Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BF423

Part #Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BF423
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Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BF423
IANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
BF421  
BF423  
TRANSISTOR (PNP)  
TO-92  
1. EMITTER  
2.COLLECTOR  
3. BASE  
FEATURES  
z
Low
F
eedback
C
apacitance.  
z
PNP
T
ransistors in a TO-92
P
lastic
P
ackage.  
NPN
C
omplements: BF420 and BF422  
Class-B
V
ideo
O
utput
S
tages in
C
olour  
Te
levision and
P
rofessional
M
onitor
E
quipment.  
z
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
B
F
42
1  
B
F
42
3  
ꢀ
ꢀ
X X X  
X X X  
1
1
BF421,BF423
,!ꢂ-ꢃꢄꢂꢅꢄꢁ.ꢂꢅ  
ꢀ
Solid dot=Green molding compound device,  
if none,the normal device  
///,ꢀꢁ.ꢂ  
ORDERING INFORMATION  
Part Number  
Package  
TO-92  
TO-92  
TO-92  
TO-92  
Packing Method  
Pack Quantity  
1000pcs/Bag  
2000pcs/Box  
1000pcs/Bag  
2000pcs/Box  
BF421  
Bulk  
T
a
pe  
Bulk  
T
a
pe  
-TA  
BF421  
BF423  
BF423  
-TA  
MAXIMUM RATINGS (T

a

=25
℃
unless otherwise noted)  
Symb
o
l  
V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  
Collector-Base Voltage  
BF421  
-300  
BF423  
-250  
Unit  
V
Collector-Emitter Voltage  
-300  
-250  
V
Emitter-Base V
o
l
tage  
-5  
V
Collector Cur
r
e
nt -Continuous  
-100  
0.
83  
151  
mA  
W
P

C  

Collector Power Dissipation  
T
hermal resistance from junction to ambient  
Operation Junction
 
and Storage Temperature Range  
R
thja  
℃
/W  
T

J

,
T

stg  

–
5
5
~
+150  
℃
1
Rev
.
–
2.0  

ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ  
T =25
 
unless otherwise specified  
G
a
Parameter  
Symbol  
Test  
conditions  
M
in  
M
ax Unit  
Collector-base breakdown voltage  
BF421  
BF423  
BF421  
BF423  
-300  
-250  
-300  
-250  
-5  
V

(BR)CBO

I

C

=–100
μ
A, I

E

=0  
V
Collector-emitter breakdown voltage  
V

(BR)CEO

I

C

= -1mA , I

B

=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V

(BR)EBO  

I

CBO  

I

E

=-100
μ
A, I

C

=0  
V

CB

=-200 V ,
 
I

E

=0  
-0.01  
-0.1  
μ
A  
BF421  
BF423  
I

EBO  

V

EB

=-5V ,
 
I

C

=0  
μ
A  
-0.05  
DC current gain  
h

FE  

V

CE

=-20
V
,
I

C

=-25mA  
50  
60  
Collector-emitter saturation voltage  
BF421  
BF423  
I

C

=-20mA, I

B

=-2mA  
I

C

=-30mA, I

B

=-5mA  
V

CE

=-10
V
,
I

C

=-10mA  
f =
100MHz  
V

CE(sat)  

-0.6  
1.6  
V
Transition frequency  
Feedback capacitance  
MHz  
pF  
f

T  

C

re  

V

CE

=-30
V
,
I

C

=0,f=1MHz  
2
Rev
.
–
2.0  

TO-92
Package Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
3.700  
1.400  
0.550  
0.510  
4.700  
Min  
Max  
0.146  
0.055  
0.022  
0.020  
0.185  
A
A1  
b
3.300  
1.100  
0.380  
0.360  
4.
300  
3.430  
4.300  
0.130  
0.043  
0.015  
0.014  
0.169  
0.135  
0.169  
c
D
D1  
E
4.700  
0.185  
e
1.270 T
Y
P  
0.050 T
Y
P  
e1  
L
Φ
h
2.440  
14.100  
2.640  
14.500  
1.600  
0.380  
0.096  
0.555  
0.104  
0.571  
0.063  
0.015  
0.000  
0.000  
TO-92
Suggested Pad Layout  
NOTICE  
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other  
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising  
out of the application or use of any product described herein.  
3
Rev
.
–
2.0  

TO-92
7DSHꢀDQGꢀ5HHO  
4
Rev
.
–
2.0