Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BD235

Part #Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BD235
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Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BD235
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-
126
Plastic-Encapsulate Transistors  
BD233 /
BD
235 /
BD
237
TRANSISTOR (NPN)  
TO-126  
FEATURES  
Complement to BD234/
BD
236/
BD
238 respectively  
1. EMITTER  
2. COLLECTOR  
3. BASE  
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
BD
23
3  
BD
235  
BD
237  
ꢀ
ꢀ
ꢀ
XX  
XX  
XX  
BD
233
,
BD
235
,BD
237
,!ꢀ-ꢁꢂꢀꢃꢂ
o
.ꢀꢃ  
Solid
do
t
=
G
reen molding compound device,  
if none, the normal device  
//,
ꢄ
ode
ꢀ
 
ORDERING INFORMATION  
Part Number  
BD
233  
Package  
TO-126  
TO-126  
TO-126  
TO-126  
TO-126  
TO-126  
Packing Method  
Pack Quantity  
200pcs/Bag  
200pcs/Bag  
200pcs/Bag  
Bulk  
Bulk  
BD
235  
BD
237  
Bulk  
60pcs/Tube  
60pcs/Tube  
Tube  
Tube  
Tube  
BD
233
-TU  
BD
235
-TU  
BD
237
-TU  
60pcs/Tube  
MAXIMUM RATINGS (T

a

=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
BD233  
BD235  
BD237  
BD233  
BD235  
BD237  
45  
60  
100  
45  
60  
80  
5
V

CBO  

Collector-Base Voltage  
V
age  
V

CEO  

Collector-Emitter Volt  
V
V

EBO  

I

C  

V
A
Emitter-Base Voltage  
2
Collector Current –Continuous  
Collector Dissipation  
1.
5
 
P

C  

W
W
P

C  

℃
Collector Dissipation
 
(Tc=25  
)
25  
℃
/W  
R

Θ
JA  

Thermal Resistance from Junction to Ambient  
83  
R

Θ
J
C  

℃
/W  
Thermal Resistance from Junction to
Case  
5
Operation Junction
 
and Storage Temperature Range  
T

J

,
T

stg  

℃
-55~+150  
1
Rev
.
–
2.
1
 

ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ  
T =25
 
unless otherwise specified  
G
a
Parameter  
Symbol  
Test  
conditions  
M
in  
M
ax  
U
nit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
BD233  
45  
60  
BD235  
BD237  
BD233  
BD235  
BD237  
V
(BR)  
CBO  
I

C

= 1mA, I

E

=0  
V
100  
45  
V
(BR)  
CEO  
I

C

= 100mA, I

B

=0  
60  
V
V
80  
Emitter-base breakdown voltage  
Collector cut-off current  
V
(BR)  
EBO  
I

E

= 1mA, I

C

=0  
V

CB

= 45
V
,
I

E

=0  
5
BD233  
BD235  
BD237  
I

CBO  

V

CB

= 60
V
,
I

E

=0  

CB

= 100
V
,
I

E

=0  
100  
1
µA  
mA  
V
Emitter cut-off current  
DC current gain  
I

EBO  

V

EB

= 5
V
,
I

C

=0  
H

FE(1)  

H

FE(2)  

V

CE(sat)  

V

CE

= 2
V
,
I

C

=150mA  
V

CE

=2
V
,
I

C

= 1A  
I

C

=1A, I

B

= 100m A  
40  
25  
Collector-emitter saturation voltage  
Transition frequency  
0.6  
V
V

CE

=10
V
,
I
c=250mA  
f

T  

3
MHz  
f =10MHz  
2

TYPICAL CHARACTERISTICS  
Static Characteristic  
h

FE

—— I

C  

400  
1000  
COMMON  
EMITTER  
T

a

=25
℃
 
COMMON EMITTER  
V

CE

=2V  
1.50mA  
300  
200  
100  
0
T

a

=100
℃  
T

a

=25
℃  
1.35mA  
1.20mA  
1.05mA  
100  
0.90mA  
0.75mA  
0.60mA  
0.45mA  
0.30mA  
I

B

= 0.15mA  
10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
1
10  
100  
1000 2000  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

CEsat

—— I

C  

V

BEsat

—— I

C  

1000  
1000  
β
=10  
β
=10  
800  
600  
400  
200  
T

a

=25
℃  
100  
10  
1
T

a

=100
℃  
T

a

=25
℃  
T

a

=100
℃  
2000  
1
10  
100  
1000  
1
10  
100  
1000  
2000  
COLLECTOR CURREMT
 
I

C

(mA)  
COLLECTOR CURREMT
 
I

C

(mA)  
I

C

—— V

BE  

P

C

—— T

a  

1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
2000  
1000  
COMMON EMITTER  
V

CE

=2V  
100  
10  
1
200  
400  
600  
800  
1000  
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
BASE-EMMITER VOL
T
A
GE
 
V

BE

(mV)  
C

ob

/C

ib

——  
V

CB

/V

EB  

1000  
100  
10  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

C

ob  

1
0.1  
30  
1
10  
REVERSE VOLTAGE  
V
(V)  
3
Rev
.
–
2.
1
 

TYPICAL CHARACTERISTICS  
Normalized Traisient Thermal Impendance  
10  
In descending order  
D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse  
1
0.1  
0.01  
1E-3  
1E-4  
D=T

ON

/T  
R

θJA

=83
℃
/W  
T

J,PK

=T

A

+Zthj
a
×P

DM

×R

θJA  

1E-6  
1E-5  
1E-4  
1E-3  
0.01  
0.1  
1
10  
100  
1000  
SQUARE WAVE PULSE DURATION,
 
tp (sec)  
BD233  
BD235  
Maximum Forward Biased Safe Operating Area  
Maximum Forward Biased Safe Operating Area  
10  
10  
I

CM  

I

CM  

I

C  

I

C  

1ms  
1ms  
1
1
10ms  
10ms  
100ms  
100ms  
1s  
1s  
10s  
0.1  
0.1  
10s  
100s  
DC  
100s  
R

θJA

=83
℃
/W  
R

θJA

=83
℃
/W  
T

A

=25
℃  
DC  
T

A

=25
℃  
Single pulse  
0.01  
0.1  
Single pulse  
0.01  
0.1  
1
10  
200  
1
10  
200  
BVECEO  
BVECEO  
COLLECTOR TO EMITTER VOLTAGE
 
V

CE

(V)  
COLLECTOR TO EMITTER VOLTAGE
 
V

CE

(V)  
BD237  
Maximum Forward Biased Safe Operating Area  
10  
I

CM  

I

C  

1
1ms  
10ms  
100ms  
1s  
0.1  
10s  
R

θJA

=83
℃
/W  
100s  
DC  
T

A

=25
℃  
Single pulse  
0.01  
0.1  
1
10  
300  
BVECEO  
COLLECTOR TO EMITTER VOLTAGE
 
V

CE

(V)  
4
Rev
.
–
2.
1  

TO-126
Package Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
2.500  
1.100  
0.660  
1.170  
0.450  
7.400  
10.600  
Max  
2.900  
1.500  
0.860  
1.370  
0.600  
7.800  
11.000  
Min  
Max  
A
A1  
b
b1  
c
0.098  
0.043  
0.026  
0.046  
0.018  
0.291  
0.417  
0.114  
0.059  
0.034  
0.054  
0.024  
0.307  
0.433  
D
E
e
2.290 TYP  
0.090 TYP  
e1  
h
L
L1  
P
Φ
4.480  
0.000  
15.300  
2.100  
3.900  
3.000  
4.680  
0.300  
15.700  
2.300  
4.100  
3.200  
0.176  
0.000  
0.602  
0.083  
0.154  
0.118  
0.184  
0.012  
0.618  
0.091  
0.161  
0.126  
5
Rev
.
–
2.
1