Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BC817W-RANGE-160-400
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JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
JC
E
T
BC817W
TRANSISTOR (NPN)
SOT-323
FEATURES
For General AF Applications
High Collector Current
High Current Gain
Low Collector-Emitter Saturation Voltage
1
.
BASE
2
.
EMITTER
3. COLLECTOR
MAXMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
50
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
5
V
Collector Current -Continuous
Collector Dissipation
0.5
A
P
C
0.2
W
R
θ
JA
T
j
Thermal Resistance from Junction to Ambient
Junction
T
e
mperature
625
℃
/W
℃
150
T
stg
Storage
T
e
mperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
50
45
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=10
μ
A,I
E
=0
V
(BR)CEO
I
C
=10mA,I
B
=0
V
(BR)EBO
I
E
=1
μ
A,I
C
=0
V
V
I
CBO
I
EBO
V
CB
=20
V
,
I
E
=0
0.1
0.1
μ
A
μ
A
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE(ON)
f
T
V
CE
=1
V
,
I
C
=100mA
V
CE
=1
V
,
I
C
=500mA
I
C
=500mA,I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CE
=1
V
,
I
C
= 500mA
V
CE
=5
V
,
I
C
=10mA,f=100MHz
V
CB
=10
V
,
f=1MHz
100
40
600
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.7
1.2
1.2
V
V
V
Transition frequency
100
MHz
pF
Collector output capacitance
C
ob
5
CLASSIFICATION of h
FE (1)
Rank
BC817-16W
100-250
6A
BC817-25W
160-400
6B
BC817-40W
250-600
6C
Range
Marking
1
A
D,
J
S
u
e
n
p
,
,
2
2
0
0
1
1
4
4
Typical Characteristics
Static Characteristic
h
FE
——
I
C
250
200
150
100
50
1000
COMMON EMITTER
0.80mA
0.72mA
T
a
=25
℃
T
a
=100
℃
0.64mA
0.56mA
0.48mA
T
a
=25
℃
100
0.40mA
0.32mA
0.24mA
0.16mA
COMMON EMITTER
V
CE
= 1V
I
B
=0.08mA
0
10
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
10
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
1000
1200
900
β
=10
β
=10
100
600
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
10
0.1
300
0.1
1
10
100
500
500
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
1000
500
COMMON EMITTER
V
CE
=1V
100
10
1
100
10
1
COMMON EMITTER
V
CE
= 5V
T
a
=25
℃
0.1
300
600
900
1200
0.69
1
10
100
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
C
ob
/C
ib
—— V
CB
/V
EB
250
200
150
100
50
1000
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
100
10
1
C
ib
C
ob
0
0.1
0.1
0
25
50
75
100
125
150
30
1
10
AMBIENT TEMPERATURE
T
a
(
℃
)
REVERSE VOLTAGE
V
(V)
2
A
D,
J
S
u
e
n
p
,
,
2
2
0
0
1
1
4
4
SO
T
-323 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
0.650 TYP
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
SO
T
-323 Suggested Pad Layout
3
A
D,
J
S
u
e
n
p
,
,
2
2
0
0
1
1
4
4
