Jiangsu-Changjing-Electronics-Technology-Co—Ltd–BF620
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89
-3L
BF620
TRANSISTOR (NPN)
1. BASE
FEATURES
z
z
z
Low current (max. 50mA)
2. COLLECTOR
3. EMITTER
High voltage (max. 300V).
Video output stages.
Marking
：
DC
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
300
300
5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Power Dissipation
50
mA
mW
P
C
500
T
J
,
T
stg
-55
~
150
Junction
T
e
mperature
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
M
in
300
300
5
T
yp
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100
μ
A, I
E
=0
V
(BR)CEO
I
C
=1mA, I
B
=0
V
(BR)EBO
I
E
=100
μ
A, I
C
=0
V
V
I
CBO
I
EBO
h
FE
V
CB
=200
V
,
I
E
=0
10
50
nA
nA
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
DC current gain
V
CE
=20
V
,
I
C
=25mA
I
C
=30mA, I
B
=5mA
V
CE
=10
V
,
I
C
=10mA, f=100MHz
50
60
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
0.6
V
MHz
1
Rev
.
–
2.0
SO
T
–
89-3L
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.600
0.520
0.580
0.440
4.600
Min
Max
0.063
0.020
0.023
0.017
0.181
A
b
b1
c
1.400
0.320
0.400
0.350
4.400
0.055
0.013
0.016
0.014
0.173
D
D1
E
E1
e
e1
L
1.550 REF.
0.061 REF.
2.300
3.940
2.600
4.250
0.091
0.155
0.102
0.167
1.500 T
Y
P
.
3.000 T
Y
P
.
0.060 T
Y
P
.
0.118 T
Y
P
.
0.900
1.200
0.035
0.047
SO
T
–
89-3L
Suggested Pad Layout
1.300
0.700
0.900
0.800
1.500
NOTICE
JSCJ reserve
s
the right to make modifications,enhancements,improvements,corrections or other
changes without
f
urther notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
2
Rev
.
–
2.0
