Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BC847BVN
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-563
Plastic-Encapsulate Transistors
DUAL TRANSISTOR (NPN+PNP)
BC847
BVN
SOT-563
FEATURES
z
Epitaxial Die Construction
z
Two isolated
NPN/PNP
(BC847W+BC857W)
Transistors in one package
MAKING:
KAW
MAXIMUM RATINGS TR1 (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
eter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
45
V
6
V
Collector Current –Continuous
Collector Power Dissipation
0.1
15
0
A
P
C
mW
Operation Junction
and
Storage Temperature Range
℃
T
J
,
T
stg
-55
~+
150
CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
M
in
T
yp
M
ax
U
nit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=10
μ
A,I
E
=0
V
(BR)CEO
I
C
=10mA,I
B
=0
V
(BR)EBO
I
E
=1
μ
A,I
C
=0
50
45
6
V
V
V
I
CBO
I
EBO
V
CB
=30
V
,
I
E
=0
15
15
nA
nA
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
DC current gain
h
FE
V
CE
=5
V
,
I
C
=2mA
200
450
0.25
0.6
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
BE(on)
V
BE(on)
C
ob
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
V
CE
=5
V
,
I
C
=2mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.7
0.9
V
V
0.58
100
0.7
0.72
6.0
V
V
CE
=5
V
,
I
C
=10mA
V
CB
=10
V
,
I
E
=0,f=1MHz
V
CE
=5
V
,
I
C
=10mA,f=100MHz
V
Collector output capacitance
Transition frequency
pF
MHz
f
T
V
CE
=5
V
,
I
c
=0.2mA,
Noise figure
NF
10
dB
f=1kHz,Rg=2K
Ω
,
∆
f=200Hz
1
Rev
.
–
2
.0
MAXIMUM RATINGS TR2 (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
eter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-45
V
-5
V
Collector Current –Continuous
Collector Power Dissipation
-0.1
15
0
A
P
C*
mW
Operation Junction
and
Storage Temperature Range
-55
~+
150
T
J
,
T
stg
℃
CHARACTERISTICS of TR2 (PNP Transistor) (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10
μ
A,I
E
=0
I
C
=-10mA,I
B
=0
V
I
E
=-1
μ
A,I
C
=0
V
V
CB
=-30V,I
E
=0
-15
-15
nA
nA
Emitter cut-off current
I
EBO
V
EB
=-5V,I
C
=0
DC current gain
h
FE1
V
CE
=-5V,I
C
=-2mA
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
V
CE
=-5V,I
C
=-2mA
V
CE
=-5V,I
C
=-10mA
V
CB
=-10V,I
E
=0,f=1MHz
V
CE
=-5V,I
C
=-10mA,f=100MHz
220
475
-0.3
-0.65
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
BE(on)
V
BE(on)
C
ob
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.7
V
-0.95
-0.75
-0.82
4.5
V
-0.6
100
V
V
Collector output capacitance
Transition frequency
pF
MHz
f
T
V
CE
=-
5
V
,
I
c
=-
0.2
mA,
Noise figure
NF
10
dB
f=
1k
Hz,Rg=
2
K
Ω
,
∆
f=200Hz
2
Rev
.
–
2
.0
Typical Characteristics
BC847
BV
N/TR1
Static Characteristic
h
FE
——
I
C
4
600
500
400
300
200
100
0
COMMON EMITTER
V
CE
= 5V
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
10uA
9.0uA
3
8.0uA
7.0uA
6.0uA
2
1
0
5.0uA
4.0uA
3.0uA
T
a
=25
℃
2.0uA
I
B
=1uA
0
3
6
9
12
0.1
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
V
BEsat
——
I
C
I
C
1000
100
10
2000
1000
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=20
β
=20
100
0.1
1
10
100
0.1
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
C
ob
/C
ib
——
V
CB
/V
EB
I
C
——
V
BE
100
10
1
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
1
C
ob
COMMON EMITTER
V
CE
= 5V
0.1
0.1
0.1
1
10
20
0
300
600
900
1200
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
f
T
——
I
C
200
175
150
125
100
75
350
300
250
200
150
100
50
V
CE
=5V
T
a
=25
o
C
50
25
0
0
0
25
50
75
100
125
150
0
5
10
15
20
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
3
Rev
.
–
2
.0
Typical Characteristics
BC847
BV
N/TR2
Static Characteristic
h
FE
——
I
C
-4.0
600
400
200
0
COMMON EMITTER
V
CE
= -5V
COMMON
EMITTER
T
a
=25
℃
-3.5
T
a
=100
℃
-10uA
-9.0uA
-3.0
-8.0uA
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-7.0uA
-6.0uA
-5.0uA
T
a
=25
℃
-4.0uA
-3.0uA
-2.0uA
I
B
=-1.0uA
-0
-2
-4
-6
-8
-10
-12
-0.1
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
V
BEsat
——
I
C
I
C
-1000
-100
-10
-1000
-800
T
a
=25
℃
-600
-400
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=20
β
=20
-200
-0.1
-1
-10
-100
-0.1
-1
-10
-100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
C
ob
/C
ib
——
V
CB
/V
EB
I
C
——
V
BE
100
10
1
-100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
-10
C
ib
-1
C
ob
COMMON EMITTER
V
CE
= -5V
-0.1
-0.1
-1
-10
-20
-0
-300
-600
-900
-1200
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
f
T
——
I
C
200
175
150
125
100
75
300
200
100
0
50
V
CE
=-5V
T
a
=25
o
25
C
0
0
25
50
75
100
125
150
-0
-4
-8
-12
-16
-20
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
4
Rev
.
–
2
.0
SO
T
–
56
3 Package Outline Dimensions
SO
T
–
56
3 Suggested Pad Layout
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
5
Rev
.
–
2
.0
