Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2307

Part #Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2307
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Jiangsu-Changjing-Electronics-Technology-Co—Ltd–CJ2307
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate MOSFETS  
CJ2307
P-Channel 30-V(D-S) MOSFET  
V

(BR)DSS

R

DS(on)

MAX  
I

D  

SOT-23  
@
Ω
–
10
V
 
88
m
 
V
–
30  
–
2
.
7
A  
1. GATE  
@
138
m
Ω
–
4
.
5
V  
2. SOURCE  
3. DRAIN  
FEATURE  
APPLICATION  
z
TrenchFET Power MOSFET  
Load Switch for Portable Devices  
z
MARKING  
Equivalent Circuit  
Maximum ratings ( T

a

=25
℃
unless otherwise noted)  
.
Symbol  
V

DS  

Value  
Unit  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
-30  
±20  
V
V

GS  

I

D  

Continuous Drain Current

a,b  

Continuous Source-Drain Current

a,b  

Power Dissipation

a,b  

-2.7  
A
I

S  

-0.91  
1.1  
P

D  

R

θ
JA  

T

J  

W
℃
/W  
Thermal Resistance from Junction to Ambient (t
≤
5s
)  
Operating Junction Temperature  
Storage Temperature  
114  
150  
℃
T

stg  

-55 ~+150  
1
E
,
Apr
,201
5  

MOSFET ELECTRICAL
 
CHARACTERISTICS  
T =25  
a
unless otherwise specified  
℃
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
V

(BR)DSS  

V

GS(th)  

I

GSS  

V

GS

= 0V, I

D

=-250µA  
V

DS

=V

GS

, I

D

=-250µA  
V

DS

=0V, V

GS

=±20V  
V

DS

=-30V, V

GS

=0V  
V

DS

=-30V, V

GS

=0V,
T

J

=55
℃  
V

GS

=-4.5V, I

D

=-2.5A  
V

GS

=-10V, I

D

=-3.5A  
V

DS

=-10V, I

D

=-3.5A  
-30  
-1  
V
-3  
±100  
-1  
nA  
µA  
Zero Gate Voltage Drain Current  
Drain-Source On-State Resistance

c  

I

DSS  

-10  
0.110  
0.073  
7
0.138  
0.088  
R

DS(on)  

g

fs  

Ω
Forward Transconductance

c  

Dynamic

d  

S
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
C

iss  

C

oss  

C

rss  

Q

g  

340  
67  
V

DS

=-15V,V
GS
=0V,f =1MHz  
pF  
51  
4.1  
1.3  
1.8  
10  
6.2  
V
DS
=-15V,V
GS
=-4.5V,  
I

D

=-2.5A  
nC  
Q

gs  

Q

gd  

R

g  

f =1MHz  
Ω
Turn-On Delay Time  
Rise Time  
t

d(on)  

t

r  

t

d(off)  

t

f  

40  
60  
60  
40  
30  
V

DD

=-15V,  
40  
R

L

=15
ꢀ
,
I

D

=-1A,  
ns  
V
Turn-Off Delay Time  
Fall Time  
20  
V

GEN

=-4.5V,Rg=1
ꢀ  
17  
Drain-source Body diode characteristics  
-1.2  
Body Diode Voltage  
V

SD  

I

S

=-0.75A, ,V

GS

=0  
-0.8  
Notes:  
a. t=5s.  
b. Surface mounted on 1” ×1” FR4 board.  
c. Pulse
T
e
st : Pulse Width < 300µs, Duty Cycle
≤
2%.  
d. Guaranteed by design, not subject to production testing.  
2
E,Apr,2015  

Typical Characteristics  
Output Characteristics  
Transfer Characteristics  
-20  
-16  
-12  
-8  
-10  
-8  
V

GS

=-10V,-8V,-6V  
T

a

=25
℃
 
T

a

=25
℃  
Pulsed  
Pulsed  
V

GS

=-4.5V  
V

GS

=-4.0V  
V

GS

=-3.5V  
-6  
-4  
V

GS

=-3.0V  
-4  
-2  
-0  
-0  
-0  
-1  
-2  
-3  
-4  
-5  
-0  
-1  
-2  
-3  
-4  
-5  
GATE TO SOURCE VOLTAGE
 
V

GS

(V)  
DRAIN TO SOURCE VOLTAGE
 
V

DS

(V)  
R

DS(ON)

—— I

D  

R

DS(ON)

—— V

GS  

300  
250  
200  
150  
100  
50  
500  
400  
300  
200  
100  
0
T

a

=25
℃  
T

a

=25
℃  
Pulsed  
Pulsed  
V

GS

=-4.5V  
I

D

=-3.5A  
V

GS

=-10V  
-0  
-4  
-8  
-12  
-16  
-20  
-0  
-4  
-8  
-12  
-16  
-20  
DRAIN CURRENT
 
I

D

(A)  
GATE TO SOURCE VOLTAGE
 
V

GS

(V)  
I

S

—— V

SD  

-10  
T

a

=25
℃  
Pulsed  
-1  
-0.1  
-0.01  
-0.0  
-0.3  
-0.6  
-0.9  
-1.2  
-1.5  
SOURCE TO DRAIN VOLTAGE
 
V

SD

(V)  
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E,Apr,2015  

SO
T
-23 Package Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min  
Max  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
A
A1  
A2  
b
c
D
E
E1  
e
e1  
L
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.950 T
Y
P  
0.550 REF  
0.037 T
Y
P  
0.022 REF  
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8
°  
SO
T
-23 Suggested Pad Layout  
4
E,Apr,2015  

SO
T
-23 Tap
e
a
nd Reel  
SOT-23 Tape and reel  
SOT-23 Embossed
 
Carrier Tape  
Packaging Description:  
SOT-23 parts are shipped in tape. The carrier  
tape is made from a dissipative (carbon filled)  
polycarbonate resin. The cover tape is a multilayer  
film (Heat Activated Adhesive in nature) primarily  
composed of polyester film, adhesive layer, sealant,  
and anti-static sprayed agent. These reeled parts in  
standard option are shipped with 3,000 units per 7″  
or 17.8cm diameter reel. The reels are clear in color  
and is made of polystyrene plastic (anti-static  
coated).  
P0  
P1  
C
A
A
A-A  
A
P
Dimensions are in millimeter  
Pkg type  
SOT-23  
A
B
C
d
E
F
P0  
P
P1  
W
3.15  
2.77  
1.22  
Ø1.50  
1.75  
3.50  
4.00  
4.00  
2.00  
8.00  
SOT-23 Tape
 
Leader and Trailer  
Trailer Tape  
Leader Tape  
Components  
100±2 Empty Pockets  
50±2 Empty Pockets  
SOT-23 Reel  
D
W2  
3000  
2500  
1500  
1000  
500  
W1  
Dimensions are in millimeter  
Reel Option  
7”Dia  
D
D1  
D2  
G
H
I
W1  
W2  
Ø178.00  
54.40  
13.00  
R78.00  
R25.60  
R6.50  
9.50  
12.30  
Box Size(mm)  
203×203×195  
Carton Size(mm)  
438×438×220  
G.W.(kg)  
REEL  
Reel Size  
7 inch  
Box  
30,000 pcs  
Carton  
120,000 pcs  
3000 pcs  
5
E,Apr,2015