Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2304
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2304
N-Channel MOSFET
V
(BR)DSS
R
DS(on)
MAX
I
D
SOT-23
@
1
0
V
Ω
60
m
V
3
0
3
.
3
A
1. GATE
@
7
5
m
Ω
4
.
5V
2. SOURCE
3. DRAIN
FEATURE
APPLICATION
z
TrenchFET Power MOSFET
z
z
Load Switch for Portable Devices
DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (T
a
=25
℃
unless otherwise noted)
Symbol
Value
Parameter
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
I
D
30
±20
V
Continuous Drain Current
3.3
A
Pulsed Drain Current
I
DM
I
S
15
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient (t
≤
5s)
Storage Temperature
0.9
P
D
0.35
357
W
R
θ
JA
T
J
℃
/W
150
℃
Junction Temperature
T
STG
-55 ~+150
1
D
,
Oct
,2014
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
unless otherwise specified
℃
a
Parameter
Symbol
Test condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-body leakage
V
(BR)DSS
V
GS
(
th)
I
GSS
V
GS
= 0V, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=0V, V
GS
=±20V
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
=3.2A
V
GS
=4.5V, I
D
=2.8A
V
DS
=4.5V, I
D
=2.5A
30
1
V
2.2
±100
1
nA
µA
Zero gate voltage drain current
I
DSS
0.049
0.061
0.060
0.075
Drain-source on-state resistance
a
R
DS(on)
g
fs
Ω
Forward transconductance
a
S
2.5
Dynamic
b
V
DS
=15V,V
GS
=10V,I
D
=3.4A
V
DS
=15V,V
GS
=4.5V,I
D
=3.4A
f =1.0MHz
4.5
2.1
0.85
0.65
4.4
235
45
6.7
3.2
Total gate charge
Q
g
nC
Gate-source charge
Gate-drain charge
Gate resistance
Q
gs
Q
gd
R
g
0.8
8.8
Ω
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay Time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DS
=15V,V
GS
=0V,f =1MHz
pF
17
12
20
75
20
35
10
20
15
10
V
DD
=15V,
50
R
L
=5.6
ꢀ
,
I
D
≈
2.7A,
Turn-off delay time
Fall time
t
d(off)
12
V
GEN
=4.5V,Rg=1
ꢀ
t
f
22
ns
Turn-on delay time
Rise time
t
d(on)
5
V
DD
=15V,
t
r
12
R
L
=5.6
ꢀ
,
I
D
≈
2.7A,
GEN
=10V,Rg=1
ꢀ
Turn-off delay time
Fall time
t
d(off)
10
V
t
f
5
Drain-source body diode characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Notes :
1.4
15
I
S
A
A
V
T
C
=25
℃
I
SM
V
SD
1.2
I
S
=-2.7A,V
GS
=0V
0.8
a. Pulse
T
e
st : Pulse width
≤
300µs, duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
2
D
,Oct,2014
Typical Characteristics
Transfer Characteristics
Output Characteristics
5
4
3
2
1
0
20
15
10
5
T
a
=25
℃
V
GS
=10V,9V,8V,7V,6V,5V
T
a
=25
℃
Pulsed
Pulsed
V
GS
=4V
V
GS
=3V
V
GS
=2V
0
0
1
2
3
4
0
2
4
6
8
10
12
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
R
DS(ON)
R
DS(ON)
V
GS
I
D
——
——
500
400
300
200
100
0
150
120
90
60
30
0
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=4.5V
V
GS
=10V
I
D
=2.5A
0
2
4
6
8
10
0
4
8
12
16
20
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN CURRENT
I
D
(A)
I
S
—— V
SD
10
T
a
=25
℃
Pulsed
1
0.1
0.01
1E-3
0
200
400
600
800
1000
1200
SOURCE TO DRAIN VOLTAGE
V
SD
(mV)
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3
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D
,Oct,2014
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Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
c
D
E
E1
e
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
ꢀ
0.300
0°
0.500
8°
0.012
0°
0.020
6°
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ꢀ
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D,Oct,2014
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D,Oct,2014
