.154
0.118
0.184
0.012
0.618
0.091
0.161
0.126
4
Rev
.
–
2.0
