Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BC857A-RANGE-125-250
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC856A, B
TRANSISTOR (PNP)
BC857A, B,C
BC858A, B,C
SOT-23
FEATURES
1. BASE
2. EMITTER
y
y
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
Unit
Collector-Base Voltage
-80
-50
-30
BC856
BC857
BC858
V
V
CEO
Collector-Emitter Voltage
-65
-45
BC856
BC857
BC858
V
-30
V
EBO
I
C
Emitter-Base Voltage
-5
V
A
Collector Current –Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.1
200
P
C
mW
T
J
150
℃
T
stg
Storage
T
e
mperature
-65-150
℃
DEVICE MARKING
BC856A=3A; BC856B=3B;
BC857A=3E;BC857B=3F;BC857C=3G;
BC858A=3J; BC858B=3K; BC858C=3L
B,Jan,2014
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
Max
Unit
Collector-base breakdown voltage
BC856
BC857
BC858
BC856
BC857
BC858
-80
-50
-30
-65
-45
-30
V
CBO
V
I
C
= -10
μ
A, I
E
=0
Collector-emitter breakdown voltage
V
CEO
V
EBO
I
CBO
I
C
= -10mA, I
B
=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
-5
I
E
= -1
μ
A, I
C
=0
BC856
BC857
BC858
BC856
BC857
BC858
V
CB
= -70 V , I
E
=0
V
CB
= -45 V , I
E
=0
V
CB
= -25 V , I
E
=0
-0.1
μ
A
Collector cut-off current
V
CE
= -60 V , I
B
=0
V
CE
= -40 V , I
B
=0
CE
= -25 V , I
B
=0
I
CEO
I
EBO
h
FE
-0.1
-0.1
μ
A
μ
A
V
Emitter cut-off current
V
EB
= -5 V ,
I
C
=0
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
125
220
420
250
475
800
V
CE
= -5
V
,
I
C
= -2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
I
C
=-100mA,I
B
= -5 mA
-0.5
-1.1
V
V
I
C
= -100mA, I
B
= -5mA
V
CE
= -5
V
,
I
C
= -10mA
f=
100MHz
Transition frequency
Collector capacitance
100
MHz
pF
f
T
C
ob
V
CB
=-10
V
,
f
=1MHz
4.5
B,Jan,2014
BC856/BC857/BC858
Typical Characteristics
Static Characteristic
h
FE
——
I
C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
600
COMMON EMITTER
V
CE
= -5V
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
-10uA
-9.0uA
-8.0uA
400
200
0
-7.0uA
-6.0uA
-5.0uA
T
a
=25
℃
-4.0uA
-3.0uA
-2.0uA
I
B
=-1.0uA
-0
-2
-4
-6
-8
-10
-12
-0.1
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
V
BEsat
——
I
C
I
C
-1000
-100
-10
-1000
-800
T
a
=25
℃
-600
-400
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=20
β
=20
-200
-0.1
-1
-10
-100
-0.1
-1
-10
-100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
C
ob
/C
ib
——
V
CB
/V
EB
I
C
——
V
BE
100
10
1
-100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
-10
C
ib
-1
C
ob
COMMON EMITTER
V
CE
= -5V
-0.1
-0.1
-1
-10
-20
-0
-300
-600
-900
-1200
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
f
T
——
I
C
250
200
150
100
50
300
200
100
0
V
CE
=-5V
T
a
=25
o
C
0
0
25
50
75
100
125
150
-0
-4
-8
-12
-16
-20
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
B,Jan,2014
