Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BC857BV
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BC857BV |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BC857BV |
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-563
Plastic-Encapsulate Transistors
BC857BV
DUAL
TRANSISTOR (PNP+PNP)
SOT-563
FEATURES
z
Epitaxial Die Construction
z
Complementary NPN Types Available
(BC847BV)
z
Ultra-Small Surface Mount Package
Marking: K5V
MAXIMUM RATINGS (
T =25
unless otherwise noted
)
℃
a
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-50
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
-45
V
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance
from
Junction to Ambient
-0.1
0.15
833
A
P
C
W
R
θ
JA
℃
/W
Operation Junction
and
Storage Temperature Range
T
J
,
T
stg
-55
~
+150
℃
ELECTRICAL CHARACTERISTICS(Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
M
in
-50
-45
-5
Typ
M
ax
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=-10
μ
A,I
E
=0
V
(BR)CEO
I
C
=-10mA,I
B
=0
V
(BR)EBO
I
E
=-1
μ
A,I
C
=0
V
V
I
CBO
h
FE
V
CB
=-30
V
,
I
E
=0
-15
475
-0.1
-0.4
nA
DC current gain
V
CE
=-5
V
,
I
C
=-2mA
220
V
CE(sat)(1)
I
C
=-10mA,I
B
=-0.5mA
V
CE(sat)(2)
I
C
=-100mA,I
B
=-5mA
V
BE(sat)(1)
I
C
=-10mA,I
B
=-0.5mA
V
BE(sat)(2)
I
C
=-100mA,I
B
=-5mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.7
-0.9
V
V
V
BE(1)
V
BE(2)
f
T
V
CE
=-5
V
,
I
C
=-2mA
-0.6
100
-0.75
-0.82
V
V
CE
=-5
V
,
I
C
=-10mA
V
Transition frequency
V
CE
=-5
V
,
I
C
=-10mA,f=100MHz
V
CB
=-10
V
,
I
E
=0,f=1MHz
MHz
pF
Collector output capacitance
C
ob
4.5
10
V
CE
=-5
V
,
I
c
=-0.2mA,
Noise figure
NF
dB
f=1kHZ,Rs=2K
Ω
,BW=200Hz
1
Rev
.
–
2
.0
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-8
-6
-4
-2
-0
1000
100
10
COMMON
EMITTER
T
a
=25
℃
-30uA
-27uA
-24uA
-21uA
-18uA
-15uA
T
a
=100
℃
T
a
=25
℃
-12uA
-9uA
-6uA
I
B
=-3uA
COMMON EMITTER
V
CE
= -5V
-0
-2
-4
-6
-8
-0.1
-1
-10
-100
-100
-100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
—— I
C
V
BEsat
——
I
C
-1
-2
-1
T
a
=25
℃
T
a
=100
℃
-0.1
T
a
=100
℃
T
a
=25
℃
β
=20
β
=20
-0.01
-0.1
-0.1
-0.1
-1
-10
-100
-1.2
-20
-1
-10
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
——
V
BE
I
C
f
T
——
-100
500
T
a
=100
℃
-10
100
T
a
=25
℃
-1
COMMON EMITTER
V
CE
=-5V
COMMON EMITTER
V
CE
=-5V
T
a
=25
℃
-0.1
10
-0.1
-0.0
-0.3
-0.6
-0.9
-1
-10
BASE-EMMITER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
—— V
CB
/ V
EB
P
C
—— T
a
200
150
100
50
30
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0
-0.1
-1
-10
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
Rev
.
–
2
.0
SO
T
–
56
3 Package Outline Dimensions
SO
T
–
56
3 Suggested Pad Layout
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
3
Rev
.
–
2
.0
